电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IDT70V7339S166BCI8

产品描述Dual-Port SRAM, 512KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
产品类别存储   
文件大小252KB,共22页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 全文预览

IDT70V7339S166BCI8概述

Dual-Port SRAM, 512KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256

IDT70V7339S166BCI8规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明LBGA, BGA256,16X16,40
针数256
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
Is SamacsysN
最长访问时间12 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)166 MHz
I/O 类型COMMON
JESD-30 代码S-PBGA-B256
JESD-609代码e0
长度17 mm
内存密度9437184 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端口数量2
端子数量256
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA256,16X16,40
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.5 mm
最大待机电流0.04 A
最小待机电流3.15 V
最大压摆率0.83 mA
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn63Pb37)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度17 mm
Base Number Matches1

文档预览

下载PDF文档
HIGH-SPEED 3.3V 512K x 18
SYNCHRONOUS
BANK-SWITCHABLE
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
.eatures:
x
PRELIMINARY
IDT70V7339S
x
x
x
x
x
x
512K x 18 Synchronous Bank-Switchable Dual-ported
SRAM Architecture
64 independent 8K x 18 banks
– 9 megabits of memory on chip
Bank access controlled via bank address pins
High-speed data access
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
– Industrial: 4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 6ns cycle time, 166MHz operation (12Gbps bandwidth)
– Fast 3.6ns clock to data out
– 1.7ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 166MHz
x
x
x
x
x
x
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
LVTTL- compatible, 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 133MHz.
Available in a 144-pin Thin Quad Flatpack (TQFP),
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball
Grid Array (BGA)
Supports JTAG features compliant with IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
144-pin TQFP package.
.unctional Block Diagram
PL/FT
L
OPT
L
CLK
L
ADS
L
CNTEN
L
REPEAT
L
R/W
L
CE
0L
CE
1L
UB
L
LB
L
OE
L
PL/FT
R
OPT
R
CLK
R
ADS
R
CNTEN
R
REPEAT
R
R/W
R
CE
0R
CE
1R
UB
R
LB
R
OE
R
CONTROL
LOGIC
MUX
8Kx18
MEMORY
ARRAY
(BANK 0)
MUX
CONTROL
LOGIC
I/O
0L-17L
I/O
CONTROL
MUX
8Kx18
MEMORY
ARRAY
(BANK 1)
MUX
I/O
CONTROL
I/O
0R-17R
A
12L
A
0L
BA
5L
BA
4L
BA
3L
BA
2L
BA
1L
BA
0L
ADDRESS
DECODE
ADDRESS
DECODE
A
12R
A
0R
BA
5R
BA
4R
BA
3R
BA
2R
BA
1R
BA
0R
BANK
DECODE
MUX
8Kx18
MEMORY
ARRAY
(BANK 63)
BANK
DECODE
NOTE:
1. The Bank-Switchable dual-port uses a true SRAM
core instead of the traditional dual-port SRAM core.
As a result, it has unique operating characteristics.
Please refer to the functional description on page 19
for details.
MUX
,
TDI
TDO
JTAG
TMS
TCK
TRST
5628 drw 01
NOVEMBER 2001
1
DSC 5628/4
©2001 Integrated Device Technology, Inc.

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2515  2038  291  263  2115  55  24  39  46  30 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved