HIGH SPEED 64K (4K X 16 BIT)
IDT70824S/L
SEQUENTIAL ACCESS
RANDOM ACCESS MEMORY (SARAM
™
)
Features
x
x
x
x
x
x
x
x
High-speed access
– Military: 35/45ns (max.)
– Commercial: 20/25/35/45ns (max.)
Low-power operation
– IDT70824S
Active: 775mW (typ.)
Standby: 5mW (typ.)
– IDT70824L
Active: 775mW (typ.)
Standby: 1mW (typ.)
4K x 16 Sequential Access Random Access Memory (SARAM
™
)
– Sequential Access from one port and standard Random
Access from the other port
– Separate upper-byte and lower-byte control of the
Random Access Port
High speed operation
– 20ns t
AA
for random access port
– 20ns t
CD
for sequential port
– 25ns clock cycle time
Architecture based on Dual-Port RAM cells
x
x
x
x
x
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
– Address based flags for buffer control
– Pointer logic supports up to two internal buffers
Battery backup operation - 2V data retention
TTL-compatible, single 5V (+10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Description
The IDT70824 is a high-speed 4K x 16-Bit Sequential Access Random
Access Memory (SARAM). The SARAM offers a single-chip solution to
buffer data sequentially on one port, and be accessed randomly (asyn-
chronously) through the other port. The device has a Dual-Port RAM
based architecture with a standard SRAM interface for the random
(asynchronous) access port, and a clocked interface with counter se-
Functional Block Diagram
A
0-11
CE
OE
R/W
LB
LSB
MSB
UB
CMD
I/O
0-15
12
Random
Access
Port
Controls
Sequential
Access
Port
Controls
4K X 16
Memory
Array
16
12
12
12
12
12
RST
SCLK
CNTEN
SOE
SSTRT
1
SSTRT
2
SCE
SR/W
SLD
SI/O
0-15
,
Data
L
Addr
L
Data
R
Addr
R
16
Reg.
12
16
RST
Pointer/
Counter
Start Address for Buffer #1
End Address for Buffer #1
Start Address for Buffer #2
End Address for Buffer #2
Flow Control Buffer
Flag Status
12
EOB
1
COMPARATOR
EOB
2
3099 drw 01
APRIL 2000
1
©2000 Integrated Device Technology, Inc.
DSC-3099/5
6.07
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory
Military and Commercial Temperature Ranges
quencing for the sequential (synchronous) access port.
Fabricated using CMOS high-performance technology, this memory
device typically operates on less than 775mW of power at maximum high-
speed clock-to-data and Random Access. An automatic power down
feature, controlled by
CE,
permits the on-chip circuitry of each port to enter
a very low standby power mode.
The IDT70824 is packaged in a 80-pin Thin Quad Flatpack (TQFP)
or 84-pin Pin Grid Array (PGA). Military grade product is manufactured
in compliance with the latest revision of MIL-PRF-38535 QML, making it
ideally suited to military temperature applications demanding the highest
level of performance and reliability.
INDEX
SI/O
1
SI/O
0
GND
N/C
SCE
SR/W
RST
SLD
SSTRT
2
SSTRT
1
GND
GND
CNTEN
SOE
SCLK
GND
EOB
2
EOB
1
V
CC
I/O
0
1
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61
60
59
2
58
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
57
56
55
54
53
SI/O
2
SI/O
3
V
CC
SI/O
4
SI/O
5
SI/O
6
SI/O
7
GND
SI/O
8
SI/O
9
SI/O
10
SI/O
11
V
CC
SI/O
12
SI/O
13
SI/O
14
SI/O
15
GND
N/C
GND
IDT70824PF
PN80-1
(4)
80-Pin TQFP
Top View
(5)
52
51
50
49
48
47
46
45
44
43
42
41
20
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Pin Configurations
(1,2,3)
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
V
CC
V
CC
A
1
A
0
CMD
CE
LB
UB
R/W
OE
3099 drw 02
,
63
61
I/O
1
GND
I/O
2
I/O
3
V
CC
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
V
CC
I/O
12
I/O
13
I/O
14
I/O
15
GND
60
58
55
54
51
48
46
45
42
I/O
1
66
V
CC
64
EOB
1
62
GND
CNTEN
GND
SSTRT2
SR/W
59
56
49
50
47
NC
44
GND
43
NC
40
11
10
09
08
07
06
05
04
03
02
01
,
I/O
2
67
NC
65
I/O
0
EOB
2
SOE RST SLD
57
53
52
SSTRT1
SCE
SI/O
0
SI/O
1
SI/O
3
41
39
I/O
3
69
GND
68
SCLK GND
SI/O
2
38
V
CC
37
I/O
4
72
V
CC
71
73
33
SI/O
4
SI/O
5
35
34
I/O
7
75
I/O
6
GND
70
74
IDT70824G
G84-3
(4)
84-Pin PGA
Top View
(5)
SI/O
8
SI/O
7
GND
32
31
36
I/O
9
76
I/O
5
77
I/O
8
78
SI/O
9
SI/O
10
SI/O
6
28
29
30
I/O
10
I/O
11
V
CC
79
80
SI/O
12
V
CC
SI/O
11
26
27
I/O
12
I/O
13
81
83
7
11
12
SI/O
14
SI/O
13
23
25
I/O
14
82
1
NC
2
5
CMD
V
CC
8
10
A
2
14
17
20
NC SI/O
15
22
24
I/O
15
GND
84
3
4
OE
6
LB
9
A
0
A
1
E
V
CC
15
A
4
13
A
7
16
A
10
18
GND GND
19
21
NC
A
Pin 1
Designator
R/W
B
UB
C
CE
D
A
5
F
A
3
G
A
6
H
A
8
J
A
9
K
A
11
L
3099 drw 03
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. PN80-1 package body is approximately 14mm x 14mm x 1.4mm.
G84-3 package body is approximately 1.12 in x 1.12 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
2
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory
Military and Commercial Temperature Ranges
Pin Descriptions: Random Access Port
(1)
SYMBOL
A
0
-A
11
I/O
0
-I/O
15
CE
NAME
Address Lines
Inputs/Outputs
Chip Enable
I/O
I
I
I
DESCRIPTION
Address inputs to access the 4096-word (16-Bit) memory array.
Random access data inputs/outputs for 16-Bit wide data.
When
CE
is LOW, the random access port is enabled. When
CE
is HIGH, the random access port is disabled
into power-down mode and the I/O outputs are in the High-impedance state. All data is retained during
CE
=
V
IH
, unless it is altered by the sequential port
CE
and
CMD
may not be LOW at the same time.
When
CMD
is LOW, address lines A
0
-A
2
, R/W, and inputs and outputs I/O
0
-I/O
12
, are used to access the
control register, the flag register and the start and end of buffer registers.
CMD
and
CE
may not be LOW at the
same time.
If
CE
is LOW and
CMD
is HIGH, data is written into the array when R/W is LOW and read out of the array when
R/W is HIGH. If
CE
is HIGH and
CMD
is LOW, R/W is used to access the buffer command registers.
CE
and
CMD
may not be LOW at the same time.
When
OE
is LOW and R/W is HIGH, I/O
0
-I/O
15
outputs are enabled. When
OE
is HIGH, the I/O outputs are in
the High-impedance state.
When
LB
is LOW, I/O
0
-I/O
7
are accessible for re ad and write operations. When
LB
is HIGH, I/O
0
-I/O
7
are tri-
stated and blocked during read and write operations.
UB
controls access for I/O
8
-I/O
15
in the same manner and
is asynchronous
from
LB.
Seven +5 power supply pins. All V
CC
pins must be connected to the same +5V V
CC
supply.
Ten ground pins. All ground pins must be connected to the same ground supply.
3099 tbl 01
CMD
Control Register Enable
I
R/W
Read/Write Enable
I
OE
LB, UB
Output Enable
Lower Byte, Upper Byte
Enables
I
I
V
CC
GND
Power Supply
Ground
I
I
Pin Descriptions: Sequential Access Port
(1)
SYMBOL
SI/O0-15
SCLK
SCE
NAME
Inputs/Outputs
Clock
Chip Enable
I/O
I/O
I
I
DESCRIPTION
Sequential data inputs/outputs for 16-bit wide data.
SI/O
0
-SI/O
15
,SCE, SR/W, and SLD are registered on the LOW-to-HIGH transition of SCLK. Also, the sequential
access port address pointer increments by 1 on each LOW-TO-HIGH transition of SCLK when
CNTEN
is LOW.
When
SCE
is LOW, the sequential access port is enabled on the LOW-to-HIGH transitio n of SCLK. When
SCE
is HIGH, the sequential access port is disabled into powered-down mode on the LOW-to-HIGH transition of
SCLK, and the SI/O outputs are in the High-impedance state. All data is retained , unless altered by the random
access port.
When
CNTEN
is LOW, the address pointer increments on the LOW-to-HIGH transition of SCLK. This function is
independent of
CE.
When SR/W and
SCE
are LOW, a write cycle is initiated on the LOW-to-HIGH transition of SCLK. When SR/W is
HIGH, and
SCE
and
SOE
are LOW, a read cycle is initiated on the LOW-to-HIGH transition of SCLK. Termination
o f a write cycle is done on the LOW-to -HIGH transition of SCLK if SR/W or
SCE
is HIGH.
When
SLD
is sampled LOW, there is an internal delay of one cycle before the address pointer changes. When
SLD
is LOW, data on the inputs SI/O
0
-SI/O
11
is loaded into a data-in register on the LOW-to-HIGH transition of
SCLK. On the Cycle following
SLD,
the address pointer charges to the address location contained in the data-
in register.
SSTRT
1
and
SSTRT
2
may not be LOW while
SLD
is LOW or during the cycle following
SLD.
When
SSTRT
1
or
SSTRT
2
is LOW, the start of address register #1 or #2 is loaded into the address pointer on
the LOW-to-HIGH transition of SCLK. The start addresses are stored in internal registers.
SSTRT
1
and
SSTRT
2
may not be LOW while
SLD
is LOW or during the cycle following
SLD.
EOB
1
or
EOB
2
is output low when the address pointer is incremented to match the address stored in the end
of buffer registers. The flags can be cleared by either asserting
RST
LOW or by writing ze ro into Bit 0 and/or
Bit 1 of the control registe r at address 101.
EOB
1
and
EOB
2
are dependent on separate internal registers, and
therefore separate match addresses.
SOE
controls the data outputs and is independe nt of SCLK. When
SOE
is LOW, output buffers and the
se quentially ad dressed data is output. When
SOE
is HIGH, the SI/O output bus is in the High-impedance state.
SOE
is asynchronous to SCLK.
When
RST
is LOW, all internal registers are set to their default state, the address pointer is set to zero and the
EOB
1
and
EOB
2
flags are set HIGH.
RST
is asynchronous to SCLK.
3099 tbl 02
CNTEN
SR/W
Counter Enable
Read/Write Enable
I
I
SLD
Address Pointer Load Control
I
SSTRT
1
,
SSTRT
2
EOB
1
,
EOB
2
Load Start of Address
Register
End of Buffer Flag
I
O
SOE
Output Enable
I
RST
Reset
I
NOTE:
1. "I/O" is bidirectional Input and Output. "I" is Input and "O" is Output.
6.42
3
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory
Military and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
Recommended Operating
Temperature and Supply Voltage
Grade
Ambient Temperature
Military
-55
O
C to +125
O
C
0
O
C to +70
O
C
-40
O
C to +85
O
C
0V
0V
0V
5.0V
+
10%
5.0V
+
10%
5.0V
+
10%
3099 tbl 04
GND
Vcc
T
BIAS
T
STG
I
OUT
-55 to +125
-55 to +125
50
-65 to +135
-65 to +150
50
o
C
C
Commercial
Industrial
o
mA
3099 tbl 03
NOTES:
1. This is the parameter T
A
.
2. Industrial temperature: for specific speeds, packages and powers contact
your sales office.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM >
Vcc + 10%.
Recommended DC Operating
Conditions
Symbol
V
CC
GND
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
3099 tbl 05
Capacitance
Symbol
C
IN
C
OUT
V
IH
V
IL
(T
A
= +25°C, f = 1.0mhz, TQFP only)
Parameter
Input Capacitance
Output Capacitance
Conditions
(2)
____
Max.
9
10
Unit
pF
pF
3099 tbl 06
V
IN
= 3dV
V
OUT
= 3dV
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization, but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 5.0V ± 10%)
70824S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
V
OUT
= 0V to V
CC
I
OL
= +4mA
I
OH
= -4mA
Min.
___
___
___
70824L
Max.
5
5
0.4
___
Min.
___
___
___
Max.
1
1
0.4
___
Unit
µA
µA
V
V
3099 tbl 07
2.4
2.4
4
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory
Military and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,2,8)
(V
CC
= 5.0V ± 10%)
70824X20
Com'l Only
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Test Condition
CE
L
and
CE
R
= V
IL
,
Outputs Open
SCE
= V
IL
(5)
f = f
MAX
(3)
SCE
and
CE
= V
IH
(7)
CMD
= V
IH
f = f
MAX
(3)
Version
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
Typ.
(2)
180
180
____
____
70824X25
Com'l Only
Typ.
(2)
170
170
____
____
70824X35
Com'l &
Military
Typ.
(2)
160
160
160
160
20
20
20
20
95
95
95
95
1.0
0.2
1.0
0.2
90
90
90
90
Max.
340
290
400
340
70
50
85
65
240
210
290
250
15
5
30
10
220
180
260
215
70824X45
Com'l &
Military
Typ.
(2)
155
155
155
155
16
16
16
16
90
90
90
90
1.0
0.2
1.0
0.2
85
85
85
85
Max.
340
290
400
340
70
50
85
65
240
210
290
250
15
5
30
10
220
180
260
215
3099 tbl 08
Max.
380
330
____
____
Max.
360
310
____
____
Unit
mA
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
25
25
____
____
70
50
____
____
25
25
____
____
70
50
____
____
mA
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
or
SCE
= V
IH
Active Port Outputs Open,
f=f
MAX
(3)
115
115
____
____
260
230
____
____
105
105
____
____
250
220
____
____
mA
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports
CE
and
SCE
> V
CC
- 0.2V
(6)
V
IN
> V
CC
- 0.2V or
V
IN
< 0.
2V,
f = 0
(4)
One Port
CE
or
SCE
> V
CC
- 0.2V
(6,7)
Outputs Open (Active Port)
f = f
MAX
(3)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
1.0
0.2
____
____
15
5
____
____
1.0
0.2
____
____
15
5
____
____
mA
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
110
110
____
____
240
200
____
____
100
100
____
____
230
190
____
____
mA
NOTES
1. 'X' in part number indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25°C; guaranteed by device characterization but not production tested.
3. At f = f
MAX
, address, control lines (except Output Enable), and SCLK are cycling at the maximum frequency read cycle of 1/t
RC
.
4. f = 0 means no address or control lines change.
5.
SCE
may transition, but is Low (SCE=V
IL
) when clocked in by SCLK.
6.
SCE
may be - 0.2V, after it is clocked in, since SCLK=V
IH
must be clocked in prior to powerdown.
7. If one port is enabled (either
CE
or
SCE
= LOW) then the other port is disabled (SCE or
CE
= HIGH, respectively). CMOS HIGH > Vcc - 0.2V and LOW < 0.2V, and
TTL HIGH = V
IH
and LOW = V
IL
.
8. Industrial temperature: for specific speeds, packages and powers contact your sales office.
Data Retention Characteristics Over All Temperature Ranges
(L Version Only)
(V
LC
< 0.2V, V
HC
> V
CC
- 0.2V)
Symbol
V
DR
I
CCDR
Parameter
V
CC
for Data Retention
Data Retention Current
V
CC
= 2V
CE
= V
HC
V
IN
= V
HC
or = V
LC
t
CDR
(3)
t
R
(
3)
Chip Deselect to Data Retention Time
Operation Recovery Time
MIL. & IND.
COM'L.
Test Condition
Min.
2.0
___
Typ.
(1)
___
Max.
___
Unit
V
µA
100
100
___
4000
1500
___
___
SCE
= V
HC
(4)
when SCLK = u
CMD
> V
HC
___
V
V
3099 tbl 09
t
RC
(2)
___
___
NOTES :
1. T
A
= +25°C, V
CC
= 2V; guaranteed by device characterization but not production tested.
2. t
RC
= Read Cycle Time
3. This parameter is guaranteed by device characterization, but is not production tested.
4. To initiate data retention,
SCE
= V
IH
must be clocked in.
6.42
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
