1. FEATURES ............................................................................................................................................................. 4
2. GENERAL DESCRIPTION .................................................................................................................................... 6
Table 1. Additional Features at each 128Mb Flash memory .....................................................................6
8. DATA PROTECTION..............................................................................................................................................11
Table 3. Protected Area Sizes at each 128Mb Flash memory ................................................................12
Table 4. 4K-bit Secured OTP Definition at Each 128Mb Flash memory
9. HOLD FEATURE................................................................................................................................................... 13
9-1. Figure 2. Hold Condition Operation ....................................................................................................... 13
10-19.Page Program (PP) ............................................................................................................................... 38
10-20.4 x I/O Page Program (4PP) ................................................................................................................. 39
10-21.Continuously program mode (CP mode) ............................................................................................... 42
11. POWER-ON STATE ............................................................................................................................................ 68
15. ERASE AND PROGRAMMING PERFORMANCE ............................................................................................. 80
16. DATA RETENTION ............................................................................................................................................. 80
18. ORDERING INFORMATION ............................................................................................................................... 81
19. PART NAME DESCRIPTION .............................................................................................................................. 82
20. PACKAGE INFORMATION ................................................................................................................................. 83
21. REVISION HISTORY .......................................................................................................................................... 84
P/N: PM1737
REV. 1.0, NOV. 29, 2011
3
MX25L25835E
256M-BIT [x 1/x 2/x 4] CMOS MXSMIO
TM
(SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
GENERAL
Stacked By Two 128Mb Flash Memories With 2 CS#
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (two I/O mode) structure or 33,554,432 x 4 bits (four I/O
mode) structure per 128Mb Flash memory
• 4096 Equal Sectors with 4K bytes each (per 128Mb Flash memory)
- Any Sector can be erased individually
• 512 Equal Blocks with 32K bytes each (per 128Mb Flash memory)
- Any Block can be erased individually
• 256 Equal Blocks with 64K bytes each (per 128Mb Flash memory)
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 70MHz with 4 dummy cycles for 2READ instruction; 70MHz with 8 dummy cycles for DREAD
instruction
- 4 I/O: 70MHz with 6 dummy cycles for 4READ instruction; 70MHz with 8 dummy cycles for QREAD
instruction
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 12us (typical)
- 8/16/32/64 byte Wrap-Around Burst Read Mode
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 80s(typ.) /
chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 200uA (max.)
- Deep power down current: 80uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM1737
REV. 1.0, NOV. 29, 2011
4
MX25L25835E
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features Independently at each 128Mb Flash memory
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
- Additional 4K bits secured OTP for unique identifier
• Auto Erase and Auto Program Algorithms
program pulse width (Any page to be programed should have page in the erased state first.)
•
Status Register Feature Independently at each 128Mb Flash memory
•
Electronic Identification
-
JEDEC 1-byte Manufacturer ID and 2-byte Device ID
- RES command for 1-byte Device ID
- REMS, REMS2 and REMS4 commands for 1-byte Manufacturer ID and 1-byte Device ID
-
Automatically erases and verifies data at selected sector
-
Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
HARDWARE FEATURES
•
CS#1 & CS#2
- Both CS#1 and CS#2 are Chip Select inputs. CS#1 and CS#2 can select different 128Mb Flash memories
•
SCLK Input
-
Serial clock input
• SI/SIO0
-
Serial Data Input or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• SO/SIO1
-
Serial Data Output or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• WP#/SIO2
-
Hardware write protection or serial data Input/Output for 4 x I/O mode
• HOLD#/SIO3
-
To pause the device without deselecting the device or serial data Input or serial data Input/Output for 4 x I/O
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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