电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RS1GL M2G

产品描述DIODE GEN PURP 400V 800MA SUBSMA
产品类别半导体    分立半导体   
文件大小357KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

RS1GL M2G概述

DIODE GEN PURP 400V 800MA SUBSMA

RS1GL M2G规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)400V
电流 - 平均整流(Io)800mA
不同 If 时的电压 - 正向(Vf1.3V @ 800mA
速度快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)150ns
不同 Vr 时的电流 - 反向漏电流5µA @ 400V
不同 Vr,F 时的电容10pF @ 4V,1MHz
安装类型表面贴装
封装/外壳DO-219AB
供应商器件封装Sub SMA
工作温度 - 结-55°C ~ 150°C

文档预览

下载PDF文档
RS1AL - RS1ML
Taiwan Semiconductor
CREAT BY ART
0.8A, 50V - 1000V Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.8 A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJL
R
θJA
T
J
T
STG
150
32
105
- 55 to +150
- 55 to +150
SYMBOL
RS1
AL
RAL
50
35
50
RS1
BL
RBL
100
70
100
RS1
DL
RDL
200
140
200
RS1
GL
RGL
400
280
400
0.8
30
1.3
5
50
10
250
500
RS1
JL
RJL
600
420
600
RS1
KL
RKL
800
560
800
RS1
ML
RML
1000
700
1000
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
UNIT
Document Number: DS_D1409037
Version: M15

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 588  2312  1176  1125  471  12  47  24  23  10 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved