PESD3V3V1BL
31 May 2017
Low capacitance bidirectional ESD protection diode
Product data sheet
1. General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect
one signal line from the damage caused by ESD and other transients. The device is housed in a
leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Low clamping voltage: V
CL
= 9.8 V @ 16 A TLP
Ultra low leakage current: I
RM
< 1 nA
ESD protection up to 30 kV
Reverse standoff voltage V
RWM
= 3.3 V
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PPM
= 5 A
IEC 61000-4-5 (surge); I
PPM
= 6.14 A (average measured)
AEC-Q101 qualified
3. Applications
ESD and surge protection for:
•
•
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RWM
C
d
Parameter
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
11
Max
3.3
13
Unit
V
pF
Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K1
K2
cathode (diode 1)
cathode (diode 2)
1
2
Simplified outline
Graphic symbol
1
sym045
2
Transparent
top view
DFN1006-2 (SOD882)
6. Ordering information
Table 3. Ordering information
Type number
PESD3V3V1BL
Package
Name
DFN1006-2
Description
Version
plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; SOD882
1 mm x 0.6 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
PESD3V3V1BL
Marking code
X1
PESD3V3V1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
31 May 2017
2 / 13
Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
[1]
[2]
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
Conditions
t
p
= 8/20 µs
[1]
Min
-
-
-55
-65
Max
5
150
150
150
30
Unit
A
°C
°C
°C
kV
ESD maximum ratings
IEC 61000-4-2; contact discharge
[2]
-
According to IEC 61000-4-5.
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
40
t
p
(µs)
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD3V3V1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
31 May 2017
3 / 13
Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
V
RWM
V
BR
I
RM
C
d
V
CL
R
dyn
[1]
[2]
Parameter
reverse standoff
voltage
breakdown voltage
reverse leakage
current
diode capacitance
clamping voltage
dynamic resistance
Conditions
T
amb
= 25 °C
I
R
= 5 mA; T
amb
= 25 °C
V
RWM
= 3.3 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PP
= 5 A; t
p
= 8/20 μs; T
amb
= 25 °C
I
R
= 10 A; T
amb
= 25 °C
[1]
[2]
Min
-
4.5
-
-
-
-
Typ
-
-
1
11
8.5
0.2
Max
3.3
-
10
13
10
-
Unit
V
V
nA
pF
V
Ω
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
12
C
d
(pF)
10
10
006aab607
I
RM
10
3
006aab608
I
RM(25°C)
10
2
1
8
10
- 1
6
0
1
2
3
4
V
R
(V)
5
10
- 2
- 100
- 50
0
50
100
T
j
(°C)
150
f = 1 MHz; T
amb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 4.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESD3V3V1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
31 May 2017
4 / 13
Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
I
PP
- V
CL
- V
BR
- V
RWM
I
R
I
RM
- I
RM
- I
R
V
RWM
V
BR
V
CL
-
+
- I
PP
006aaa676
Fig. 5.
V-I characteristics for a bidirectional ESD protection diode
PESD3V3V1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
31 May 2017
5 / 13
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
