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1N4002TA

产品描述DIODE GEN PURP 100V 1A DO41
产品类别半导体    分立半导体   
文件大小308KB,共4页
制造商SMC
官网地址http://www.smc-diodes.com/
标准
下载文档 详细参数 选型对比 全文预览

1N4002TA概述

DIODE GEN PURP 100V 1A DO41

1N4002TA规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)100V
电流 - 平均整流(Io)1A
不同 If 时的电压 - 正向(Vf1V @ 1A
速度标准恢复 >500ns,> 200mA(Io)
不同 Vr 时的电流 - 反向漏电流5µA @ 100V
不同 Vr,F 时的电容15pF @ 4V,1MHz
安装类型通孔
封装/外壳DO-204AL,DO-41,轴向
供应商器件封装DO-41
工作温度 - 结-65°C ~ 125°C

文档预览

下载PDF文档
1N4001-1N4007
Technical Data
Data Sheet N0543, Rev. A
1N4001 THRU 1N4007
1.0 SILICON RECTIFIER
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DO-41
Circuit Diagram
Mechanical Data
Case: molded plastic
Terminals: Plated leads, solderable per MIL-STD-
202, Method 208
Polarity: Cathode band
Mounting Position: Any
Weight:0.34 grams(approx)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%
.
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward rectified output current
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I
F
=1.0A
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to
Ambient (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
RMS
I
O
I
FSM
V
FM
I
RM
C
J
R
θJA
T
J
T
STG
1N
4001
50
35
1N
4002
5
100
3
70
1N
4003
1
200
7
140
1N
4004
2
400
1
280
1.0
30
1.0
5.0
50
15
50
-65 to +125
-65 to +150
1N
4005
4
600
2
420
1N
4006
6
800
4
560
1N
4007
8
1000
5
700
Units
1
V
1
V
A
A
V
µA
pF
°C/W
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

1N4002TA相似产品对比

1N4002TA 1N4007TA 1N4003TA 1N4004TA 1N4001TA 1N4005TA 1N4006TA
描述 DIODE GEN PURP 100V 1A DO41 DIODE GEN PURP 1KV 1A DO41 DIODE GEN PURP 200V 1A DO41 DIODE GEN PURP 400V 1A DO41 DIODE GEN PURP 50V 1A DO41 DIODE GEN PURP 600V 1A DO41 DIODE GEN PURP 800V 1A DO41
二极管类型 标准 标准 标准 标准 标准 标准 标准
电压 - DC 反向(Vr)(最大值) 100V 1000V 200V 400V 50V 600V 800V
电流 - 平均整流(Io) 1A 1A 1A 1A 1A 1A 1A
不同 If 时的电压 - 正向(Vf 1V @ 1A 1V @ 1A 1V @ 1A 1V @ 1A 1V @ 1A 1V @ 1A 1V @ 1A
速度 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io)
不同 Vr 时的电流 - 反向漏电流 5µA @ 100V 5µA @ 1000V 5µA @ 200V 5µA @ 400V 5µA @ 50V 5µA @ 600V 5µA @ 800V
不同 Vr,F 时的电容 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz
安装类型 通孔 通孔 通孔 通孔 通孔 通孔 通孔
封装/外壳 DO-204AL,DO-41,轴向 DO-204AL,DO-41,轴向 DO-204AL,DO-41,轴向 DO-204AL,DO-41,轴向 DO-204AL,DO-41,轴向 DO-204AL,DO-41,轴向 DO-204AL,DO-41,轴向
供应商器件封装 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
工作温度 - 结 -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

 
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