GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED
®
diode with ultrasoft reverse
recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
MTP
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
PRODUCT SUMMARY
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 100 °C
t
sc
at T
J
= 150 °C
1200 V
2.51 V
15 A
> 10 μs
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
(including diode and IGBT)
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
MAX.
1200
30
15
60
A
60
15
30
± 20
V
2500
187
W
75
UNITS
V
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of V
(BR)CES
SYMBOL
V
(BR)CES
V
(BR)CES
/T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 15 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 15 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 30 A, T
J
= 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
Collector to emitter leaking current
V
GE(th)
V
GE(th)
/T
J
g
fe
I
CES
I
C
= 250 μA
V
CE
= V
GE
, I
C
= 1 mA
V
CE
= 25 V, I
C
= 15 A
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
I
F
= 15 A, V
GE
= 0 V
Diode forward voltage drop
V
FM
I
F
= 30 A, V
GE
= 0 V
I
F
= 15 A, V
GE
= 0 V, T
J
= 125 °C
I
F
= 30 A, V
GE
= 0 V, T
J
= 125 °C
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
MIN.
1200
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
TYP.
-
1.11
2.51
3.36
2.94
4.12
-
- 10
12
-
-
2.13
2.70
2.27
3.06
-
MAX.
-
-
2.70
3.66
3.16
4.46
6
-
-
250
1000
2.58
3.33
2.75
3.76
± 250
nA
V
mV/°C
S
μA
V
UNITS
V
V/°C
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse BIAS safe operating area
Short circuit safe operating area
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery energy
Diode reverse recovery time
Diode peak reverse current
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
RBSOA
SCSOA
C
ies
C
oes
C
res
E
rec
t
rr
I
rr
T
J
= 150 °C, I
C
= 60 A
R
g
= 10
,
V
GE
= 15 V to 0
V
CC
= 600 V, V
GE
= + 15 V to 0
T
J
= 150 °C, V
P
= 1200 V, R
g
= 10
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
I
C
= 15 A, V
CC
= 600 V, V
GE
= 15 V
L = 500 μH, L
S
= 100 nH
R
g
= 10
,
T
J
= 125 °C
10
-
-
-
-
-
-
I
C
= 15 A, V
CC
= 600 V, V
GE
= 15 V
L = 500 μH, L
S
= 100 nH
R
g
= 10
,
T
J
= 125 °C
TEST CONDITIONS
I
C
= 15 A
V
CC
= 600 V
V
GE
= 15 V
I
C
= 15 A, V
CC
= 600 V, V
GE
= 15 V
R
g
= 10
,
L = 500 μH, T
J
= 25 °C
Energy losses include tail and
diode reverse recovery
I
C
= 15 A, V
CC
= 600 V, V
GE
= 15 V
R
g
= 10
,
L = 500 μH, T
J
= 125 °C
Energy losses include tail and
diode reverse recovery
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
98
12
46
0.990
0.827
1.817
1.352
1.138
2.490
95
18
134
227
Fullsquare
-
1302
717
38
819
96
35
-
1953
1076
57
-
-
-
μJ
ns
A
pF
μs
MAX.
146
17
69
1.485
1.241
2.726
2.028
1.707
3.735
143
27
200
341
ns
mJ
mJ
nC
UNITS
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93913
Revision: 03-Aug-10
GB15XP120KTPbF
Three Phase Inverter Module in MTP Package
Vishay Semiconductors
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
THERMISTOR SPECIFICATIONS (T CODE ONLY)
PARAMETER
Resistance
Sensitivity index of the
thermistor material
Notes
(1)
T , T are thermistor´s temperatures
0
1
R
0
1
1
(2)
------
=
exp
-----
–
-----
-
-
-
T
R
T
1
0
1
SYMBOL
R
0 (1)
(1)(2)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
TEST CONDITIONS
MIN.
-
-
TYP.
30
4000
MAX.
-
-
UNITS
k
K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction
temperature range
Storage temperature range
IGBT
Junction to case
Diode
Module
Case to sink per module
Mounting torque
Weight
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
R
thJC
SYMBOL
T
J
T
Stg
TEST CONDITIONS
MIN.
- 40
- 40
-
-
-
-
-
-
TYP.
-
-
-
-
0.50
0.1
-
65
MAX.
150
125
1.1
1.7
-
-
4
-
Nm
g
°C/W
UNITS
°C
60
60
40
Ice (A)
20
Ice (A)
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
40
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
20
0
0
2
Vce (V)
4
6
0
0
2
Vce (V)
4
6
Fig. 1 - Typical Output Characteristics
T
J
= 25 °C
Fig. 2 - Typical Output Characteristics
T
J
= 125 °C
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
20
1000
t
F
Swiching Time (ns)
15
I
ce=7.5A
I
ce=15A
I
ce=30A
td
OFF
100
td
ON
Vce (V)
10
10
5
t
R
0
5
10
Vge (V)
15
20
1
5
10
15
Ic (A)
20
25
30
Fig. 3 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 6 - Typical Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CE
= 600 V
R
g
= 10
;
V
GE
= 15 V
4
20
15
I
ce=7.5A
I
ce=15A
I
ce=30A
Energy (mJ)
E
TOT
3
E
ON
2
Vce (V)
10
E
OFF
5
1
0
5
10
Vge (V)
15
20
0
0
10
20
30
Rg ( )
40
50
Fig. 4 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 7 - Typical Energy Loss vs. R
g
T
J
= 125 °C, L = 500 μH, V
CE
= 600 V
I
C
= 15 A; V
GE
= 15 V
1000
4500
E
TOT
Swiching Time (ns)
3500
Energy (mJ)
t
F
td
OFF
100
td
ON
2500
E
OFF
1500
E
ON
t
R
500
5
15
Ic (A)
25
35
10
0
10
20
30
Rg ( )
40
50
Fig. 5 - Typical Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CE
= 600 V
R
g
= 10
;
V
GE
= 15 V
Fig. 8 - Typical Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CE
= 600 V
I
C
= 15 A; V
GE
= 15 V
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93913
Revision: 03-Aug-10
GB15XP120KTPbF
Three Phase Inverter Module in MTP Package
Vishay Semiconductors
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
10000
120
1000
Capacitance (pF)
Cies
90
Ptot (W)
Coes
60
100
30
Cres
10
0
10
20
Vce (V)
30
40
0
0
40
80
Tc (°C)
120
160
Fig. 9 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
16
600V
12
Fig. 12 - Power Dissipation vs. Case Temperature
(IGBT only)
100
10
20 µs
100 µs
V
GE
(V)
8
Ic (A)
1
1 ms
4
0.1
10 ms
DC
0
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
100
0.01
1
10
100
Vce (V)
1000
10000
Fig. 10 - Typical Gate Charge vs. V
GE
I
CE
= 15 A
32
100
Fig. 13 - Forward SOA
T
C
= 25 °C, T
J
150 °C
24
Ic (A)
16
8
Ic (A)
10
0
0
40
80
Tc (°C)
120
160
1
10
100
Vce (V)
1000
10000
Fig. 11 - Maximum DC Collector Current vs.
Case Temperature
Fig. 14 - Reverse BIAS SOA
T
J
= 150 °C, V
GE
= 15 V
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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