VS-VSKU162...PbF, VS-VSKV162...PbF Series
www.vishay.com
Vishay Semiconductors
Thyristor/Thyristor, 160 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
INT-A-PAK
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
160 A
PRIMARY CHARACTERISTICS
I
T(AV)
Type
Package
Modules - thyristor, standard
INT-A-PAK
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
RRM
T
J
Range
Range
50 Hz
60 Hz
50 Hz
60 Hz
85 °C
CHARACTERISTICS
VALUES
160
355
4870
5100
119
108
1190
1200, 1600
-40 to +125
kA
2
s
kA
2
s
V
°C
A
UNITS
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-VSK.162
VOLTAGE
CODE
12
16
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1200
1600
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
1700
I
RRM
/I
DRM
AT 125 °C
mA
50
Revision: 27-Jul-2018
Document Number: 95901
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKU162...PbF, VS-VSKV162...PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
VALUES
160
85
355
4870
5100
4100
4300
119
108
84
76.7
1190
0.8
0.98
1.67
m
r
t2
V
TM
V
FM
I
H
I
L
(I >
x I
T(AV)
), T
J
maximum
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
1.38
1.54
1.54
200
400
mA
V
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
gd
t
gr
t
q
T
J
= 25 °C
TEST CONDITIONS
Gate current = 1 A, dl
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
VALUES
1
2
50 to 200
μs
UNITS
I
TM
= 300 A, - dl/dt = 15 A/μs; T
J
= T
J
maximum
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
INS
dV/dt
T
J
= 125 °C
50 Hz, circuit to base,
all terminals shorted, t = 1 s
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
50
3500
1000
UNITS
mA
V
V/μs
Revision: 27-Jul-2018
Document Number: 95901
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKU162...PbF, VS-VSKV162...PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
t
p
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
I
GT
T
J
= 25 °C
T
J
= T
J
maximum
Anode supply = 6 V,
resistive load; R
a
= 1
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
T
J
= T
J
maximum, rated V
DRM
applied
I
GD
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
10
300
mA
A/μs
V
mA
V
UNITS
W
A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
V
GD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heat sink per module
Mounting
torque ± 10 %
Approximate weight
Case style
IAP to heat sink
busbar to IAP
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
-40 to +125
°C
-40 to +150
0.16
K/W
0.05
4 to 6
200
7.1
INT-A-PAK
Nm
g
oz.
UNITS
R
CONDUCTION PER JUNCTION
DEVICES
180°
VS-VSK.162
0.0030
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.0031
90°
0.0032
60°
0.0033
30°
0.0034
180°
0.0029
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.0036
90°
0.0039
60°
0.0041
30°
0.0040
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jul-2018
Document Number: 95901
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKU162...PbF, VS-VSKV162...PbF Series
www.vishay.com
Vishay Semiconductors
40 0
M a xim um A vera g e O n -sta te Pow e r Lo ss (W )
130
M a xim um A llow ab le C a se Tem p era ture (°C)
R
thJ C
(D C ) = 0.16 K/W
120
110
C o nd uc tio n Angle
35 0
30 0
25 0
20 0
15 0
10 0
50
0
0
30
DC
180
120
90
60
30
RM S Lim it
100
90
80
70
0
30
60
90
1 20
150
180
Averag e Fo rw ard C urrent (A)
30
60
90
120
180
C o n du c tio n Pe rio d
Per Junctio n
T
J
= 125°C
60
9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0
Averag e O n -sta te C urren t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
1 30
M axim um Allow a b le C ase Tem perature (°C)
1 20
1 10
1 00
90
80
70
60
0
50
100
15 0
20 0
2 50
300
A vera ge O n -sta te C urrent (A)
30
60
90
120
180
DC
C on d uctio n P e rio d
Pea k H alf Sin e W a ve O n-state C urren t (A )
R
thJC
(DC ) = 0.16 K/W
4 50 0
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
A t A ny R ate d Lo ad C on dition A n d W ith
Rate d V
RRM
A pplie d Fo llow ing Surg e.
In itial T
J
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Per Jun ction
1 50 0
1
10
10 0
Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
4 00
M axim um Averag e O n-state Pow er Loss (W )
3 50
3 00
2 50
2 00
1 50
1 00
50
C o nd uc tio n Angle
50 0 0
Per Junction
T = 125°C
J
180
120
90
60
30
Peak Ha lf Sine W av e O n -sta te C urrent (A)
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
M axim um Non Repetitive Surge Current
Ve rsus Pulse Train D uratio n. Co ntro l
O f Co nductio n Ma y No t Be M aintained .
In itia l T
J
= 125°C
No V olta ge Re ap plied
Ra te d V
R R M
Re ap plie d
RM S Lim it
0
0
20
40
60
8 0 10 0 1 20 1 40 1 6 0 1 8 0
Averag e O n-state C urren t (A)
Per Junction
15 0 0
0.0 1
0 .1
1
Pu lse Tra in D uration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 95901
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKU162...PbF, VS-VSKV162...PbF Series
www.vishay.com
Vishay Semiconductors
600
M a xim um T ota l O n-state Pow e r Loss (W )
R
t
0.
04
0.
A
hS
500
400
300
C o nductio n A n gle
180
120
90
60
30
06
08
0.
K/
W
K/
W
W
K/
=
0. 0
2
K/
0.1
W
K/
W
-
Δ
R
0 .1
6K
/W
200
0.2
K/ W
100
0
0
100
200
P e r M o d ule
T
J
= 12 5°C
300
400
0
25
50
75
100
125
Tota l RM S O utp ut C urre nt (A)
M axim um A llowab le Am b ie nt Tem p era ture (°C)
Fig. 7 - On-State Power Loss Characteristics
9 00
M axim um Total P ower Lo ss (W )
8 00
7 00
6 00
5 00
4 00
3 00
2 00
1 00
0
0
50
100
15 0
20 0
25 0
0
3 00
25
50
75
10 0
12 5
Tota l O utput C urrent (A)
M axim um A llo wa ble A m b ient Tem perature (°C)
Single Phase Brid ge
C onnected
T
J
= 125°C
180
(Sine )
180
(Re ct)
0.
0.
08
R
t
K/
A
hS
W
=
12
0.
K/
04
W
K/
W
0.2
-
K/
Δ
R
W
0.3
0.4
K/ W
K/ W
0 .6 K
/W
1 K/ W
Fig. 8 - On-State Power Loss Characteristics
1 5 00
SA
R
th
0.
M axim u m To tal Po wer Loss (W )
04
1 2 50
1 0 00
7 50
5 00
2 50
0
0
50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 40
50
Tota l Output C urrent (A)
Three Phase Brid ge
C onnected
T
J
= 12 5°C
120
(Rect)
0.
08
K/
W
=
0. 0
2
K/
K/
W
W
-
0 .1
0 .2
Δ
R
2 K
/W
K/ W
0.3
K/ W
0 .6 K / W
25
50
75
100
125
M a xim um Allo w a b le A m b ie n t Te m p era tu re (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 95901
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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