TN3019A
TN3019A
C
TO-226
B
E
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 500 mA and
collector voltages up to 80 V. Sourced from Process 12.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80
140
7.0
1.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN3019A
1.0
8.0
125
50
Units
W
mW/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
TN3019A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 30 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 90 V, I
E
= 0
V
CB
= 90 V, I
E
= 0, T
A
= 150°C
V
EB
= 5.0 V, I
C
= 0
80
140
7.0
0.01
10
0.01
V
V
V
µA
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
=150 mA,V
CE
=10 V,T
A
=-55°C
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 1.0 A, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 10 mA, I
B
= 15 mA
50
90
100
40
50
15
300
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.2
0.5
1.1
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
h
fe
rb’C
c
NF
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Noise Figure
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
E
= 10 mA, V
CB
= 10 V,
f = 4.0 MHz
I
C
= 100 mA, V
CE
= 10 V,
R
S
= 1.0 kΩ, f = 1.0 kHz
80
100
12
60
400
400
4.0
pS
dB
MHz
pF
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
TN3019A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EM ITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
350
300
250
200
150
100
50
0
0.1
0.3
1
3
10
30
100 300
I
C
- COLLECTOR CURRENT (mA)
1000
- 40 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
1
0.8
0.6
25 °C
β
= 10
V
CE
= 1V
25 °C
0.4
- 40
°
C
0.2
125
°
C
0
0.1
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
β
= 10
0.8
- 40
°
C
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
V
CE
= 1V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
- 40
°
C
25 °C
125
°
C
25 °C
125
°
C
0.4
0
0.1
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
10
V
CB
= 80V
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
100
f = 1.0 MHz
CAPACITANCE (pF)
80
60
40
Ceb
1
20
C cb
0.1
25
50
75
100
T
A
- AMBIENT TEMPERATURE (
°
C)
125
0
0.1
1
10
REVERSE BIAS VOLTAGE (V)
50
TN3019A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Small Signal Current Gain at 20 MHz
h
FE
- SMALL SIGNAL CURRENT GAIN
10
f = 20 MHz
8
V
CE
= 10V
TIME (ns)
6
4
2
0
V
CE
= 1.0V
800
600
400
200
1000
Switching Times vs
Collector Current
tr
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
0
10
tf
ts
td
1000
100
500
I
C
- COLLECTOR CURRENT (mA)
Turn On and Turn Off Times vs
Collector Current
1000
P
D
- POWER DISSIPATION (W)
1
Power Dissipation vs
Ambient Temperature
TO-226
0.75
800
TIME (ns)
600
400
200
t on
0
10
I
C
I
B1
= I
B2
= I
C
V
CC
= 50V
10
0.5
t off
1000
0.25
100
500
- COLLECTOR CURRENT (mA)
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
TN3019A
NPN General Purpose Amplifier
(continued)
Test Circuit
- 4.0 V
50 V
I
C
150 mA
200 mA
500 mA
R
b
314
Ω
157
Ω
94
Ω
R
L
330
Ω
167
Ω
100
Ω
- 1
µ
F
1.0 KΩ
Ω
R
L
R
b
To Sampling Scope
Rise Time
≤
5.0 ns
Input Z
≈
100 kΩ
50
Ω
1.5
µ
S
10 V
0V
Pulse Source
Rise Time
≤
5.0 ns
Fall Time
≤
10 ns
FIGURE 1:
t
ON
, t
OFF
Test Circuit
测试/测量
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