TN3440A
TN3440A
C
TO-226
B
E
NPN General Purpose Amplifier
This device is designed for use in horizontal driver, class A off-line amplifier
and off-line switching applications. Sourced from Process 36.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
250
300
7.0
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN3440A
1.0
8.0
125
50
Units
W
mW/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
TN3440A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
CEO(
sus
)
V
(BR)CBO
I
CEO
I
CEX
I
CBO
I
EBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 50 mA, I
B
= 0
I
C
= 100
µ
A, I
E
= 0
V
CE
= 200 V, I
B
= 0
V
CE
= 300 V, V
BE
= 1.5 V
V
CB
= 250 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
250
300
50
500
20
20
V
V
µ
A
µ
A
µA
µ
A
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
sat
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 2.0 mA, V
CE
= 10 V
I
C
= 20 mA, V
CE
= 10 V
I
C
= 50 mA, I
B
= 4.0 mA
I
C
= 50 mA, I
B
= 4.0 mA
30
40
160
0.5
1.3
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
h
fe
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
I
C
= 10 mA, V
CE
= 10 V,
f = 5.0 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
BE
= 5.0 V, I
C
= 0, f = 1.0 MHz
I
C
= 5.0 mA, V
CE
= 10 V,
f = 1.0 kHz
25
15
10
95
MHz
pF
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
Typical Characteristics
1000
V
CE
= 5V
25 °C
125 °C
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β
= 10
100
- 40 °C
125 °C
0.2
25 °C
10
0.1
- 40 °C
1
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
TN3440A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1000
800
600
400
200
0
- 40 °C
V
BE(O N)
- BASE- EMITTER ON VOLTAGE (mV)
V
BESAT
- BASE-E MITTER VOLTAGE (mV)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1000
800
600
400
200
0
- 40 °C
25 °C
125 °C
25 ° C
125 ° C
β
= 10
V
CE
= 5V
1
I
C
10
100
- COLLECTOR CURRENT (mA)
1000
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
Collector-Base / Emitter-Base
Capacitance vs Reverse Bias Voltage
1000
800
600
400
200
100
80
60
40
20
V
CB
= 225V
100
CAPACITANCE (pF)
C
ib
, I
E
= 8
10
1
C
cb
, I
E
= 0
0.1
25
50
75
100
125
T
A
- AMBIENT TE MPE RATURE (
°
C)
150
10
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
10
P
D
- POWER DISSIPATION (W)
1
Power Dissipation vs
Ambient Temperature
TO-226
0.75
5
60 MHz
40 MHz
0.5
40 MHz
20 MHz
20 MHz
0.25
1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
S e Fig 2
e
.0 for va rious
HTB:B
10000
Reeli g Styles
n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V:
QA REV:
D/C1:
D9842
B2
Labe l
5 Reels per
Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019
QTY: 2000
Cus tom ized
Labe l
F63TNR
Labe l
Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Labe l
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
S e Fig 3
e
.0 for 2 Ammo
Pack Option
s
TO-226AE TNR/AMMO PACKING INF R
O MATION
Packing
Reel
Style
A
E
Qua
ntity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
Am m o
M
P
FSCINT
Labe l
327m m x 158m m x 135mm
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Uni t wei gh t
Reel weig ht wi th c om po nents
Amm o weig ht wi th c omp on en ts
= 0.300g m
= 0.868 k g
= 0.880 k g
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized
Labe l
F63TNR
Bar c ode Label
333m m x 231m m x 183mm
Int er med iate B ox
BULK OPTION
S e Bulk P
e
acking
Informat ion tabl
e
Anti -stati c
FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP
DIMENSION
NO L EAD CLIP
NO L EAD CLIP
NO L EADCLIP
Bub ble Sheets
EOL CO
DE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5
OPTION STD
QUANTITY
1.0 K / BOX
1.0 K / BOX
1.5 K / BOX
1,500 un its per
EO70 box for
s td o pti on
114m m x 102m m x 51mm
EO70 Im mediate B ox
TO-226 STANDARD
STRAIGHT
5 EO70 boxes pe r
Int er med iate B ox
530m m x 130m m x 83mm
Inter med iate box
Cus tomized
Label
FSCINT Labe l
7,500 un its m axim um
per interm edi at e box
for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style
Configuration:
Fi gure 2.0
Machine Option "A" (H)
Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging
Configuration:
Fi gure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
FIRST WIRE OFF IS COL LECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
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