TN4033A
TN4033A
C
TO-226
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA and collector voltages up to 70V.
Sourced from Process 67.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80
80
5.0
1.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN4033A
1.0
8.0
125
50
Units
W
mW/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
TN4033A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150°C
V
EB
= 5.0 V, I
C
= 0
80
80
5.0
50
50
10
V
V
V
nA
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 5.0 V
I
C
=100mA, V
CE
=5.0V,T
A
= -55°C
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 500 mA, V
CE
= 5.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, V
CE
= 0.5 V
75
40
100
70
25
300
V
CE(
sat
)
V
BE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
0.15
0.5
0.9
1.1
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
1.0
20
110
4.0
pF
pF
SWITCHING CHARACTERISTICS
t
s
t
on
t
f
Storage Time
Turn-On Time
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
I
C
= 500 mA, I
B1
= 50 mA
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
350
100
50
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
TN4033A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
300
V
CE
= 5V
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
250
200
150
100
50
0
0.1
25 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β
= 10
0.4
25 °C
125 °C
0.2
- 40
°
C
- 40 °C
FE
-
h
0.3
1
3
10
30
100 300
I
C
- COLLECTOR CURRENT (mA)
1000
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
1
- 40
°
C
0.8
- 40
°
C
0.8
25 °C
125 °C
0.6
25 °C
0.6
0.4
125 °C
0.4
10
I
C
100
- COLLECTOR CURRENT ( mA)
1000
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
50
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 50V
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
500
f = 1.0 MHz
CAPACITANCE (pF)
200
100
50
20
10
C ibo
10
1
0.1
C obo
25
50
75
100
125
T
A
- AMBIENT TE MPE RATURE (
°
C)
150
6
0.1
1
10
REVERSE BIAS VOLTAGE (V)
50
TN4033A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times vs
Collector Current
240
V
CE
= -10V
Turn On and Turn Off Times vs
Collector Current
500
t off
400
TIME (ns)
300
200
100
0
10
I
B1
= I
B2
= I
C
V
CC
= - 30V 10
200
TIME (ns)
160
120
80
40
0
V
CE
= -1.0V
t on
100
500
I
C
- COLLECTOR CURRENT (mA)
1000
1
2
I
C
20
100
- COLLECTOR CURRENT (mA)
200
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
TO-226
0.75
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
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October 1999, Rev. A1
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