Ordering number : ENA0417
TND312S
SANYO Semiconductors
DATA SHEET
ExPD (Excellent Power Device)
TND312S
Features
•
•
•
•
•
•
•
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General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,
Switching Power Supply, and DC / DC Converter Applications
Dual buffer.
Monolithic structure (High voltage CMOS process adopted).
Withstand voltage of 25V is assured.
Wide range of operating voltage : 4.5V to 25V.
Peak outpout current : 2A.
Fast switching time (25ns typical at 1000pF load).
Fully compatible input to TTL / CMOS. (VIH=not more than 2.6V, at VDD=4.5 to 25V)
Built-in input pull-down resistance.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Supply Voltage
Input Voltage
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDD
VIN
PD max
Tj
Tstg
Conditions
Ratings
0 to 25
GND--0.3 to VDD+0.3
0.3
--55 to +150
--55 to +150
Unit
V
V
W
°C
°C
Recommended Operating Conditions
at Ta=25°C
Parameter
Operating Supply Voltage
Operating Temperature
Symbol
VDD
Topr
Conditions
Ratings
4.5 to 25
--40 to +125
Unit
V
°C
Electrical Characteristics
(AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V
Parameter
Turn-On Rise Time
Turn-Off Fall Time
Delay Time
Symbol
tr
tf
tD1
tD2
CL=1000pF
CL=1000pF
CL=1000pF
CL=1000pF
Conditions
Ratings
min
typ
20
25
30
45
max
35
40
45
60
Unit
ns
ns
ns
ns
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0606IP TI IM TB-00001540 No. A0417-1/5
TND312S
Electrical Characteristics
(DC Characteristics) at Ta=25°C, VDD=4.5 to 25V
Parameter
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Bias Current
Logic “0” Input Bias Current
High Level Output Voltage
Low Level Output Voltage
VDD Supply Current
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
Output On Resistance
Symbol
VIH
VIL
IIN+
IIN--
VOH
VOL
Isupp
IO+
IO--
ROUT
VIN=VDD=25V
VIN=0V or VDD
IO=0A
IO=0A
VDD=10V, VIN=3V, (both inputs)
VDD=10V, VIN=0V, (both inputs)
VDD=18V, PW≤10µs, VOUT=0V
VDD=18V, PW≤10µs, VOUT=18V
VDD=18V, Iload=10mA, VOUT=“H”
VDD=18V, Iload=10mA, VOUT=“L”
2.0
2.0
4
3
6
5
--1
VDD--0.1
0.1
1.0
4.5
0.2
Conditions
Ratings
min
2.6
0.8
20
55
1
typ
max
Unit
V
V
µA
µA
V
V
mA
mA
A
A
Ω
Ω
Package Dimensions
unit : mm (typ)
7005-007
8
5
0.3
4.4
6.0
0.2
1
4
0.43
5.0
1 : NC
2 : IN A
3 : GND
4 : IN B
5 : OUT B
6 : VDD
7 : OUT A
8 : NC
SANYO : SOP8
0.595
1.27
Block Diagram
VDD
IN
0.1
1.5
1.8 MAX
OUT
GND
No. A0417-2/5
TND312S
Switching Time Measuring Circuit
VDD=18V
4.7µF
0.1µF
TND312S
INPUT A
OUTPUT A
1000pF
OUTPUT B
1000pF
INPUT B
INPUT RISE
AND FALL +5V
TIMES=5ns
+0.4V
10%
tD1
+18V
NONINVERTING
OUTPUT
0V
10%
tr
INPUT
90%
tD2
90%
90%
10%
tf
50
tr -- Tc
VDD=18V
VIN=5V
CL=1000pF
50
tr -- VDD
VIN=5V
CL=1000pF
Turn-On Rise Time, tr -- ns
Turn-On Rise Time, tr -- ns
40
40
30
30
20
20
10
10
0
--50
0
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03751
Case Temperature, Tc --
°C
50
IT03750
50
tf -- Tc
VDD=18V
VIN=5V
CL=1000pF
Turn-Off Fall Time, tf -- ns
Supply Voltage, VDD -- V
tf -- VDD
VIN=5V
CL=1000pF
Turn-Off Fall Time, tf -- ns
40
40
30
30
20
20
10
10
0
--50
0
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03753
Case Temperature, Tc --
°C
IT03752
Supply Voltage, VDD -- V
No. A0417-3/5
TND312S
50
tD1 -- Tc
VDD=18V
VIN=5V
CL=1000pF
Delay Time, tD1 -- ns
100
tD1 -- VDD
VIN=5V
CL=1000pF
40
80
Delay Time, tD1 -- ns
30
60
20
40
10
20
0
--50
0
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03762
Case Temperature, Tc --
°C
100
IT03761
200
tD2 -- Tc
VDD=18V
VIN=5V
CL=1000pF
Delay Time, tD2 -- ns
Supply Voltage, VDD -- V
tD2 -- VDD
VIN=5V
CL=1000pF
80
Delay Time, tD2 -- ns
150
60
100
40
50
20
0
--50
0
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03757
Case Temperature, Tc --
°C
4
IT03756
4
IO(+) -- Tc
VDD=18V
Output "Low" Short Circuit
Pulsed Current, IO(--) -- A
Supply Voltage, VDD -- V
IO(--) -- Tc
VDD=18V
Output "High" Short Circuit
Pulsed Current, IO(+) -- A
3
3
2
2
1
1
0
--50
--25
0
25
50
75
100
125
150
0
--50
--25
0
25
50
75
100
125
150
Case Temperature, Tc --
°C
3.5
IT03758
0.40
Case Temperature, Tc --
°C
IT03759
IO(±) -- VDD
Allowable Power Dissipation, PD -- W
PD -- Ta
3.0
VIN=5V
CL=10µF
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Output High/Low Short Circuit
Pulsed Current, IO(±) -- A
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
30
IT11081
0
20
40
60
80
100
120
140
160
Supply Voltage, VDD -- V
Ambient Temperature, Ta --
°C
IT03760
No. A0417-4/5
TND312S
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0417-5/5
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