Doc No.
TT4-EA-12099
Revision.
3
Product Standards
MOS FET
MTM684100LBF
MTM684100LBF
Dual P-channel MOSFET
Unit: mm
For switching
8
2.9
0.3
7
6
5
0.16
Low drain-source On-state Resistance
RDS(on) typ. = 32 m (VGS =-4.0 V)
Low drive voltage:1.8V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
3
4
Marking Symbol:
1C
Basic Part Number:
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
0.65
Dual MTM23110 (Individual)
1.
2.
3.
4.
Source
Gate
Source
Gate
Panasonic
JEITA
Code
WMini8-F1
SC-115
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Drain-source Voltage
FET1 Gate-source Voltage
FET2 Drain current
Peak drain current
Total power dissipation
*1
Channel temperature
Overall
Operating ambient temperature
Storage temperature
Note)
Internal Connection
Rating
-12
±8
-4.8
-19
1.0
150
-40 to +85
-55 to +150
2
Unit
V
V
A
A
W
°C
°C
°C
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
(D)
8
(D)
7
(D)
6
1
(S)
2
(G)
3
(S)
*1 Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm Copper foil
of the drain portion should have a area of 300 mm or more
PD absolute maximum rating without a heat shink: 400 mW
Pin Name
1.
2.
3.
4.
Source
Gate
Source
Gate
5.
6.
7.
8.
Drain
Drain
Drain
Drain
Established : 2010-01-06
Revised
: 2013-10-15
2.4
2.8
(0.81)
Features
5.
6.
7.
8.
Drain
Drain
Drain
Drain
(D)
5
4
(G)
Page 1 of 6
Doc No.
TT4-EA-12099
Revision.
3
Product Standards
MOS FET
MTM684100LBF
Electrical Characteristics Ta = 25C
3C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Symbol
VDSS
IDSS
IGSS
Vth
Conditions
Min
-12
Typ
Max
Unit
V
μA
μA
V
m
m
m
S
pF
pF
pF
ns
ns
ns
ns
ID = -1 mA, VGS = 0
VDS = -12 V, VGS = 0
VGS = ±6.4 V, VDS = 0
ID = -1.0 mA, VDS = -6.0 V
RDS(ON)1
ID = -1.0 A, VGS = -4.0 V
Drain-source ON resistance
RDS(ON)2
ID = -0.5 A, VGS = -2.5 V
RDS(ON)3
ID = -0.2 A, VGS = -1.8 V
Forward transfer admittance
|Yfs|
ID = -1.0 A, VDS = -10 V
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
VDS = -10 V, VGS = 0, f = 1 MHz
Coss
Reverse transfer capacitance (Common source)
Crss
*1
td(on) VDD = -6 V, VGS = 0 V to -4 V
Turn-on delay time
*1
tr
ID = -1.0 A
Rise time
*1
td(off) VDD = -6 V, VGS = -4 V to 0 V
Turn-off delay time
*1
tf
ID = -1.0 A
Fall time
Note)
-0.3
-1.0
±10
-0.65 -1.0
32
42
37
55
75
50
1200
110
110
8
11
235
85
3.5
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2 of 6
Established : 2010-01-06
Revised
: 2013-10-15
Doc No.
TT4-EA-12099
Revision.
3
Product Standards
MOS FET
MTM684100LBF
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 3 of 6
Established : 2010-01-06
Revised
: 2013-10-15
Doc No.
TT4-EA-12099
Revision.
3
Product Standards
MOS FET
MTM684100LBF
Technical Data ( reference )
ID - VDS
-4.5
-4
Drain current ID (A)
-4.0 V
-2.5 V
-0.075
Ta = 85
℃
-0.1
ID - VGS
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0
Drain current ID (A)
-2.0 V
-1.5 V
VGS = -1.0 V
25
℃
-0.05
-40
℃
-0.025
0
-0.1
-0.2
-0.3
-0.4
-0.5
0
-0.25
-0.5
-0.75
-1
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS - VGS
-0.2
RDS(on) - ID
100
Drain-source Voltage VDS (V)
-0.15
Drain-source On-state Resistance
RDS(on) (m)
-2.5 V
-0.1
ID = -1 mA
-0.5 mA
VGS = -4.0 V
-0.05
-0.2 mA
0
0
-1
-2
-3
-4
-5
-6
10
-0.01
-0.1
-1
-10
Gate-source Voltage VGS (V)
Drain Current ID (A)
Capacitance - VDS
10000
-6
Dynamic Input/Output Characteristics
Gate-source Voltage VGS (V)
-5
-4
VDD = -6 V
-3
-2
-1
0
Capacitance C (pF)
1000
Ciss
Coss
Crss
100
-0.1
-1
-10
-100
0
Drain-source Voltage VDS (V)
5
10
15
Total Gate Charge Qg (nC)
20
Page 4 of 6
Established : 2010-01-06
Revised
: 2013-10-15
Doc No.
TT4-EA-12099
Revision.
3
Product Standards
MOS FET
MTM684100LBF
Technical Data ( reference )
Vth - Ta
-1
Gate-source Threshold Voltage
Vth (V)
-0.8
-0.6
-0.4
-0.2
0
-50
0
50
Temperature (℃)
Drain-source On-resistance
RDS(on) (m)
RDS(on) - Ta
50
VGS = -2.5 V
40
30
20
10
0
-4.0 V
100
150
-50
0
50
Temperature (℃)
100
150
PD - Ta
1.2
Total Power Dissipation PD (W)
1
0.8
0.6
Mounted on glass-epoxy board
(25.4 x 25.4 x 0.8 mm)
Non-heat sink
0.4
0.2
0
0
50
100
150
Temperature Ta (C)
Rth - tsw
1000
Safe Operating Area
-100
IDp = -19 A
Thermal Resistance Rth (C/W)
Drain Current ID (A)
-10
1 ms
100
-1
Operation in this area
is limited by RDS(on)
10 ms
10
100 ms
1s
-0.1
1
0.01
0.1
1
10
100
1000
-0.01
-0.01
Ta = 25
C,
Glass epoxy board
(25.4 × 25.4 × t0.8 mm) coated with
copper foil,
DC
-0.1
-1
VDS(V)
-10
-100
Pulse Width tsw (s)
Page 5 of 6
Established : 2010-01-06
Revised
: 2013-10-15
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