FGD3N60LSD IGBT
FGD3N60LSD
IGBT
Features
• High Current Capability
• Very Low Saturation Voltage : V
CE(sat)
= 1.2 V @ I
C
= 3A
• High Input Impedance
Description
ON Semiconductor's
Insulated Gate Bipolar Transistors
(IGBTs)
provide very low conduction losses. The device is
designed for applica-tions where very low On-Voltage Drop is
a required feature.
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
C
C
G
G
E
D-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Derating Factor
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
(1)
FGD3N60LSD
600
±
25
6
3
25
3
25
40
0.32
-55 to +150
-55 to +150
250
Units
V
V
A
A
A
A
A
W
W/°C
°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
Max.
3.1
100
Units
°C/W
°C/W
©2006
Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FGD3N60LSD/D
FGD3N60LSD IGBT
Package Marking and Ordering Information
Device Marking
FGD3N60LSD
Device
FGD3N60LSDTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 3mA, V
CE
= V
GE
I
C
= 3A
,
I
C
= 6A
,
V
GE
= 10V
V
GE
= 10V
2.5
--
--
3.2
1.2
1.8
5.0
1.5
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V
,
V
GE
= 0V,
f = 1MHz
--
--
--
185
20
5.5
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Measured 5mm from PKG
V
CE
= 480 V, I
C
= 3A,
V
GE
= 10V
V
CC
= 480 V, I
C
= 3A,
R
G
= 470Ω, V
GE
= 10V,
Inductive Load, T
C
= 125°C
V
CC
= 480 V, I
C
= 3A,
R
G
= 470Ω, V
GE
= 10V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
40
40
600
600
250
1.00
1.25
40
45
620
800
300
1.9
2.2
12.5
2.8
4.9
7.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
uJ
mJ
mJ
ns
ns
ns
ns
uJ
mJ
mJ
nC
nC
nC
nH
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2
FGD3N60LSD IGBT
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
I
F
= 3A
Test Conditions
T
C
= 25°C
T
C
= 100°C
I
F
= 3A,
di/dt = 100A/us
V
R
= 200V
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.5
1.55
234
--
2.64
--
309
--
Max.
1.9
--
--
--
--
--
--
--
Units
V
ns
A
nC
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3
FGD3N60LSD IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
30
Common Emitter
T
C
= 25
°
C
20V
15V
Figure 2. Typical Output Characteristics
30
Common Emitter
T
C
= 125
°
C
Collector Current, I
C
[A]
24
Collector Current, I
C
[A]
10V
24
20V
15V
18
V
GE
= 8V
18
10V
V
GE
= 8V
12
12
6
6
0
0
2
4
6
8
0
0
2
4
6
Collector-Emitter Voltage, V
CE
[V]
8
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Output Characteristics
10
Common Emitter
V
GE
= 10V
Figure 4. Transfer Characteristics
10
Common Emitter
V
CE
= 20V
T
C
= 25
°
C
T
C
= 125
°
C
Collector Current, I
C
[A]
T
C
= 125
°
C
6
Collector Current, I
C
[A]
1
10
8
T
C
= 25
°
C
8
6
4
4
2
2
0
0.1
Collector-Emitter Voltage, V
CE
[V]
0
1
10
Gate-Emitter Voltage, V
GE
[V]
Figure 5. Saturation Voltage vs. Case
3
Comm on Emitter
V
GE
= 10V
Figure 6. Capacitance Characteristics
600
Com m on Em itter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
Collector-Emitter Voltage, V
CE
[V]
500
2
I
C
= 6A
Capacitance [pF]
400
Cies
300
Coes
200
Cres
1
I
C
= 3A
I
C
= 1.5A
100
0
0
30
60
90
120
150
0
1
10
Case Temperature, T
C
[
°
C]
Collector - Emitter Voltage, V
CE
[V]
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4
FGD3N60LSD IGBT
Typical Performance Characteristics
Figure 7. Gate Charge
12
(Continued)
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
C o m m o n E m itte r
V
CC
= 4 8 0 V , V
GE
= 1 0 V
I
C
= 3 A
T
C
= 25
°
C
T
C
= 125
°
C
Com m on Em itter
R
L
= 160
Ω
Vcc = 480V
T
C
= 25
°
C
10
Gate - Emitter Voltage, V
GE
[V]
8
6
Switching Time [ns]
100
T on
Tr
4
2
0
0
2
4
6
8
10
12
10
200
400
600
800 1000
Gate Charge, Q
g
[nC]
G ate R esistance, R
G
[
Ω
]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
10000
Com m on Em itter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
Switching Time [ns]
Toff
1000
Tf
T
C
= 125
°
C
Figure 10. Switching Loss vs. Gate Resistance
10000
Eoff
Switching Loss [
µ
J]
1000
Eon
100
Com m on Em itter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
100
200
400
600
800 1000
10
Gate Resistance, R
G
[
Ω
]
200
400
Gate Resistance, R
G
[
Ω
]
600
800 1000
Figure 11. Turn-On Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, V
GE
= 10V
100
R
G
= 470
Ω
T
C
= 125
°
C
T
C
= 25
°
C
Ton
Figure 12. Turn-Off Characteristics vs.
Collector Current
1000
Switching Time [ns]
Toff
Tf
Tr
Switching Time [ns]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
Ω
T
C
= 25
°
C
10
2
Collector Current, I
C
[A]
3
4
100
2
T
C
= 125
°
C
Collector Current, I
C
[A]
3
4
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