PRODUCT: TVB058SA-L
SiBar
TM
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
Thyristor Surge Protectors
Raychem Circuit Protection Products
DOCUMENT: SCD 25052
PCN: 539912
REV LETTER: H
REV DATE:APRIL 28, 2007
PAGE NO.: 1 OF 2
Specification Status: Released
PHYSICAL DESCRIPTION
Marking:
058A
Date Code
Device Code
A
B
MIN
1.90
(0.075)
C
D**
H
J
K
MIN
MAX
MIN
MAX
mm:
4.06
4.57
3.30
3.94
in*: (0.160) (0.180) (0.130) (0.155)
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
2.44
1.95
2.20
0.05
0.20
0.15
0.31
0.76
1.52
(0.096) (0.077) (0.086) (0.002) (0.008) (0.006) (0.012) (0.030) (0.060)
P
S
REF
MIN
MAX
mm:
0.51
5.21
5.59
in*: (0.020) (0.205) (0.220)
*Rounded off approximation
** D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P
Other Physical Characteristics
Form Factor:
Lead Material:
Encapsulation Material:
Solderability:
Solder Heat Withstand:
Solvent Resistance:
Mechanical Shock:
Vibration:
SMB (Surface Mount, JEDEC DO-214AA Package)
Matte Tin finish
Epoxy, meets UL94 V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
per MIL-STD-750, Method 2056
Tape and Reel packaging per EIA 481-1
Agency Recognition:
Precedence:
CAUTION:
Materials Information
RoHS Compliant
UL
This specification takes precedence over documents referenced herein.
Operation beyond the rated voltage or current may result in rupture, electrical arcing or flame.
ELV Compliant
OBSOLETE
NOT the LATEST
REVISION
© 2006, 2007 Tyco Electronics Corporation. All rights reserved.
DEVICE RATINGS @ 25º C (Both Polarities)
PRODUCT: TVB058SA-L
SiBar
TM
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
Thyristor Surge Protectors
Raychem Circuit Protection Products
Symbol
VDM
IPP
1
IPP
2
IPP
3
IPP
4
IPP
5
IPP
6
IPP
7
di/dt
di/dt
DOCUMENT: SCD 25052
PCN: 539912
REV LETTER: H
REV DATE:APRIL 28, 2007
PAGE NO.: 2 OF 2
Parameter
Repetitive Off-State Voltage, Maximum at
ID
= 5 µA
Non-Repetitive Peak
Telcordia GR-1089 CORE 10x1000 µs
Impulse Current
TIA-968 lightning Type A Metallic 10/560 µs
Double exponential
TIA-968 lightning Type A Longit. 10/160 µs
Waveform
Telcordia GR-1089 Intrabuilding 2/10 µs
(Notes 1 and 2)
IEC61000-4-5 (Voc 1.2/50us) 8/20 µs
ITU-T K.20/K.21 (Voc 10/700us) 5/310us
TIA-968 lightning Type B (Voc 9/720us) 5/320 µs
Critical Rate of Rise of On-State Current
Power Pulse Amplifier, C=30μF, V=600V
Maximum 2x10 µsec waveform, V
OC
=750V, I
SC
=150A peak
DEVICE THERMAL RATINGS
Storage Temperature Range
Operating Temperature Range
Blocking or conducting state
Overload Junction Temperature
Maximum; Conducting state only
Maximum Lead Temperature for Soldering Purpose; for 10 seconds
Value
58
50
70
90
150
150
80
80
500
100
Units
V
A
A
A
A
A
A
A
A/µs
A/µs
TSTG
TA
TJ
TL
-55 to 150
-40 to 125
+150
+260
ºC
ºC
ºC
ºC
ELECTRICAL CHARACTERISTICS Both polarities (T
J
@ 25ºC unless otherwise noted)
Characteristics
Symbol
Min
Breakover Voltage
(+25ºC)
VBO
----
(dv/dt = 0.4kV/ms, I
SC
=900mA, V
DC
= 500V (both polarities))
Breakover Voltage Temperature Coefficient
dVBO/dTJ
----
Off-State Current
(VD1= 50V)
ID1
----
(VD2=VDM)
ID2=IDM
----
On-State Voltage (IT=1A)
VT
----
PW
≤
300 µsec, Duty Cycle
≤
2% (Note 2)
Breakover Current
IBO
----
Holding Current (Note 2)
IH
150
Peak Onstage Surge Current
ITSM
22
(Measured @ 60Hz, 1 cycle, 600V)
Critical Rate of Rise of Off-State Voltage
dv/dt
2000
(Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC)
Capacitance
(f=1.0 Mhz, 50Vdc bias, 1Vrms)
C1
----
(f=1.0 Mhz, 2Vdc bias,1Vrms)
C2
----
Note 1. Allow cooling before testing second polarity
Note 2. Measured under pulse conditions to reduce heating
Typ
64
0.1
-----
-----
-----
-----
----
----
----
43
80
Max
78
-----
2.0
5.0
4.0
800
----
----
----
----
----
Units
V
%/ºC
µA
µA
V
mA
mA
A
V/µs
pF
pF
VOLTAGE-CURRENT CHARACTERISTIC
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