FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
FOD814 Series, FOD817 Series
4-Pin DIP Phototransistor Optocouplers
Features
•
AC Input Response (FOD814)
•
Current Transfer Ratio in Selected Groups:
FOD814: 20–300%
FOD814A: 50–150%
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
•
Minimum BV
CEO
of 70 V Guaranteed
•
Safety and Regulatory Approvals
– UL1577, 5,000 VAC
RMS
for 1 Minute
– DIN EN/IEC60747-5-5
Applications
FOD814 Series
•
AC Line Monitor
•
Unknown Polarity DC Sensor
•
Telephone Line Interface
FOD817 Series
•
Power Supply Regulators
•
Digital Logic Inputs
•
Microprocessor Inputs
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
ANODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
CATHODE 2
3 EMITTER
4
FOD814
FOD817
1
Figure 1. Schematic
Figure 2. Package Outlines
©2006 Semiconductor Components Industries, LLC.
July-2018,
Rev.
5
Publication Order Number:
FOD814/D
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–III
30/110/21
2
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option W, 0.4" Lead Spacing)
Value
1360
1594
850
8000
7
7
10
0.4
175
400
700
> 10
11
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
mm
°C
mA
mW
V
PR
V
IORM
V
IOTM
DTI
T
S
I
S,INPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature
(1)
Input Current
(1)
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
P
S,OUTPUT
Output Power
(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
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2
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T
A
= 25°C Unless otherwise specified.
Symbol
Total Device
T
STG
T
OPR
T
J
T
SOL
JC
P
TOT
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
C
Parameter
Value
FOD814
FOD817
Unit
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Junction-to-Case Thermal Resistance
Total Device Power Dissipation
Continuous Forward Current
Reverse Voltage
Power Dissipation
Derate Above 100°C
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate Above 90°C
±50
-55 to +150
-55 to +105
-55 to +110
-55 to +125
260 for 10 seconds
210
200
50
6
70
1.7
70
6
50
150
2.9
°C
°C
°C
°C
°C/W
mW
mA
V
mW
mW/°C
V
V
mA
mW
mW/°C
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
C
t
Forward Voltage
Reverse Current
Terminal Capacitance
FOD814
FOD817
FOD817
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
I
F
= ±20 mA
I
F
= 20 mA
V
R
= 4.0 V
V = 0, f = 1 kHz
V = 0, f = 1 kHz
V
CE
= 20 V, I
F
= 0
V
CE
= 20 V, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
E
= 10 µA, I
F
= 0
I
E
= 10 µA, I
F
= 0
70
70
6
6
50
30
1.2
1.2
1.4
1.4
10
250
250
100
100
V
µA
pF
Parameter
Device
Test Conditions
Min.
Typ.
Max.
Unit
DETECTOR
I
CEO
BV
CEO
BV
ECO
Collector Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
nA
V
V
DC Transfer Characteristics
Symbol
Parameter
Device
FOD814
FOD814A
FOD817
CTR
Current Transfer Ratio
(2)
FOD817A
FOD817B
FOD817C
FOD817D
V
CE(SAT)
Collector-Emitter Saturation
Voltage
FOD814
FOD817
I
F
= ±20 mA, I
C
= 1 mA
I
F
= 20 mA, I
C
= 1 mA
I
F
= 5 mA, V
CE
= 5 V
Test Conditions
I
F
= ±1 mA, V
CE
= 5 V
Min.
20
50
50
80
130
200
300
Typ.
Max.
300
150
600
160
260
400
600
Unit
%
0.1
0.1
0.2
0.2
V
AC Transfer Characteristics
Symbol
f
C
t
r
t
f
Parameter
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Device
FOD814
FOD814,
FOD817
FOD814,
FOD817
Test Conditions
V
CE
= 5 V, I
C
= 2 mA,
R
L
= 100
,
-3 dB
V
CE
= 2 V, I
C
= 2 mA,
R
L
= 100
(3)
Min.
15
Typ.
80
4
3
Max.
Unit
kHz
18
18
µs
µs
Notes:
2. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
3. For test circuit setup and waveforms, refer to page 7.
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4
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
(Continued)
T
A
= 25°C unless otherwise specified.
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Parameter
Input-Output Isolation
Voltage
(4)
Isolation Resistance
Isolation Capacitance
Device
FOD814,
FOD817
FOD814,
FOD817
FOD814,
FOD817
Test Conditions
f = 60 Hz, t = 1 minute,
I
I-O
2 µA
V
I-O
= 500 V
DC
V
I-O
= 0, f = 1 MHz
Min.
5000
Typ.
Max.
Unit
VAC
RMS
5x10
10
1x10
11
0.6
1.0
pf
Note:
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
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5
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