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SM8S24A-001HE3/2D

产品描述TVS DIODE 24V 38.9V DO218AB
产品类别电路保护   
文件大小102KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

SM8S24A-001HE3/2D概述

TVS DIODE 24V 38.9V DO218AB

SM8S24A-001HE3/2D规格参数

参数名称属性值
类型齐纳
单向通道1
电压 - 反向关态(典型值)24V
电压 - 击穿(最小值)26.7V
电压 - 箝位(最大值)@ Ipp38.9V
电流 - 峰值脉冲(10/1000µs)170A
功率 - 峰值脉冲6600W(6.6kW)
电源线路保护
应用汽车级
工作温度-55°C ~ 175°C(TJ)
安装类型表面贴装
封装/外壳DO-218AB
供应商器件封装DO-218AB

文档预览

下载PDF文档
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
DO-218AB
DO-218AB
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
V
WM
I
FSM
T
J
max.
Polarity
Package
11.1 V to 52.8 V
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with ± 5 % tolerance)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
SYMBOL
P
PPM
P
D
I
PPM
(1)
VALUE
6600
5200
8.0
See next table
700
-55 to +175
UNIT
W
W
A
A
°C
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse derated above T = 25 °C
A
I
FSM
T
J
, T
STG
Revision: 31-Aug-16
Document Number: 88387
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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