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MT25QL256ABA8ESF-0SIT

产品描述IC FLASH 256M SPI 133MHZ 16SOP2
产品类别存储    存储   
文件大小1MB,共97页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
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MT25QL256ABA8ESF-0SIT概述

IC FLASH 256M SPI 133MHZ 16SOP2

MT25QL256ABA8ESF-0SIT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micron Technology
包装说明SOP2-16
Reach Compliance Codecompliant
Factory Lead Time16 weeks
Samacsys DescriptionNOR Flash Serial-SPI 3V/3.3V 256M-bit 32M x 8 16-Pin SOP-II T/R/Tray
最大时钟频率 (fCLK)133 MHz
JESD-30 代码R-PDSO-G16
长度10.3 mm
内存密度268435456 bit
内存集成电路类型FLASH
内存宽度1
功能数量1
端子数量16
字数268435456 words
字数代码256000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256MX1
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
编程电压3 V
座面最大高度2.3 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.5 mm

文档预览

下载PDF文档
256Mb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT25QL256ABA
Features
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 133 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased through-
put up to 90 MB/s
• Supported protocols: Extended, Dual and Quad I/O
both STR and DTR
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• 3-byte and 4-byte address modes – enable memory
access beyond 128Mb
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Bulk erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Erase performance: 400KB/sec (64KB sector)
• Erase performance: 80KB/sec (4KB sub-sector)
• Program performance: 2MB/sec
• Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BA19h)
– Extended device ID: two additional bytes identify
device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 2.7–3.6V
• Density
– 256Mb
• Device stacking
– Monolithic
• Device generation
• Die revision
• Pin configuration
– RESET# and HOLD#
• Sector size
– 64KB
• Packages – JEDEC-standard, RoHS-
compliant
– 24-ball T-PBGA 05/6mm × 8mm
(5 × 5 array)
– 24-ball T-PBGA 05/6mm × 8mm
(4 × 6 array)
– 16-pin SOP2, 300 mils
(SO16W, SO16-Wide, SOIC-16)
– W-PDFN-8 6mm × 5mm
(MLP8 6mm × 5mm)
– W-PDFN-8 8mm × 6mm
(MLP8 8mm × 6mm)
• Security features
– Standard security
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
– From –40°C to +125°C
Marking
L
256
A
B
A
8
E
12
14
SF
W7
W9
0
S
A
IT
AT
UT
CCMTD-1725822587-3368
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.

 
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