AS4C256M8D3A-12BIN
256M x 8 bit DDR3 Synchronous DRAM (SDRAM)
Features
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JEDEC Standard Compliant
Power supplies: V
DD
& V
DDQ
= +1.5V
±
0.075V
Operating temperature: -40~95°C (TC)
Supports JEDEC clock jitter specification
Fully synchronous operation
Fast clock rate: 800MHz
Differential Clock, CK & CK#
Bidirectional differential data strobe
- DQS & DQS#
8 internal banks for concurrent operation
8n-bit prefetch architecture
Pipelined internal architecture
Precharge & active power down
Programmable Mode & Extended Mode registers
Additive Latency (AL): 0, CL-1, CL-2
Programmable Burst lengths: 4, 8
Burst type: Sequential / Interleave
Output Driver Impedance Control
8192 refresh cycles / 64ms
- Average refresh period
7.8µs @ -40°C
≦
TC
≦
+85°C
3.9µs @ +85°C
≦
TC
≦
+95°C
Write Leveling
ZQ Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
RoHS compliant
Auto Refresh and Self Refresh
78-ball 8 x 10.5 x 1.0mm FBGA package
- Pb and Halogen Free
Overview
The 2Gb Double-Data-Rate-3 DRAMs is double data
rate architecture to achieve high-speed operation. It is
internally configured as an eight bank DRAM.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 bank
devices. These synchronous devices achieve high
speed double-data-rate transfer rates of up to 1866
Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3
DRAM key features and all of the control and address
inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the
cross point of differential clocks (CK rising and CK#
falling). All I/Os are synchronized with differential DQS
pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V
power supply and are available in BGA packages.
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Table 1. Ordering Information
Product part No
AS4C256M8D3A-12BIN
Org
256M x 8
Temperature
Industrial
-40°C
to
95°C
Max Clock (MHz)
800
Package
78-ball FBGA
Table 2. Speed Grade Information
Speed Grade
DDR3-1600
Clock Frequency
800 MHz
CAS Latency
11
t
RCD
(ns)
13.75
t
RP
(ns)
13.75
Confidential
-2／83-
Rev. 1.0 May 2016
AS4C256M8D3A-12BIN
Figure 3. State Diagram
This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands
to control them. In particular, situations involving more than one bank, the enabling or disabling of on-die
termination, and some other events are not captured in full detail.
Power
applied
Power
On
Reset
Procedure
Initialization
MRS,MPR,
Write
Leveling
SR
SR E
X
Self
Refresh
from any
RESET
state
ZQCL
MRS
ZQ
Calibration
ZQCL,ZQCS
Idle
REF
Refreshing
E
PD X
PD
ACT
ACT = Active
PRE = Precharge
PREA = Precharge All
MRS = Mode Register Set
REF = Refresh
RESET = Start RESET Procedure
Read = RD, RDS4, RDS8
Read A = RDA, RDAS4, RDAS8
Active
Power
Down
PD
X
PD
E
Activating
Precharge
Power
Down
Bank
Activating
RE
AD
ITE
Write = WR, WRS4, WRS8
Write A = WRA, WRAS4, WRAS8
ZQCL = ZQ Calibration Long
ZQCS = ZQ Calibration Short
PDE = Enter Power-down
PDX = Exit Power-down
SRE = Self-Refresh entry
SRX = Self-Refresh exit
MPR = Multi-Purpose Register
A
W
TE
RI
WR
WRITE
READ
Writing
WRITE
READ
AD
RE
A
Reading
WRITE A
READ A
EA
RIT
W
RE
AD
A
PRE, PREA
Writing
PR
E
,P
RE
A
P
E,
PR
A
RE
Reading
Automatic Sequence
Command Sequence
Precharging
Confidential
-5／83-
Rev. 1.0 May 2016
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