电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BM60055FV-CE2

产品描述DGTL ISO 2.5KV GATE DRVR 28SSOP
产品类别半导体    模拟混合信号IC   
文件大小4MB,共42页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
下载文档 详细参数 全文预览

BM60055FV-CE2在线购买

供应商 器件名称 价格 最低购买 库存  
BM60055FV-CE2 - - 点击查看 点击购买

BM60055FV-CE2概述

DGTL ISO 2.5KV GATE DRVR 28SSOP

BM60055FV-CE2规格参数

参数名称属性值
技术磁耦合
通道数1
电压 - 隔离2500Vrms
共模瞬态抗扰度(最小值)100kV/µs
传播延迟 tpLH / tpHL(最大值)250ns,250ns
上升/下降时间(典型值)30ns,30ns
电流 - 峰值输出5A
电压 - 电源9 V ~ 24 V
工作温度-40°C ~ 125°C
安装类型表面贴装
封装/外壳28-SSOP(0.315",8.00mm 宽)
供应商器件封装28-SSOP

文档预览

下载PDF文档
Datasheet
1ch Gate Driver Providing Galvanic Isolation
2500Vrms Isolation Voltage
BM60055FV-C
General Description
The BM60055FV-C is a gate driver with an isolation
voltage of 2500Vrms, I/O delay time of 250ns, minimum
input pulse width of 170ns. It incorporates the fault signal
output function (FLT_UVLO, FLT_SC, FLT_OT), under
voltage lockout (UVLO) function, short circuit protection
(SCP) function, over temperature protection (OT)
function, over current protection (OC) function, Soft turn
off function, 2 level turn off function, active miller
clamping function, switching controller function and
output state feedback function (OSFB).
Key Specifications
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
Minimum Input Pulse Width:
2500 [Vrms] (Max)
24 [V] (Max)
250 [ns] (Max)
170 [ns] (Max)
Package
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2mm x 10.4mm x 2.4mm
Features
Fault Signal Output Function
Under Voltage Lockout Function
Short Circuit Protection Function
Over Current Protection Function
Over Temperature Protection
Temperature Compensation of OC
Soft Turn Off Function of SCP
2 Level Turn Off Function
Active Miller Clamping
Switching Controller
Output State Feedback Function
UL1577 Recognized:File No. E356010
AEC-Q100 Qualified
(Note 1)
(Note
1:Grade1)
Applications
Automotive isolated IGBT/MOSFET inverter
gate drive.
Automotive DC-DC converter.
Industrial inverters system.
UPS system.
Typical Application Circuit
GND1
FLT_UVLO
INB
ECU
INA
OSFB
FLT_OT
FLT_SC
FB
DAC
V_BATT
-
+
+
FLT
RESET OSC
OSFB
T IMER
Q
S
R
PRE
DRIVER
LOGIC
LOGIC
CURRENT
SOURCE
-
+
-
+
T IMER
T IMER
2 level T urn
off Contol
COMP
V_BATT
Snubber
VREG
GND1
VCC2
Rec tifier
/ Ripple f ilter
REGULATOR
SLOPE
OSC
OSC
Filter
FET_G
Q
S
R
Filter
SENSE
GND1
UVLO_BATT
-
+
GND2
MAX.Dut y
GND1
Figure 1. Typical Application Circuit
〇Product
structure : Silicon integrated circuit
.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This
product has no designed protection against radioactive rays
1/38
-
+
Rec tifier
/ Ripple f ilter
-
+
-
+
T emp
Compensation
-
+
OSC
GND2
OUT2
OUT1
VCC2
VCC2
PROOUT
TC
TO
TCOMP
RTOFF
LVOFF
SCPIN
OCIN
UVLOIN
GND2
GND2
Filter
Filter
TSZ02201-0818ABH00120-1-2
03.Apr.2018 Rev.003

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1479  2456  471  925  1315  36  29  17  4  31 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved