FGY100T65SCDT
650 V, 100 A Field Stop
Trench IGBT
Short Circuit Rated IGBT
General Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3
rd
generation IGBTs offer the optimum
performance for solar, UPS, motor control, ESS and HVAC
applications where low conduction and switching losses are essential.
Features
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C
•
•
•
•
•
•
•
•
•
G
E
Maximum Junction Temperature: T
J
= 175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: V
CE(sat)
= 1.5 V (Typ.) @ I
C
= 100 A
High Input Impedance
Fast Switching
Short Cirruit Rated 5
ms
Tighten Parameter Distribution
These Devices are Pb−Free and are RoHS Compliant
TO−247
CASE 340CD
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Applications
•
Solar, UPS, Motor Control, ESS, HVAC
ABSOLUTE MAXIMUM RATINGS
(at T
C
= 25°C, Unless otherwise specified)
Symbol
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
I
C
Collector Current @ T
C
= 25°C
Collector Current @ T
C
= 100°C
I
LM
(Note 1)
I
CM
(Note 2)
I
F
Clamped Inductive Load Current @ T
C
= 25°C
Pulsed Collector Current
Diode Forward Current
@ T
C
= 25°C
@ T
C
= 100°C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation @ T
C
= 25°C
Maximum Power Dissipation @ T
C
= 100°C
T
J
T
stg
T
L
T
SC
(Note 3)
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering Purposes, 1/8″ from Case for 5 seconds
Short circuit withstanding time @ T
C
= 150°C
Parameter
Value
650
±25
±30
200
100
300
300
200
100
300
750
375
−55 to +175
−55 to +175
300
5
A
W
W
°C
°C
°C
ms
Unit
V
V
V
A
A
A
A
A
I
FM
(Note 2)
P
D
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V
CC
= 400 V, V
GE
= 15 V, I
C
= 375 A, R
G
= 10
W,
Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. Test condition: V
GE
= 15 V, V
CC
= 400 V.
©
Semiconductor Components Industries, LLC, 2017
1
October, 2017 − Rev. 2
Publication Order Number:
FGY100T65SCDT/D
FGY100T65SCDT
THERMAL CHARACTERISTICS
Symbol
R
qJC
(IGBT)
R
qJC
(Diode)
R
qJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.2
0.3
40
Unit
_C/W
_C/W
_C/W
ELECTRICAL CHARACTERISTICS OF THE IGBT
(T
C
= 25°C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
BV
CES
DBV
CES
/
DT
J
I
CES
I
GES
Collector to Emitter Breakdown
Voltage
Temperature Coefficient of
Breakdown Voltage
Collector Cut-Off Current
G−E Leakage Current
V
GE
= 0 V, I
C
= 1 mA
I
C
= 1 mA, Reference to 25_C
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
650
−
−
−
−
0.56
−
−
−
−
250
±400
V
V/_C
mA
nA
Parameter
Test Conditions
Min
Typ
Max
Unit
ON CHARACTERISTICS
V
GE(th)
V
CE(sat)
G−E Threshold Voltage
Collector to Emitter Saturation
Voltage
I
C
= 100 mA, V
CE
= V
GE
I
C
= 100 A
,
V
GE
= 15 V
I
C
= 100 A
,
V
GE
= 15 V,
T
C
= 175_C
3.5
−
−
5.3
1.5
1.97
6.9
1.9
−
V
V
V
DYNAMIC CHARACTERISTICS
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30 V
,
V
GE
= 0 V,
f = 1 MHz
−
−
−
6310
384
46
−
−
−
pF
pF
pF
SWITCHING CHARACTERISTICS
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CE
= 400 V, I
C
= 100 A,
V
GE
= 15 V
V
CC
= 400 V, I
C
= 100 A,
R
G
= 4.7
W,
V
GE
= 15 V,
Inductive Load, T
C
= 175_C
V
CC
= 400 V, I
C
= 100 A,
R
G
= 4.7
W,
V
GE
= 15 V,
Inductive Load, T
C
= 25_C
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
84
147
216
133
5.4
3.8
9.2
80
160
244
166
9.7
5.2
14.9
157
43
46
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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FGY100T65SCDT
ELECTRICAL CHARACTERISTICS OF THE DIODE
(T
C
= 25°C unless otherwise noted)
Symbol
V
FM
Parameter
Diode Forward Voltage
Test Conditions
I
F
= 100 A
T
C
= 25_C
T
C
= 175_C
I
F
= 100 A, dI
F
/dt = 200 A/ms,
T
C
= 175_C
I
F
= 100 A, dI
F
/dt = 200 A/ms
T
C
= 25_C
T
C
= 175_C
I
F
= 100 A, dI
F
/dt = 200 A/ms
T
C
= 25_C
T
C
= 175_C
Min
−
−
−
Typ
1.68
1.45
96
Max
2.1
−
−
mJ
ns
−
−
−
−
62
251
164
2736
−
−
nC
−
−
Unit
V
E
rec
t
rr
Reverse Recovery Energy
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Pare Number
FGY100T65SCDT
Top Mark
FGY100T65SCDT
Package
TO−247H03
Packing Method
Tube
Reel Size
−
Tape Width
−
Quantity
30
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FGY100T65SCDT
TYPICAL PERFORMANCE CHARACTERISTICS
300
250
T
C
= 25 C
o
20V
15V
12V
10V
300
250
T
C
= 175 C
o
20V
15V
12V
Collector Current, I
C
[A]
200
150
100
V
GE
= 8V
Collector Current, I
C
[A]
200
10V
150
100
50
0
V
GE
= 8V
50
0
0
1
2
3
4
5
6
0
Collector−Emitter Voltage, V
CE
[V]
1
2
3
4
5
Collector−Emitter Voltage, V
CE
[V]
6
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
250
4
Collector Current, I
C
[A]
T
C
= 25 C
o
200
150
100
50
0
0
T
C
= 175 C
o
Collector−Emitter Voltage, V
CE
[V]
Common Emitter
V
GE
= 15V
Common Emitter
V
GE
= 15V
3
200A
2
100A
I
C
= 50A
1
2
3
4
5
1
−100
−50
0
50
100
150
o
200
Collector−Emitter Voltage, V
CE
[V]
Collector−Emitter Case Temperature, T
C
[ C]
Figure 3. Typical Saturation Voltage
Characteristics
20
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
Common Emitter
Collector−Emitter Voltage
,
V
CE
[V]
Collector−Emitter Voltage, V
CE
[V]
T
C
= 25 C
o
T
C
= 175 C
o
16
16
12
100A
12
100A
8
I
C
= 50A
200A
8
I
C
= 50A
200A
4
4
0
0
4
8
12
16
20
4
Gate−Emitter Voltage, V
GE
[V]
8
12
16
Gate−Emitter Voltage, V
GE
[V]
20
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
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FGY100T65SCDT
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
10000
15
Common Emitter
Gate−Emitter Voltage, V
GE
[V]
C
ies
T
C
= 25 C
o
12
V
CC
= 200V
300V
400V
Capacitance [pF]
1000
C
oes
9
100
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25 C
o
C
res
6
3
10
1
10
0
30
0
40
80
120
160
200
Collector−Emitter Voltage, V
CE
[V]
Gate Charge, Q
g
[nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 100A
1000
Switching Time [ns]
T
C
= 175 C
o
t
r
Switching Time [ns]
T
C
= 25 C
o
t
d(off)
t
f
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 100A
T
C
= 25 C
T
C
= 175 C
o
o
100
t
d(on)
100
50
0
10
20
30
40
50
0
Gate Resistance, R
G
[
W
]
10
20
30
40
Gate Resistance, R
G
[
W
]
50
Figure 9. Turn-on Characteristics vs. Gate
Resistance
30
Figure 10. Turn-off Characteristics vs. Gate
Resistance
1000
E
on
Switching Loss [mJ]
10
Switching Time [ns]
t
r
100
t
d(on)
Common Emitter
V
GE
= 15V, R
G
= 4.7
W
T
C
= 25 C
T
C
= 175 C
o
o
E
off
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 100A
T
C
= 25 C
T
C
= 175 C
o
o
1
10
0
10
20
30
40
Gate Resistance, R
G
[
W
]
50
0
50
100
150
200
Collector Current, I
C
[A]
Figure 11. Switching Loss vs. Gate
Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
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