PLASTIC INFRARED
LIGHT EMITTING DIODE
QED522
PACKAGE DIMENSIONS
0.190 (4.83)
0.178 (4.52)
QED523
REFERENCE
SURFACE
0.220 (5.59)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
Ø 0.215 (5.46)
NOM
SCHEMATIC
45°
0.020 (0.51)
SQ. (2X)
ANODE
R 0.022 (0.56)
CATHODE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
DESCRIPTION
The QED522/523 is an 880 nm AlGaAs LED encapsulated in a clear, peach tinted, plastic TO-46 package.
FEATURES
•
•
•
•
•
•
•
λ
= 880 nm
Chip material = AlGaAs
Package type: Plastic TO-46
Matched Photosensor: QSD722/723/724
Narrow Emission Angle, 20°
High Output Power
Package material and color: clear, peach tinted, plastic
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
6/13/02
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED522
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
NOTES:
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing
.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Rating
-40 to + 100
-40 to + 100
240 for 5 sec
260 for 10 sec
100
5
200
Unit
°C
°C
°C
°C
mA
V
mW
QED523
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
Parameter
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QEC522
Radiant Intensity QEC523
Rise Time
Fall Time
Test Conditions
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA
Symbol
λ
PE
2
Θ
1/2
V
F
I
R
I
E
I
E
t
r
t
f
Min
—
—
—
—
20
40
—
—
Typ
880
20
—
—
—
—
800
800
Max
—
—
1.8
10
80
—
—
—
Units
nm
Deg.
V
µA
mW/sr
mW/sr
ns
ns
© 2002 Fairchild Semiconductor Corporation
Page 2 of 4
6/13/02
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED522
Fig. 1 Normalized Radiant Intensity vs. Forward Current
I
e
- NORMALIZED RADIANT INTENSITY
10
Normalized to:
I
F
= 100 mA Pulsed
t
pw
= 100
µs
Duty Cycle = 0.1 %
T
A
= 25°C
2.0
I
F
= 50 mA
QED523
Fig. 2 Forward Voltage vs. Ambient Temperature
V
F
- FORWARD VOLTAGE (V)
I
F
= 100 mA
1.5
1
0.1
1.0
I
F
= 20 mA
I
F
= 10 mA
0.01
0.5
Normalized to:
I
F
Pulsed
t
pw
= 100
µs
Duty Cycle = 0.1 %
-20
0
20
40
60
80
100
0.001
1
10
100
1000
0.0
-40
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 3 Normalized Radiant Intensity vs. Wavelength
1.0
Fig. 4 Radiation Diagram
110
120
130
140
100
90
80
70
60
50
40
30
20
10
0
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
NORMALIZED RADIANT INTENSITY
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
180
775
800
825
850
875
900
925
950
150
160
170
λ(nm)
© 2002 Fairchild Semiconductor Corporation
Page 3 of 4
6/13/02
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED522
QED523
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2002 Fairchild Semiconductor Corporation
Page 4 of 4
6/13/02
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