TXDV 408 ---> 808
ALTERNISTORS
.
.
.
FEATURES
VERY HIGH COMMUTATION : > 28 A/ms
(400Hz)
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
dV/dt : 500 V/µs min
DESCRIPTION
The TXDV 408 ---> 808 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
Parameter
A1
A2
G
TO220AB
(Plastic)
Value
Tc = 90
°C
8
Unit
A
ITSM
tp = 2.5 ms
tp = 8.3 ms
tp = 10 ms
115
85
80
32
20
100
- 40 to + 150
- 40 to + 125
260
A
I2t
dI/dt
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
A2s
A/µs
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
°C
°C
°C
Symbol
Parameter
408
TXDV
608
600
808
800
Unit
VDRM
VRRM
March 1995
Repetitive peak off-state voltage
Tj = 125
°C
400
V
1/5
TXDV 408 ---> 808
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
Parameter
Value
60
4
3
Unit
°C/W
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IGM = 4A (tp = 20
µs)
VGM = 16V (tp = 20
µs).
ELECTRICAL CHARACTERISTICS
Symbol
IGT
VGT
VGD
tgt
IL
VD=12V
VD=12V
Test Conditions
(DC) RL=33Ω
(DC) RL=33Ω
Tj=25°C
Tj=25°C
Tj=110°C
Tj=25°C
Tj=25°C
Quadrant
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
IH *
VTM *
IDRM
IRRM
dV/dt *
IT= 500mA gate open
ITM= 11A tp= 380µs
VDRM Rated
VRRM Rated
Linear slope up to VD=67%VDRM
gate open
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
Value
MAX
MAX
MIN
TYP
TYP
100
1.5
0.2
2.5
100
200
MAX
MAX
MAX
MAX
MIN
100
1.8
0.01
2
500
Unit
mA
V
V
µs
mA
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
mA
V
mA
V/µs
(dI/dt)c *
Tj=110°C
MIN
7
28
A/ms
2/5
TXDV 408 ---> 808
Fig.1 :
Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
P (W)
14
180
O
P(W)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
= 90
= 60
= 30
o
o
o
Tcase (
o
C)
Rth = 0
o
C/W
o
2 C/W
o
4 C/W
6
o
C/W
-85
-90
-95
-100
-105
= 180
= 120
o
o
12
10
8
6
-110
4
-115
Tamb ( C)
o
I
T(RMS)
(A)
6
7
8
2
0
0
20
40
60
80
100
120
-120
-125
140
Fig.3 :
RMS on-state current versus case temperature.
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
T(RMS)
10
I
(A)
8
6
= 180
o
Zth(j-c)
0.1
Zth(j-a)
4
2
Tcase(
o
C)
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
tp(s)
1E+2 5E+2
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 :
Non Repetitive surge peak on-state current
versus number of cycles.
3/5
TXDV 408 ---> 808
Fig.7 :
Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10ms, and
corresponding value of I2t.
Fig.8 :
On-state characteristics (maximum values).
Fig.9 :
Safe operating area.
4/5
TXDV 408 ---> 808
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
G
I
J
H
D
B
F
O
P
L
C
M
=
N
=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.20
10.50
0.401
0.413
14.23
15.87
0.560
0.625
12.70
14.70
0.500
0.579
5.85
6.85
0.230
0.270
4.50
0.178
2.54
3.00
0.100
0.119
4.48
4.82
0.176
0.190
3.55
4.00
0.140
0.158
1.15
1.39
0.045
0.055
0.35
0.65
0.013
0.026
2.10
2.70
0.082
0.107
4.58
5.58
0.18
0.22
0.80
1.20
0.031
0.048
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
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