TXN/TYN 0512 --->
TXN/TYN 1012
SCR
.
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
TXN Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high per-
formance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
TXN
TYN
TXN
TYN
Tc=80°C
Tc=90°C
Tc=80°C
Tc=90°C
tp=8.3 ms
tp=10 ms
I2 t
dI/dt
Tstg
Tj
Tl
tp=10 ms
Value
12
8
125
120
72
100
- 40 to + 150
- 40 to + 125
260
A2s
A/µs
°C
°C
°C
Unit
A
A
A
K
A
G
TO220AB
(Plastic)
Symbol
Parameter
0512
112
100
212
200
TYN/TXN
412
400
612
600
812
800
1012
1000
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
50
V
April 1995
1/5
TXN/TYN 0512 ---> TXN/TYN 1012
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
TXN
TYN
Parameter
Value
60
3.5
2.5
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IFGM = 4A (tp = 20
µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
IGT
VGT
VGD
tgt
VD =12V
VD =12V
Test Conditions
(DC) R L=33Ω
(DC) R L=33Ω
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
MAX
MAX
MIN
TYP
Value
15
1.5
0.2
2
Unit
mA
V
V
µs
mA
mA
V
mA
VD =VDRM RL=3.3kΩ
VD =VDRM IG = 40mA
dIG/dt = 0.5A/µs
IG= 1.2 IGT
IT= 100mA
gate open
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 125°C
Tj= 125°C
Tj= 125°C
TYP
MAX
MAX
MAX
50
30
1.6
0.01
3
ITM= 24A tp= 380µs
VDRM
VRRM
Rated
Rated
Linear slope up to VD=67%VDRM
gate open
VD =67%VDRM ITM= 24A VR= 25V
dITM/dt=30 A/µs
dVD /dt= 50V/µs
MIN
TYP
200
70
V/µs
µs
2/5
TXN/TYN 0512 ---> TXN/TYN 1012
Fig.1 :
Maximum average power dissipation versus
average on-state current (TXN).
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (TXN).
Fig.3 :
Maximum average power dissipation versus
average on-state current (TYN).
Fig.4 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (TYN).
Fig.5 :
Average
temperature (TXN).
on-state
current
versus
case
Fig.6 :
Average
temperature (TYN).
on-state
current
versus
case
3/5
TXN/TYN 0512 ---> TXN/TYN 1012
Fig.7 :
Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Fig.8 :
Relative variation of gate trigger current versus
junction temperature.
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.9 :
Non repetitive surge peak on-state current
versus number of cycles.
Fig.10 :
Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2 t.
Fig.11 :
On-state characteristics (maximum values).
4/5
TXN/TYN 0512 ---> TXN/TYN 1012
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
H
G
J
D
B
I
F
P
O
L
C
M
=N=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.00 10.40 0.393 0.409
15.20 15.90 0.598 0.625
13.00 14.00 0.511 0.551
6.20
6.60 0.244 0.259
3.50
4.20 0.137 0.165
2.65
2.95 0.104 0.116
4.40
4.60 0.173 0.181
3.75
3.85 0.147 0.151
1.23
1.32 0.048 0.051
0.49
0.70 0.019 0.027
2.40
2.72 0.094 0.107
4.80
5.40 0.188 0.212
1.14
1.70 0.044 0.066
0.61
0.88 0.024 0.034
Cooling method : by conduction (method C)
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
