RN4989
TOSHIBA Transistor
Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN4989
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Unit: mm
Equivalent Circuit and Bias Resister Values
R1: 47kΩ
R2: 22kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
15
100
Unit
V
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8 mg (typ.)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−15
−100
Unit
V
V
V
mA
Start of commercial production
1992-10
1
2014-03-01
RN4989
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55
to 150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Total rating
Marking
Equivalent Circuit
(Top View)
2
2014-03-01
RN4989
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 15V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 0.2V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1 MHz
Min
―
―
0.167
70
―
2.2
1.5
―
―
Typ.
―
―
―
―
0.1
―
―
250
3
Max
100
500
0.311
―
0.3
5.8
2.6
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−15V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−10mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−0.2V,
I
C
=
−5mA
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
Min
―
―
−0.167
70
―
−2.2
−1.5
―
―
Typ.
―
―
―
―
−0.1
―
―
200
3
Max
−100
−500
−0.311
―
−0.3
−5.8
−2.6
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circuit
―
―
Test Condition
―
―
Min
32.9
1.92
Typ.
47
2.14
Max
61.1
2.35
Unit
kΩ
―
3
2014-03-01
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