*1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
of the electrical characteristics.
*2: When mounted on glass-epoxy board of 1600mm
2
(copper laminate area 100%).
■Applications
• Secondary stabilized power supply (local power supply)
■Electrical
Characteristics 1 (Low Input Voltage type compatible with low ESR output capacitor)
Ratings
(T
a
=25°C, V
C
=2V, unless otherwise specified)
Unit
max.
*4
Parameter
Input Voltage
Output Voltage
(Reference Voltage for SI-3012KD)
Line Regulation
Load Regulation
Symbol
min.
V
IN
V
O
(V
ADJ
)
Conditions
∆V
OLINE
Conditions
∆V
OLOAD
Conditions
V
DIF
Conditions
Conditions
2.4
*3
1.24
SI-3012KD (Variable type)
typ.
1.28
V
IN
=3.3V, I
O
=10mA
15
V
IN
=3.3 to 8V, I
O
=10mA (V
O
=2.5V)
40
V
IN
=3.3V, I
O
=0 to 1A (V
O
=2.5V)
0.4
I
O
=0.5A (V
O
=2.5V)
0.6
I
O
=1A (V
O
=2.5V)
350
V
IN
=3.3V, I
O
=0A, V
C
=2V, R2=2.4kΩ
1
V
IN
=3.3V, V
C
=0V
±0.3
T
j
=0 to 100°C (V
O
=2.5V)
55
V
IN
=3.3V, f=100 to 120H
Z
, I
O
=0.1A (V
O
=2.5V)
1.1
V
IN
=3.3V
2
0.8
40
V
C
=2V
–5
0
V
C
=0V
–5
2
1.1
max.
*4
SI-3033KD
min.
*3
typ.
3.300
V
IN
=5V, I
O
=10mA
V
V
mV
mV
1.32
3.234
3.366
15
V
IN
=5 to 10V, I
O
=10mA
50
V
IN
=5V, I
O
=0 to 1A
0.4
I
O
=0.5A
0.6
I
O
=1A
350
V
IN
=5V, I
O
=0A,V
C
=2V
1
V
IN
=5V, V
C
=0V
±0.3
T
j
=0 to 100°C
55
V
IN
=5V, f=100 to 120H
Z
, I
O
=0.1A
V
IN
=5V
0.8
40
V
C
=2V
0
V
C
=0V
Dropout Voltage
V
Quiescent Circuit Current
Circuit Current at Output OFF
Temperature Coefficient of
Output Voltage
Ripple Rejection
Overcurrent Protection Starting
Current
*1
Control Voltage (Output ON)
*2
Control Voltage (Output OFF)
V
C
Terminal
Control Current (Output ON)
Control Current (Output OFF)
I
q
Conditions
I
q
(OFF)
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
Conditions
I
S1
Conditions
V
C
, IH
V
C
, IL
I
C
, IH
Conditions
I
C
, IL
Conditions
µ
A
µ
A
mV/°C
dB
A
V
µ
A
µ
A
*1: I
S1
is specified at the 5% drop point of output voltage V
O
under the condition of Output Voltage parameter.
*2: Output is OFF when the output control terminal (V
C
terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*3: Refer to the Dropout Voltage parameter.
*4: V
IN
(max) and I
O
(max) are restricted by the relation P
D
= (V
IN
- V
O
)
×
I
O
. Please calculate these values referring to the Copper laminate area vs. Power dissipation data.
74
ICs
SI-3000KD Series
■Electrical
Characteristics 2 (High Input Voltage Type)
Ratings
Parameter
Input Voltage
Output Voltage
(Reference Voltage V
ADJ
for SI-3010KD)
Line Regulation
Symbol
min.
V
IN
V
O
(V
ADJ
)
Conditions
∆V
OLINE
Conditions
∆V
OLOAD
2.4
*1
0.98
SI-3010KD (Variable type)
typ.
1.00
V
IN
=7V, I
O
=10mA
30
V
IN
=6 to 11V,
I
O
=10mA (V
O
=5V)
75
V
IN
=7V,
I
O
=0 to 1A (V
O
=5V)
0.3
I
O
=0.5A (V
O
=5V)
0.6
I
O
=1A (V
O
=5V)
600
V
IN
=7V, I
O
=0A, V
C
=2V
R2=10kΩ
1
V
IN
=7V, V
C
=0V
±0.5
T
j
=0 to 100°C (V
O
=5V)
75
V
IN
=7V,
f=100 to 120Hz, I
O
=0.1A (V
O
=5V)
1.1
V
IN
=7V
2.0
0.8
40
V
C
=2V
–5
33
I
O
=10mA
0
V
C
=0V
26
–5
2.0
1.1
max.
27
*5
1.02
min.
*1
SI-3050KD
typ.
5.00
V
IN
=7V, I
O
=10mA
30
V
IN
=6 to 11V, I
O
=10mA
75
V
IN
=7V, I
O
=0 to 1A
0.3
I
O
=0.5A
0.6
I
O
=1A
600
V
IN
=7V, I
O
=0A,
V
C
=2V
1
V
IN
=7V, V
C
=0V
±0.5
T
j
=0 to 100°C
75
V
IN
=7V,
f=100 to 120Hz, I
O
=0.1A
V
IN
=7V
0.8
40
V
C
=2V
0
V
C
=0V
I
O
=10mA
max.
15
*5
5.10
Unit
V
V
4.90
mV
Load Regulation
Conditions
V
DIF
mV
Dropout Voltage
Conditions
Conditions
I
q
V
Quiescent Circuit Current
Conditions
I
q
(OFF)
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
µ
A
µ
A
mV/
°C
dB
Circuit Current at Output OFF
Temperature Coefficient of
Output Voltage
Ripple Rejection
Overcurrent Protection Starting Current
*2
*4
Conditions
I
S1
Conditions
V
C
, IH
V
C
, IL
I
C
, IH
Conditions
I
C
, IL
Conditions
V
OVP
Conditions
A
V
Control Voltage (Output ON)
*3
Control Voltage (Output OFF)
*3
V
C
Terminal
Control Current (Output ON)
Control Current (Output OFF)
Input Overvoltage Shutdown
Voltage
µ
A
µ
A
V
*1:
*2:
*3:
*4:
Refer to the Dropout Voltage parameter.
I
s1
is specified at the 5% drop point of output voltage V
O
under the condition of Output Voltage parameter.
Output is OFF when the output control terminal (V
C
terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
SI-3010KD, SI-3050KD, cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
(1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) V
O
adjustment by raising ground voltage
*5: V
IN
(max) and I
O
(max) are restricted by the relation P
D
= (V
IN
- V
O
)
✕
I
O
. Please calculate these values referring to the Copper laminate area vs. Power dissipation data as shown
hereinafter.
■External
Dimensions (TO263-5)
Case temperature
measurement point
(0.40)
±0.2
(unit : mm)
10.0
±0.2
(8.0)
4.5
3-R0.3
±0.2
+0.10
1.3
–0.05
1.2
(15°)
(4.4)
(1.75)
(6.8)
±0.2
9.2±
±0.3
15.3
(3°)
±0.1
0.10
(3°)
±0.15
2.4
(R0.3)
±0.3
±0.2
±0.2
2.0
15.30
±0.3
(0.75)
4.9
0.88
±0.10
(R0.3)
2.54
0 to 6°
(0.5)
±0.1
4.9
±0.2
9.2
±0.2
φ
1.5 Dp:
±0.2
(3°)
(2×R0.45)
Pin Assignment
q
V
C
w
V
IN
e
GND (Common to the rear side of product)
r
V
O
t
Sense
(ADJ for SI-3010KD/3012KD)
Plastic Mold Package Type
Flammability: UL94V-0
Product Mass: Approx. 1.48g
(1.7
±0.25
)
1
2
3
4
9.9
±0.2
0.8
±0.25
(1.7
)
5
(3°)
±0.1
(4.6)
(1.7
±0.25
)
0.8
±0.25
(1.7
)
(3°)
2-R0.3
10.0
±0.02
ICs
75
1-1-4 Linear Regulator ICs
■Block
Diagram
●SI-3010KD/SI-3012KD
V
IN
2
4 V
O
●SI-3033KD/SI-3050KD
V
IN
2
4 Vo
5
V
C
1
-
+
5 ADJ
TSD
V
C
1
-
+
Sense
TSD
REF
3 GND
REF
3 GND
■Typical
Connection Diagram
●SI-3033KD/SI-3050KD
●SI-3010KD/SI-3012KD
D1
*2
*1
D1
*2
R3
*3
*1
V
IN
2
+
V
O
4
+
V
IN
2
+
V
O
4
R1
+
C
IN
V
C
1
sense
GND 5
3
C
O
Load
C
IN
V
C
GND ADJ
1
5
3
C
O
Load
R2
C
IN
: Input capacitor (22
µ
F or larger)
C
O
: Output capacitor
*1: SI-3012KD/3033KD (22
µ
F or larger)
Co has to be a low ESR capacitor such as a ceramic capacitor.
When using the electrolytic capacitor, oscillation may occur at a low temperature.
SI-3010KD/3050KD/ (47
µ
F or larger)
If a low ESR capacitor is used, oscillation may occur.
*2: D1: Reverse bias protection diode
This diode is required for protection against reverse biasing between the input
and output.
(Sanken SJPL-H2 is recommended.)
This diode is not required at V
O
≤
3.3V.
R1, R2: Output voltage setting resistors
The output voltage can be set by connecting R1 and R2 as shown
above.
The recommended value for R2 is 10Ω (24kΩ for SI-3012KD).
R1=(V
O
–V
ADJ
)
÷
(V
ADJ
/R2)
*3: For SI-3010KD, insert R3 in case of setting V
O
to V
O
≤
1.5V.
The recommended value for R3 is 10kΩ.
■Reference
Data
Copper Laminate Area (on Glass-Epoxy Board) vs.
Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
Junction to Ambient Temperature
Thermal Resistance
θ
j-a (°C/W)
50
When Using Glass-Epoxy Board of 40
×
40 mm
45
40
35
30
0
• A higher heat radiation effect can be achieved by enlarging the copper laminate
area connected to the inner frame to which a monolithic ICs is mounted.
• Obtaining the junction temperature
Measure the case temperature T
C
with a thermocouple, etc. Then, substitute
this value in the following formula to obtain the junction temperature.
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