电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SIT1602BC-21-33S-10.000000D

产品描述-20 TO 70C, 3225, 20PPM, 3.3V, 1
产品类别无源元件   
文件大小975KB,共17页
制造商SiTime
标准
下载文档 全文预览

SIT1602BC-21-33S-10.000000D概述

-20 TO 70C, 3225, 20PPM, 3.3V, 1

文档预览

下载PDF文档
SiT1602B
Low Power, Standard Frequency Oscillator
Features
Applications
52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to
SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
52 standard frequencies between
MHz
3.57 MHz and 77.76 MHz
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
45
90%
Frequency Stability
F_stab
Frequency Stability and Aging
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
+25
ppm
supply voltage and load.
+50
ppm
Operating Temperature Range
+70
°C
Extended Commercial
+85
°C
Industrial
Supply Voltage and Current Consumption
1.8
1.98
V
Contact
SiTime
for 1.5V support
2.5
2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
3.63
V
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
4.0
mA
Vdd = 1.8 V. OE = GND, Output in high-Z state
2.6
4.3
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
A
1.4
2.5
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
A
0.6
1.3
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
A
LVCMOS Output Characteristics
1
1.3
55
2
2.5
2
%
ns
ns
ns
Vdd
All Vdds. See Duty Cycle definition in
Figure 3
and
Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
Idd
OE Disable Current
Standby Current
I_OD
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output High Voltage
VOH
Output Low Voltage
VOL
10%
Vdd
Rev 1.04
January 30, 2018
www.sitime.com
大功率白光LED封装技术与发展趋势低热阻封装工艺
对于现有的LED光效水平而言,由于输入电能的80%左右转变成为热量,且LED芯片面积小,因此,芯片散热是LED封装必须解决的关键问题。主要包括芯片布置、封装材料选择(基板材料、热界面材料)与工艺 ......
探路者 LED专区
优良的接地质量一旦下降就隔离!
作者:Thomas Kugelstadt,德州仪器 (TI) 高级应用工程师通过现场总线-收发器系统实现的工业通信通常需要较长的传输线路。设计人员在没有察觉远程总线位置间的接地电位差 (GPD)比较大的情况下要 ......
qwqwqw2088 模拟与混合信号
基于SOC应用的运算放大器IP核设计
基于SOC应用,采用TSMC 0.18μm CMOS工艺,设计实现了一个低电压、高增益的恒跨导轨到轨运算放大器IP核。  该运放采用了一倍电流镜跨导恒定方式和新型的共栅频率补偿技术,比传统结构更加简单 ......
程序天使 模拟电子
液体测量技术:从水到血液
对于许多应用而言,确定液体的成分和质量至关重要。最主要的例子是水,水是世界上最珍贵的原生资源。净水和水过滤技术在全球发挥着重要作用,是人们生活不可或缺的部分。洁净的水资源不断减少, ......
eric_wang 测试/测量
Minimo M2超薄型糖果式手机:娱乐+通信
本帖最后由 jameswangsynnex 于 2015-3-3 19:58 编辑 2006年7月12日消息:马来西亚Fifth Media公司最近推出一款内置视频和音频播放器的超薄型糖果式样的手机。这款GSM/GPRS手机带有LED flash的 ......
lorant 消费电子
求LCD SG12864I的资料
谁有LCD SG12864I的资料? 谢谢!...
tsb64 单片机

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 199  1825  1229  447  630  4  20  35  58  41 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved