d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
S16-1501-Rev. A, 01-Aug-16
Document Number: 66777
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA60DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
V= 30 V, V
DS GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
MIN.
30
-
-
1.1
-
-
-
40
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 10 A
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V = 15 V, V
GS
= 10 V, I
D
= 15 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 15 A
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
18
-6.3
-
-
-
-
-
MAX.
-
-
-
2.2
± 100
1
10
-
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
-
-
0.70
63
87
30
33
47
110
1.2
120
175
-
-
A
V
ns
nC
ns
7650
2320
191
0.022
83
38
18
4.7
75
0.85
15
20
40
10
40
45
50
20
-
-
-
0.044
125
60
-
-
-
1.7
30
40
80
20
80
90
100
40
ns
nC
pF
0.00078 0.00094
0.00105 0.00135
100
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1501-Rev. A, 01-Aug-16
Document Number: 66777
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA60DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
60
I
D
- Drain Current (A)
60
V
GS
= 3 V
40
I
D
- Drain Current (A)
80
Vishay Siliconix
T
C
= 25
°C
40
T
C
= 125
°C
20
20
T
C
= -55
°C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
-
Gate-to-Source
Voltage (V)
3.5
Output Characteristics
0.0016
10 000
Transfer Characteristics
0.0014
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
8000
C
iss
0.0012
V
GS
= 4.5 V
6000
C
oss
4000
0.0010
0.0008
V
GS
= 10 V
0.0006
2000
C
rss
0
0
20
40
60
80
100
0
5
I
D
- Drain Current (A)
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
0.0004
On-Resistance vs. Drain Current
10
I
D
= 15 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 7.5 V
1.6
1.8
I
D
= 20 A
Capacitance
V
GS
= 10 V
1.4
V
GS
= 4.5 V
6
V
DS
= 15 V
4
V
DS
= 24 V
1.2
1.0
2
0.8
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
0.6
-50
-25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
S16-1501-Rev. A, 01-Aug-16
On-Resistance vs. Junction Temperature
Document Number: 66777
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA60DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
2.0
1.8
T
J
= 150
°C
I
S
-
Source
Current (A)
1.6
10
V
GS(th)
(V)
1.4
1.2
I
D
= 250 μA
1.0
0.8
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Vishay Siliconix
T
J
= 25
°C
1
Source-Drain Diode Forward Voltage
0.005
I
D
= 20 A
0.004
R
DS(on)
- On-Resistance (Ω)
80
Threshold Voltage
100
0.002
T
J
= 125
°C
0.001
T
J
= 25
°C
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Power (W)
0.003
60
40
20
0
0.01
0.1
1
10
Time (s)
100
1000
On-Resistance vs. Gate-to-Source Voltage
1000
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
Limited by R
DS(on)
*
I
on
Limited
100
I
D
- Drain Current (A)
100 μs
10
1 ms
10 ms
1
100 ms
1
s
10
s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
0.1
T
A
= 25
°C
Safe Operating Area
S16-1501-Rev. A, 01-Aug-16
Document Number: 66777
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA60DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
250
100
Vishay Siliconix
200
I
D
- Drain Current (A)
80
Package Limited
100
Power (W)
150
60
40
50
20
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Power, Junction-to-Case
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1501-Rev. A, 01-Aug-16
Document Number: 66777
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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