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LTC4441ES8-1#PBF

产品描述IC MOSFET DRIVER N-CH 8-SOIC
产品类别模拟混合信号IC    驱动程序和接口   
文件大小176KB,共7页
制造商Linear ( ADI )
官网地址http://www.analog.com/cn/index.html
标准
下载文档 详细参数 全文预览

LTC4441ES8-1#PBF概述

IC MOSFET DRIVER N-CH 8-SOIC

LTC4441ES8-1#PBF规格参数

参数名称属性值
Brand NameLinear Technology
是否Rohs认证符合
厂商名称Linear ( ADI )
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
制造商包装代码S8
Reach Compliance Codecompliant
ECCN代码EAR99
高边驱动器NO
接口集成电路类型BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9025 mm
湿度敏感等级1
功能数量1
端子数量8
最高工作温度70 °C
最低工作温度
标称输出峰值电流6 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源7.5 V
认证状态Not Qualified
座面最大高度1.752 mm
最大供电电压25 V
最小供电电压5 V
标称供电电压7.5 V
电源电压1-最大8 V
电源电压1-分钟5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度3.899 mm
Base Number Matches1

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QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 835
LTC4441, MOSFET DRIVER
LTC4441
DESCRIPTION
Demonstration circuit DC835 is a MOSFET driver circuit
that is designed to facilitate adding a MOSFET driver to
an existing design.
Demonstration circuit DC835 is small and allows the
MOSFET driver LTC4441 to be added to an existing de-
sign in order to evaluate the performance. The board has
a ground strip along one side that can be directly sol-
dered to source pins of an SO-8 or similar MOSFET. This
assures the MOSFET driver will be most effective due to
low connection inductance between it’s output and
MOSFET gate pin.
Demonstration circuit DC835 can be easily modified to
generate different gate drive output voltages by chang-
ing the voltage divider of the internal LDO regulator.
The DC835 has a small circuit footprint. It is a high per-
formance and cost effective solution for driving big
MOSFETs in Telecom, Automotive and Industrial applica-
tions.
Design files for this circuit board are available. Call
the LTC factory.
, LTC and LT are registered trademarks of Linear Technology Corporation.
QUICK START PROCEDURE
Demonstration circuit DC835 is easy to set up to evalu-
ate the performance of the LTC4441. For proper meas-
urement equipment setup refer to Figure 1 and follow
the procedure below:
NOTE:
When
the power dissipation may overheat the part. Please
consult the LTC4441 data sheet for details.
3.
4.
Set the Pulse Generator to 300kHz and turn the pulse
output ON.
Check for the proper output voltage of 6V and wave-
forms as shown in Figure 3.
measuring the input or output voltage wave-
forms, care must be taken to minimize the length of the
oscilloscope probe ground lead. Measure the input or
output voltage waveforms by connecting the probe tip
directly across the PWM INPUT or G1 output and GND
terminals as shown in Figure 2.
With power off, connect the input power supply to Vin
and GND.
Turn the input power source on and slowly increase
the input voltage. Be careful not to exceed 24V.
NOTE:
PROGRAMMING GATE OUTPUT VOLTAGE
Changing resistor R8 can program the output voltage at
the OUT pin of the LTC4441. Do not change the value of
resistor R2. The 330kohm value is required for stability
of the internal LDO regulator. For more information,
please refer to the LTC4441 data sheet.
1.
2.
Higher input voltage will cause higher power
dissipation in the LTC4441 LDO regulator. If very big
MOSFETs are used and switching frequency is high
1
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