VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt
®
FEATURES
• State of the art low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
2
3
1
1
2
3
• Low leakage current
• Designed and qualified
JEDEC
®
-JESD 47
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
according
to
TO-263AB (D
2
PAK)
Base
cathode
2
TO-262AA
2
DESCRIPTION / APPLICATIONS
State of the art, ultralow V
F
, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
1
N/C
3
Anode
1
N/C
3
Anode
VS-ETL1506SHM3
VS-ETL1506-1HM3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
(typ.)
t
rr
(typ.)
T
J
max.
Diode variation
TO-263AB (D
2
PAK), TO-262AA
15 A
600 V
0.85 V
60 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 152 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
15
200
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
0.99
0.85
0.01
6
12
8.0
MAX.
-
1.07
0.91
15
100
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 04-Jul-17
Document Number: 95868
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
60
185
210
290
20
26
2.2
4.0
MAX.
110
270
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK modified
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
1.3
-
0.5
2.0
0.07
-
MAX.
175
1.51
70
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
ETL1506SH
ETL1506-1H
I
F
- Instantaneous Forward Current (A)
100
100
175 °C
I
R
- Reverse Current (μA)
10
150 °C
T
J
= 175 °C
1
0.1
0.01
0.001
0.0001
100
125 °C
100 °C
75 °C
50 °C
25 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 04-Jul-17
Document Number: 95868
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
20
RMS Limit
170
Average Power Loss (W)
15
160
DC
150
10
5
140
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
130
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 04-Jul-17
Document Number: 95868
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
6
5
400
350
300
I
F
= 15 A, 125 °C
4
I
F
= 15 A, 125 °C
t
rr
(ns)
250
200
I
F
= 15 A, 25 °C
150
typical value
100
100
1000
Q
rr
(μC)
3
I
F
= 15 A, 25 °C
2
1
typical value
0
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 04-Jul-17
Document Number: 95868
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
-
-
-
-
-
E
2
T
3
L
4
15
5
06
6
S
7
TRL
8
H
9
M3
10
Vishay Semiconductors product
Circuit configuration
E = single diode
T = TO-220
L = ultrafast recovery time
Current code (15 = 15 A)
6
7
8
-
-
-
Voltage code (06 = 600 V)
• S = D
2
PAK
• -1 = TO-262
• None = tube (50 pieces)
• TRL = tape and reel (left oriented, for D
2
PAK package)
• TRR = tape and reel (right oriented, for D
2
PAK package)
9
10
-
-
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-ETL1506SHM3
VS-ETL1506-1HM3
VS-ETL1506STRRHM3
VS-ETL1506STRLHM3
QUANTITY PER TUBE
50
50
800
800
MINIMUM ORDER QUANTITY
1000
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
TO-263AB (D
2
PAK)
TO-262AA
TO-263AB (D
2
PAK)
TO-262AA
TO-263AB (D
2
PAK)
www.vishay.com/doc?95046
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
Part marking information
Packaging information
Revision: 04-Jul-17
Document Number: 95868
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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