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US1B

产品描述1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
产品类别半导体    分立半导体   
文件大小44KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
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US1B概述

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

1 A, 100 V, 硅, 信号二极管, DO-214交流

US1B规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述塑料, SMA, 2 PIN
状态DISCONTINUED
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层锡 铅
端子位置
包装材料塑料/环氧树脂
结构单一的
二极管元件材料
二极管类型信号二极管
反向恢复时间最大0.0500 us
最大重复峰值反向电压100 V
最大平均正向电流1 A

文档预览

下载PDF文档
WTE
POWER SEMICONDUCTORS
US1A – US1K
Pb
1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
A
Ultra-Fast Recovery Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G

E
SMA/DO-214AC
Dim
Min
Max
2.50
2.90
A
4.00
4.60
B
1.20
1.60
C
0.152
0.305
D
4.80
5.28
E
2.00
2.44
F
0.051
0.203
G
0.76
1.52
H
All Dimensions in mm
D
Mechanical Data
!
!
!
!
!
!
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
US1A
@T
A
=25°C unless otherwise specified
US1B
US1D
US1G
US1J
US1K
Unit
50
35
100
70
200
140
1.0
400
280
600
420
800
560
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
50
1.0
30
1.4
10
500
75
15
30
-50 to +150
100
1.7
A
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
US1A – US1K
1 of 4
© 2006 Won-Top Electronics

US1B相似产品对比

US1B US1D-T3 US1A_06 US1K US1D US1G US1J
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE

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