US1A Thru US1M
Surface Mount Ultra Fast Rectifiers
REVERSE VOLTAGE
50 TO 1000 VOLTS
FORWARD CURRENT
1.0 AMPERE
Features:
* For Surface Mount Application
* Glass Passivated Chip
* Low Reverse Leakage Current
* Low Forward Voltage Drop And High Current Capability
* Ultra Fast Switching For High Efficiency
* Plastic Meterial Has UL Flammability Classification 94V-0
Mechanical Data
* Case : Molded Plastic
* Terminals: Solder Plated Terminal-Solderable per MIL-STD-202, Method 208
* Polarity :Indicated by cathode band
* Weight : 0.002 Ounce ,0.064 grams
SMA(DO-214AC)
SMA Outline Dimension
B
Unit:mm
A
C
D
J
H
E
G
Dim
A
B
C
D
E
G
H
J
SMA
Min
2.20
4.00
1.27
0.15
4.48
0.10
0.76
1.70
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
WEITRON
US1A Thru US1M
Maximum Ratings and Electrical Characteristics
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @T
T
=75 C
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
Maximum DC Reverse Current @T
A
=25 C
At Rated DC Blocking Voltage @T
A
=100 C
Maximun Reverse Recocery Time(Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
US1A US1B US1D US1G US1J US1K US1M Unit
VRRM
VRMS
VDC
IF(AV)
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
A
IFSM
VF
IR
Trr
CJ
30
A
1.0
5.0
100
50
20
75
1.30
1.70
V
uA
100
10
nS
PF
C/W
R
JT
TJ
TSTG
-55 to+150
-55 to+150
C
C
NOTES:1.Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I
RR
=0.25A.
2.Measured at 1.0MHz applied reverse voltage of 4.0V DC.
3.Unit Mounted on PC board with 5.0 mm
2
(0.03mm thick) land areas.
WEITRON
US1A thru US1M
I
F
, INS TANTANE OUS F OR WAR D C UR R E NT (A)
10
I
(AV)
, AVE R AG E R E C T IF IE D C UR R E NT (A)
1.0
US 1A - US 1D
US 1G
1.0
US 1J - US 1M
0.5
0.1
0
25
50
75
100
125
150
0.01
0
0.4
0.8
1.2
1.6
2.0
V
F
, INS TANTANE OUS F OR WAR D V OLTAG E (V )
F IG .2 Tpical F orward C haracteris tics
1000
T
T
, T E R MINAL T E MP E R AT UR E (°C )
F IG .1 F orward C urrent Deratin C urve
I
F S M
, P E AK F OR WAR D S UR G E C UR R E NT (A)
40
S ingle Half S ine-Wave
(J E DE C Method)
30
100
T
j
= 100°C
10
20
1.0
T
j
= 25°C
10
T
j
= 150°C
0.1
0
1
10
100
NUMB E R OF C Y C LE S AT 60Hz
F IG . 3 F orward S urge C urrent Derating C urve
t
rr
+0.5A
0.01
0
20
40
60
80
100
120
140
P E R C E NT OF R AT E D P E AK R E V E R S E V OLTAG E (% )
F IG. . 4 T ypical R evers e C haracteris tics
0A
-0.25A
(+)
50V DC
Approx
Device
Under
Tes t
(-)
P uls e
G enerator
(Note 2)
Os cillos cope
(Note 1)
(-)
(+)
-1.0A
S et time bas e for 50/100 ns /cm
F IG. . 5 R evers e R ecovery Time C haracteris tic and Tes t C ircuit
WEITRON
http://www.weitron.com.tw
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