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74AXP1G00GMH

产品描述IC GATE NAND 1CH 2-INP 6XSON
产品类别半导体    逻辑   
文件大小772KB,共17页
制造商Nexperia
官网地址https://www.nexperia.com
标准
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74AXP1G00GMH概述

IC GATE NAND 1CH 2-INP 6XSON

74AXP1G00GMH规格参数

参数名称属性值
逻辑类型与非门
电路数1
输入数2
电压 - 电源0.7 V ~ 2.75 V
电流 - 静态(最大值)600nA
电流 - 输出高,低8mA,8mA
逻辑电平 - 低0.7V
逻辑电平 - 高1.6V
不同 V,最大 CL 时的最大传播延迟3ns @ 2.5V,5pF
工作温度-40°C ~ 85°C
安装类型表面贴装
供应商器件封装6-XSON,SOT886(1.45x1)
封装/外壳6-XFDFN

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74AXP1G00
Low-power 2-input NAND gate
Rev. 1 — 24 September 2014
Product data sheet
1. General description
The 74AXP1G00 is a single 2-input NAND gate.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall
times.
This device ensures very low static and dynamic power consumption across the entire
V
CC
range from 0.7 V to 2.75 V. It is fully specified for partial power down applications
using I
OFF
. The I
OFF
circuitry disables the output, preventing the potentially damaging
backflow current through the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.7 V to 2.75 V
Low input capacitance; C
I
= 0.5 pF (typical)
Low output capacitance; C
O
= 1.0 pF (typical)
Low dynamic power consumption; C
PD
= 2.5 pF at V
CC
= 1.2 V (typical)
Low static power consumption; I
CC
= 0.6
A
(85
C
maximum)
High noise immunity
Complies with JEDEC standard:
JESD8-12A.01 (1.1 V to 1.3 V)
JESD8-11A.01 (1.4 V to 1.6 V)
JESD8-7A (1.65 V to 1.95 V)
JESD8-5A.01 (2.3 V to 2.7 V)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM JESD22-C101E exceeds 1000 V
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 2.75 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial Power-down mode operation
Multiple package options
Specified from
40 C
to +85
C

74AXP1G00GMH相似产品对比

74AXP1G00GMH 935304081125 935304079125 935304078125 935304077125 74AXP1G00GSH 74AXP1G00GNH 74AXP1G00GXH
描述 IC GATE NAND 1CH 2-INP 6XSON IC GATE NAND SGL 2INPUT 5X2SON IC GATE NAND SGL 2INPUT 6XSON IC GATE NAND SGL 2INPUT 6XSON IC GATE NAND SGL 2INPUT 6XSON IC GATE NAND 1CH 2-INP 6XSON IC GATE NAND 1CH 2-INP 6XSON IC GATE NAND 1CH 2-INP 5X2SON
包装说明 - 0.80 X 0.80 MM, 0.35 MM HEIGHT, PLASTIC, SOT-1226, X2SON-5 VSON, SON, 1 X 1.45 MM, 0.50 MM HEIGHT, 0.50 MM PITCH, PLASTIC, MO-252, SOT-886, XSON-6 - - SON,
Reach Compliance Code - compliant compliant compliant compliant - - compliant
系列 - AXP AXP AXP AXP - - AXP
JESD-30 代码 - S-PDSO-N5 S-PDSO-N6 R-PDSO-N6 R-PDSO-N6 - - S-PDSO-N5
长度 - 0.8 mm 1 mm 1 mm 1.45 mm - - 0.8 mm
逻辑集成电路类型 - NAND GATE NAND GATE NAND GATE NAND GATE - - NAND GATE
湿度敏感等级 - 1 1 1 1 - - 1
功能数量 - 1 1 1 1 - - 1
输入次数 - 2 2 2 2 - - 2
端子数量 - 5 6 6 6 - - 5
最高工作温度 - 85 °C 85 °C 85 °C 85 °C - - 85 °C
最低工作温度 - -40 °C -40 °C -40 °C -40 °C - - -40 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
封装代码 - SON VSON SON VSON - - SON
封装形状 - SQUARE SQUARE RECTANGULAR RECTANGULAR - - SQUARE
封装形式 - SMALL OUTLINE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE, VERY THIN PROFILE - - SMALL OUTLINE
传播延迟(tpd) - 120 ns 120 ns 120 ns 120 ns - - 120 ns
座面最大高度 - 0.35 mm 0.35 mm 0.35 mm 0.5 mm - - 0.35 mm
最大供电电压 (Vsup) - 2.75 V 2.75 V 2.75 V 2.75 V - - 2.75 V
最小供电电压 (Vsup) - 0.7 V 0.7 V 0.7 V 0.7 V - - 0.7 V
标称供电电压 (Vsup) - 1.2 V 1.2 V 1.2 V 1.2 V - - 1.2 V
表面贴装 - YES YES YES YES - - YES
技术 - CMOS CMOS CMOS CMOS - - CMOS
温度等级 - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL - - INDUSTRIAL
端子形式 - NO LEAD NO LEAD NO LEAD NO LEAD - - NO LEAD
端子节距 - 0.48 mm 0.35 mm 0.3 mm 0.5 mm - - 0.48 mm
端子位置 - DUAL DUAL DUAL DUAL - - DUAL
宽度 - 0.8 mm 1 mm 0.9 mm 1 mm - - 0.8 mm

 
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