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HN1D02F(TE85L,F)

产品描述DIODE ARRAY GP 80V 100MA SM6
产品类别分立半导体    二极管   
文件大小197KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN1D02F(TE85L,F)概述

DIODE ARRAY GP 80V 100MA SM6

HN1D02F(TE85L,F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
最高工作温度125 °C
最低工作温度-55 °C
最大功率耗散0.3 W
最大重复峰值反向电压85 V
最大反向电流0.5 µA
最大反向恢复时间0.004 µs
反向测试电压80 V
表面贴装YES
Base Number Matches1

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HN1D02F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D02F
Ultra-High-Speed Switching Applications
The HN1D02F is composed of two (2) cathode common units.
Low forward voltage
Small total capacitance
: V
F
(3)
= 0.90 V (typ.)
: C
T
= 0.9 pF (typ.)
Fast reverse recovery time : t
rr
= 1.6 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300 (*)
100 (*)
2 (*)
300
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are
used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single
diode.
JEDEC
JEITA
TOSHIBA
1-3K1B
Weight: 0.015 g (typ.)
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1 MHz
I
F
=10 mA (Fig. 1)
Min
Typ.
0.60
0.72
0.90
0.9
1.6
Max
1.20
0.1
0.5
3.0
4.0
μA
pF
ns
V
Unit
Start of commercial production
1992-05
1
2014-03-01

 
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