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RN1511(TE85L,F)

产品描述TRANS 2NPN PREBIAS 0.3W SMV
产品类别分立半导体    晶体管   
文件大小269KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN1511(TE85L,F)概述

TRANS 2NPN PREBIAS 0.3W SMV

RN1511(TE85L,F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)120
元件数量2
极性/信道类型NPN
最大功率耗散 (Abs)0.3 W
表面贴装YES
晶体管元件材料SILICON

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RN1510,RN1511
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1510, RN1511
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SMV (super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2510 to RN2511
Equivalent Circuit
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
5
100
300
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Equivalent Circuit
(Top View)
*:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1510
RN1511
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
3.29
7
Typ.
0.1
250
3
4.7
10
Max
100
100
700
0.3
6
6.11
13
V
MHz
pF
Unit
nA
nA
Start of commercial production
1988-10
1
2014-03-01

RN1511(TE85L,F)相似产品对比

RN1511(TE85L,F) RN1510(TE85L,F)
描述 TRANS 2NPN PREBIAS 0.3W SMV TRANS 2NPN PREBIAS 0.3W SMV
是否Rohs认证 符合 符合
Reach Compliance Code unknown unknown
最大集电极电流 (IC) 0.1 A 0.1 A
最小直流电流增益 (hFE) 120 120
元件数量 2 2
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.3 W 0.3 W
表面贴装 YES YES
晶体管元件材料 SILICON SILICON

 
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