RN2707JE~RN2709JE
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2707JE, RN2708JE, RN2709JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
•
•
A wide range of resistor values are available for use in various circuit
designs.
Complementary to RN1707JE to RN1709JE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2707JE
RN2708JE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
B
R1
R2
RN2709JE
E
JEDEC
JEITA
TOSHIBA
―
―
2-2P1D
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2707JE
to 2709JE
RN2707JE
Emitter-base voltage
RN2708JE
RN2709JE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2707JE
to 2709JE
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
5
Q1
4
Q2
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Start of commercial production
2000-06
1
2014-03-01
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