Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
Symbol
R
qJA
R
qJT
T
L
Max
156
25
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
/V
RRM
; R
GK
= 1000
W)
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(I
TM
= 2.2 A Peak)
Gate Trigger Current (dc) (Note 3)
(V
AK
= 7 Vdc, R
L
= 100
W)
Gate Trigger Voltage (dc) (Note 3)
(V
AK
= 7 Vdc, R
L
= 100
W)
Gate Non−Trigger Voltage
(V
AK
= V
DRM
, R
L
= 100
W)
Holding Current
(V
AK
= 12 V, R
GK
= 1000
W)
Initiating Current = 200 mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(T
C
= 110°C)
Critical Rate of Rise of On−State Current
(T
C
= 110°C, I
G
= 2 x I
GT
, R
GK
= 1 kW)
2. Pulse Width = 1.0 ms, Duty Cycle
v
1%.
3. R
GK
Current not included in measurement.
dv/dt
di/dt
−
−
25
20
−
−
V/ms
A/ms
T
C
= 25°C
T
C
= −40°C
T
C
= 25°C
T
C
= −40°C
T
C
= 110°C
I
H
T
C
= 25°C
T
C
= −40°C
−
−
2.0
−
5.0
10
mA
V
TM
I
GT
V
GT
V
GD
−
−
−
−
−
0.1
1.2
30
−
−
−
−
1.7
200
500
0.8
1.2
−
V
mA
V
V
I
DRM
, I
RRM
T
C
= 25°C
T
C
= 110°C
−
−
−
−
10
200
mA
mA
Symbol
Min
Typ
Max
Unit
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
www.onsemi.com
2
NYC222, NYC226, NYC228
CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (
°
C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
140
140
120
100
80
60
40
20
0
0
dc
a
= 180°
a
= CONDUCTION ANGLE
0.2
0.4
0.6
0.8
1.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
100
a
= 180°
a
= CONDUCTION
ANGLE
dc
60
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
5.0
3.0
2.0
T
J
= 110°C
25°C
1.0
I T , INSTANTANEOUS ON‐STATE CURRENT (AMP)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
1.0
1.5
2.0
2.5
V
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
www.onsemi.com
3
NYC222, NYC226, NYC228
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1000
2000
5000
1000
Figure 4. Thermal Response
TYPICAL CHARACTERISTICS
0.8
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT GATE TRIGGER CURRENT (
μ
A)
100 110
V
AK
= 7.0 V
R
L
= 100
100
50
30
20
10
5.0
3.0
2.0
1.0
-40
0.7
0.6
0.5
0.4
0.3
-75
-50
-25
0
25
50
75
-20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage
P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Typical Gate Trigger Current
10
I H , HOLDING CURRENT (mA)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
dc
30°
60°
90°
120
°
180°
V
AK
= 12 V
R
L
= 100
W
5.0
2.0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.0
-40
-20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMPS)
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
www.onsemi.com
4
NYC222, NYC226, NYC228
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
−
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
4
H
E
1
2
3
E
b
e1
e
q
L
C
A
0.08 (0003)
A1
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H
E
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
L1
0°
10°
0°
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
STYLE 11:
PIN 1. MT 1
10°
2. MT 2
3. GATE
4. MT 2
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
