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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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Team Nexperia
PTVSxU1UPA series
N3
HU
300 W Transient Voltage Suppressor
Rev. 1 — 6 March 2014
Product data sheet
1. Product profile
1.1 General description
300 W unidirectional Transient Voltage Suppressor (TVS) in a DFN2020-3 (SOT1061)
leadless medium power Surface-Mounted Device (SMD) plastic package, designed for
transient overvoltage protection.
SO
1.2 Features and benefits
Rated peak pulse power: P
PPM
= 300 W
Reverse current: I
RM
= 1 nA
Very low package height: 0.65 mm
Reverse standoff voltage range:
V
RWM
= 7.5 V to 26 V
AEC-Q101 qualified
1.3 Applications
Power supply protection
Industrial application
Power management
1.4 Quick reference data
Table 1.
Symbol
P
PPM
V
RWM
[1]
[2]
Quick reference data
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
[1][2]
Min
-
7.5
Typ
-
-
Max
300
26
Unit
W
V
In accordance with IEC 61643-321 (10/1000
s
current waveform).
Measured from pin 1 and 2 to pin 3.
NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
2. Pinning information
Table 2.
Pin
1 and 2
3
Pinning
Description
anode
cathode
3
3
1, 2
006aab838
Simplified outline
Graphic symbol
1
2
Transparent top view
3. Ordering information
Table 3.
Ordering information
Package
Name
PTVSxU1UPA series
Description
Version
SOT1061
DFN2020-3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals;
body 2
2
0.65 mm
Type number
[1]
[1]
The series consists of 6 types with reverse standoff voltages from 7.5 V to 26 V.
4. Marking
Table 4.
Marking codes
Marking code
CX
CY
CZ
D1
D2
D3
Type number
PTVS7V5U1UPA
PTVS10VU1UPA
PTVS12VU1UPA
PTVS15VU1UPA
PTVS18VU1UPA
PTVS26VU1UPA
PTVSXU1UPA_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 March 2014
2 of 12
NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
[1][3]
[2][3]
Min
-
-
-
-
55
65
Max
300
3000
150
+150
+150
Unit
W
W
C
C
C
see
Table 8
In accordance with IEC 61643-321 (10/1000
s
current waveform).
In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20
s
current waveform).
Measured from pin 1 and 2 to pin 3.
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
IEC 61000-4-2
(air discharge)
[1]
[2]
[1][2]
Min
-
-
Max
30
30
Unit
kV
kV
[1][2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Measured from pin 1 and 2 to pin 3.
PTVSXU1UPA_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 March 2014
3 of 12
NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
150
I
PP
(%)
100
100 % I
PP
; 10
μs
006aab319
120
I
PP
(%)
80
e
-t
100 % I
PP
; 8 µs
001aaa630
50 % I
PP
; 20 µs
50 % I
PP
; 1000
μs
50
40
0
0
1.0
2.0
3.0
t
p
(ms)
4.0
0
0
10
20
30
t
p
(ms)
40
Fig 1.
10/1000
s
pulse waveform according to
IEC 61643-321
Fig 2.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
001aaa631
I
PP
100 %
90 %
10 %
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig 3.
ESD pulse waveform according to IEC 61000-4-2
PTVSXU1UPA_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 March 2014
4 of 12
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