RN2107ACT~RN2109ACT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107ACT, RN2108ACT, RN2109ACT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Top View
0.25±0.03
Unit: mm
•
Extra small package (CST3) is applicable for extra high density
fabrication.
•
Incorporating a bias resistor into a transistor reduces parts count.
1.0±0.05
0.6±0.05
0.5±0.03
0.25±0.03
•
Complementary to RN1107ACT to RN1109ACT
１
２
0.35±0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2107ACT
RN2108ACT
RN2109ACT
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.15±0.03
0.65±0.02
•
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
３
0.05±0.03
CST3
JEDEC
JEITA
TOSHIBA
Weight:
B
R1
R2
1.BASE
2.EMITTER
3.COLLECOTR
―
―
2-1J1A
0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2107ACT to RN2109ACT
RN2107ACT
Emitter-base voltage
RN2108ACT
RN2109ACT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107ACT to RN2109ACT
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−80
100*
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
* : Mounted on FR4 board (10 mm
×
10 mm
×
1 mm)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
2004-08
1
2014-10-21
RN2107ACT~RN2109ACT
IC - VI (ON)
-10000
COLLECTOR CURRENT IC (uA)
(μA)
-100
COLLECTOR CURRENT IC (mA)
RN2107ACT
RN2107ACT
IC - VI (OFF)
COMMON EMITTER
VCE = -0.2V
COMMON EMITTER
VCE = -5V
-10
Ta=100°C
25
-1
-25
-1000
Ta=100°C
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE
VI
(ON) (V)
INPUT VOLTAGE
VI
(OFF) (V)
-100
COLLECTOR CURRENT IC (mA)
RN2108ACT
IC - VI (ON)
-10000
RN2108ACT
IC - VI (OFF)
-10
(μA)
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = -0.2V
COMMON EMITTER
VCE = -5V
Ta=100°C
-1000
Ta=100°C
25
-25
-1
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE
VI
(ON) (V)
INPUT VOLTAGE
VI
(OFF) (V)
-100
COLLECTOR CURRENT IC (mA)
RN2109ACT
IC - VI (ON)
-10000
RN2109ACT
IC - VI (OFF)
-10
Ta=100°C
(μA)
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = -0.2V
COMMON EMITTER
VCE = -5V
-1000
Ta=100°C
25
-25
25
-1
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
INPUT VOLTAGE
VI
(ON) (V)
INPUT VOLTAGE
VI
(OFF) (V)
3
2014-10-21
RN2107ACT~RN2109ACT
RN2107ACT
hFE - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
1000
RN2107ACT
VCE (sat) - IC
DC CURRENT GAIN
hFE
COMMON EMITTER
VCE = -5V
Ta=100°C
COMMON EMITTER
IC / IB = 20
100
-25
25
-0.1
Ta=100°C
-25
25
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT IC (mA)
-100
1000
RN2108ACT
hFE - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
RN2108ACT
VCE (sat) - IC
DC CURRENT GAIN
hFE
COMMON EMITTER
VCE = -5V
Ta=100°C
COMMON EMITTER
IC / IB = 20
100
-25
25
-0.1
Ta=100°C
-25
25
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT IC (mA)
-100
1000
RN2109ACT
hFE- IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
RN2109ACT
VCE (sat) - IC
COMMON EMITTER
VCE = -5V
DC CURRENT GAIN
hFE
COMMON EMITTER
IC / IB = 20
Ta=100°C
100
-25
25
-0.1
Ta=100°C
-25
25
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT IC (mA)
-100
4
2014-10-21
测试/测量
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