RN1112ACT, RN1113ACT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112ACT, RN1113ACT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
•
0.6±0.05
0.5±0.03
Unit: mm
0.25±0.03
１
0.25±0.03
２
•
Complementary to RN2112ACT, RN2113ACT
Equivalent Circuit and Bias Resistor Values
0.35±0.02
0.15±0.03
0.65±0.02
0.05±0.03
•
Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost.
３
1.BASE
CST3
2.EMITTER
3.COLLECOTR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
50
50
5
80
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-1J1A
Weight:0.75 mg (typ.)
Note1: Mounted on FR4 board (10 mm
×
10 mm
×
1 mmt)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
2004-08
1
2014-03-01
RN1112ACT, RN1113ACT
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1112ACT
RN1113ACT
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
120
⎯
⎯
17.6
37.6
Typ.
⎯
⎯
⎯
⎯
0.7
22
47
Max
100
100
700
0.15
⎯
26.4
56.4
V
pF
kΩ
Unit
nA
nA
2
2014-03-01
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