Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 12 V up to 58 V. Typical fast
response times are less than 1.0 picosecond from 0 V to Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Symbol
P
PK
I
FSM
T
J
Value
3000
300
-55 to +150
-55 to +150
Unit
Watts
Amps
°C
°C
T
STG
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Mounted on 5.0 mm
2
(0.03 mm thick) copper pads to each terminal.
8.3 ms Single Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA:
Tel: +36 88 520 390 • Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
**”Q” part number suffix indicates AEC-Q101 compliance.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
SMLJ-Q Transient Voltage Suppressor Diode Series
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Unidirectional Device
Part
Number
Part
Marking
HEEQ
HEGQ
HEKQ
HEMQ
HEPQ
HERQ
HETQ
HEVQ
HEXQ
HEZQ
HFEQ
HFGQ
HFKQ
HFMQ
HFPQ
HFRQ
HFTQ
HFVQ
HFXQ
HFZQ
HGEQ
HGGQ
Bidirectional Device
Part
Number
Part
Marking
IEEQ
IEGQ
IEKQ
IEMQ
IEPQ
IERQ
IETQ
IEVQ
IEXQ
IEZQ
IFEQ
IFGQ
IFKQ
IFMQ
IFPQ
IFRQ
IFTQ
IFVQ
IFXQ
IFZQ
IGEQ
IGGQ
Breakdown Voltage
V
BR
(Volts)
Min.
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
Working
Peak
Reverse
Voltage
V
RWM
(Volts)
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
Maximum
Reverse
Leakage
@ V
RWM
I
R
(μA)
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
Maximum
Reverse
Voltage
@ I
RSM
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
Maximum
Reverse
Surge
Current
150.60
139.40
129.40
123.00
115.40
106.60
102.80
92.60
84.40
77.20
71.20
66.00
62.00
56.20
51.60
46.40
43.20
41.20
38.80
36.40
34.40
32.00
Max.
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
@ I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
RSM
(Volts) I
RSM
(Amps)
SMLJ12A-Q
SMLJ13A-Q
SMLJ14A-Q
SMLJ15A-Q
SMLJ16A-Q
SMLJ17A-Q
SMLJ18A-Q
SMLJ20A-Q
SMLJ22A-Q
SMLJ24A-Q
SMLJ26A-Q
SMLJ28A-Q
SMLJ30A-Q
SMLJ33A-Q
SMLJ36A-Q
SMLJ40A-Q
SMLJ43A-Q
SMLJ45A-Q
SMLJ48A-Q
SMLJ51A-Q
SMLJ54A-Q
SMLJ58A-Q
SMLJ12CA-Q
SMLJ13CA-Q
SMLJ14CA-Q
SMLJ15CA-Q
SMLJ16CA-Q
SMLJ17CA-Q
SMLJ18CA-Q
SMLJ20CA-Q
SMLJ22CA-Q
SMLJ24CA-Q
SMLJ26CA-Q
SMLJ28CA-Q
SMLJ30CA-Q
SMLJ33CA-Q
SMLJ36CA-Q
SMLJ40CA-Q
SMLJ43CA-Q
SMLJ45CA-Q
SMLJ48CA-Q
SMLJ51CA-Q
SMLJ54CA-Q
SMLJ58CA-Q
Notes:
1. Suffix ‘A’ denotes a 5 % tolerance unidirectional device.
2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
SMLJ-Q Transient Voltage Suppressor Diode Series
Performance Graphs
Peak Pulse Power Derating Curve
Peak Pulse Power Derating in Percent of
Peak Power or Current
100
Maximum Non-Repetitive Surge Current
IFSM - Peak Forward Surge Current (Amps)
350
300
250
200
150
100
50
0
1
Pulse Width 8.3 ms
Single Half Sine-Wave
10
Number of Cycles at 60 Hz
100
75
50
25
10 x 1000 Waveform as Defined
by R.E.A.
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Pulse Waveform
TR=10 µs
100
IP, Peak Pulse Current (%)
Peak value (IRSM)
Half value=
IRSM
2
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
TA=25 °C
TP
10 x 1000 waveform
as defined by R.E.A.
Typical Junction Capacitance
100000
10000
Bidirectional
v-0v
CJ - Junction Capacitance (pF)
1000
100
Unidirectional
@ VR
Unidirectional
v-0v
50
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Bidirectional
@ VR
0
0
1.0
2.0
T, Time (ms)
3.0
4.0
1
1
10
100
1000
VBR - Reverse Breakdown Voltage (V)
Pulse Rating Curve
100
Steady State Power Derating Curve
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
10
1.0
TA = 25 °C
Non-repetitive
Pulse Waveform
Shown in Pulse Waveform Graph
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
TP - Pulse Width
Steady State Power Dissipation (W)
PPPM - Peak Pulse Power (kW)
TL - Lead Temperature (°C)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
SMLJ-Q Transient Voltage Suppressor Diode Series
Product Dimensions
A
A
Recommended Footprint
A
a
B
C
B
B
b
C
c
G
D
Dimension
a (Max.)
H
F
C
E
D
b (Min.)
c (Min.)
Dimension
A
B
C
D
E
F
G
H
DIMENSIONS:
SMC
MM
(DO-214AB)
6.60
(INCHES)
- 7.11
(0.260 - 0.280)
5.59 - 6.22
E
(0.220 - 0.245)
2.90 - 3.20
(0.114 - 0.126)
MM
DIMENSIONS:
0.15 - 0.31
(INCHES)
(0.006 - 0.112)
7.75 - 8.13
(0.305 - 0.320)
0.203
MAX.
(0.008)
2.00 - 2.62
(0.079 - 0.103)
0.76 - 1.52
(0.030 - 0.060)
MM
(INCHES)
F
SMC (DO-214AB)
4.69
(0.185)
3.07
(0.121)
1.52
(0.060)
MM
(INCHES)
DIMENSIONS:
Physical Specifications
Case ...........................................Molded plastic per UL Class 94V-0
Polarity....................... Cathode band indicates unidirectional device
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN5-0504N - TVS/Steering Diode Array
SMLJ-Q Transient Voltage Suppressor Diode Series
Packaging Information
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
Index Hole
E
T
120 °
F
W
D2
D1 D
B
P
Trailer
A
Device
C
Leader
End
.......
.......
10 pitches (min.)
.......
.......
.......
.......
.......
.......
10 pitches (min.)
Start
W1
DIMENSIONS:
MM
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
7-Inch Reel
SMC (DO-214AB)
6.0 ± 2.0
(0.236 - 0.079)
8.3 ± 0.20
(0.327 ± 0.008)
2.5 ± 0.20
(0.098 ± 0.008)
1.50 ± 0.10
(0.059 ± 0.004)
50.0
MIN.
(1.969)
13.0 +0.50/-0.20
(0.512 +0.020/-0.008)
1.75 ± 0.10
(0.069 ± 0.004)
7.50 ± 0.10
(0.295 ± 0.004)
8.00 ± 0.10
(0.315 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.10
(0.079 ± 0.004)
0.30 ± 0.10
(0.012 ± 0.004)
16.00 ± 0.30
(0.630 ± 0.012)
22.4
MAX.
(0.882)
13-Inch Reel
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
178
(7.008)
330
(12.992)
500
3000
REV. 02/18
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
我在烧写VxWorks镜像时，烧写完成后，启动就出现提示：
muxDevload failed for device entry 0
Failed to attach to END device
Attaching interface lo0...done
wdb Config：error configu ......
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