PTVA035002EV
Thermally-Enhanced High Power RF LDMOS FET
500 W, 50 V, 390 – 450 MHz
Description
The PTVA035002EV LDMOS FET is designed for use in power ampli-
fier applications in the 390 MHz to 450 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA035002EV
Package H-36275-4
450 MHz, V
D
= 50 V, I
DQ
= 0.5 A,
12 µsec pulse width, 10% duty cycle
22
20
85
Pulsed CW Performance
Features
•
•
•
•
•
•
Unmatched input and output
High gain and efficiency
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS-compliant
Capable of withstanding a 13:1 load
mismatch at 57 dBm under pulsed
conditions: 12 µsec pulse width, 10% duty cycle
Gain (dB)
18
16
14
12
10
48
Gain
65
55
Efficiency
45
35
a035002 gr 1
50
52
54
56
58
60
25
Output Power (dBm)
RF Characteristics
Pulsed CW Class AB Characteristics
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 0.5 A, P
OUT
= 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
Drain Efficiency (%)
75
Symbol
G
ps
Min
—
—
Typ
18
64
Max
—
—
Unit
dB
%
h
D
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 05, 2013-07-10
PTVA035002EV
RF Characteristics
Pulsed CW Characteristics
(tested in Infineon test fixture)
V
DD
= 50 V, V
GS
= 2.9 V, I
DQ
= 0.0 A, P
OUT
= 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
Symbol
G
ps
Min
14.75
63
Typ
15.5
66
Max
—
—
Unit
dB
%
h
D
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
105
—
—
—
—
—
Typ
—
—
—
0.1
3.70
—
Max
—
1.0
10.0
—
—
1.0
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 50 V, I
DQ
= 600 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 300 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
105
–6 to +12
200
–65 to +150
0.20
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTVA035002EV V1
Order Code
PTVA035002EVV1XWSA1
Package Description
H-36275-4, bolt-down
Shipping
Tray
Data Sheet
2 of 8
Rev. 05, 2013-07-10
PTVA035002EV
Typical Performance
(data taken in production test fixture)
Power Sweep, Pulsed CW
V
DD
= 50 V, V
G
= 2.9 V, 12 µsec pulse width, 10%
duty cycle, power optimized
20
18
V
DD
= 50 V, V
G
= 2.9 V, efficiency optimized
20
Power Sweep, Pulsed CW
12 µsec pulse width, 10% duty cycle
80
80
Drain Eff
ficiency (%)
Gain (dB)
16
14
12
10
8
48
50
60
50
Gain (dB)
16
14
12
10
8
48
50
52
60
Efficiency
50
40
Efficiency
52
54
450 MHz
420 MHz
390 MHz
a035002 gr 3-1
40
30
58
60
56
20
450 MHz
420 MHz
390 MHz
a035002ev_gr3-2
30
56
58
60
54
20
Output Power (dBm)
Output Power (dBm)
V
GG
= 2.9 V, 450 MHz, 2 µsec pulse width,
10% duty cycle, for selected V
DD
20
18
V
DD
= 50 V
V
DD
= 40 V
V
DD
= 30 V
80
Pulsed CW Performance
V
DD
= 50 V, 450 MHz,
12 µsec pulse width, 10% duty cycle,
series show I
DQ
Pulsed CW Gain
Gain
Gain (dB)
Gain (dB)
16
14
12
10
8
45
47
60
50
40
Drain Efficiency (%)
70
20
1.5 A
0.5 A
16
I
DQ
=
0.02 A
12
Efficiency
a035002 gr 3
30
53
55
57
59
20
8
a03500 gr 3-4
49
51
48
50
52
54
56
58
60
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 05, 2013-07-10
Drain Eff
ficiency (%)
Gain
70
18
Gain
70
PTVA035002EV
Typical Performance
(cont.)
V
D
= 50 V, 450 MHz, 12 µsec pulse width,
10% duty cycle, series show I
DQ
80
70
Pulsed CW Efficiency
I
DQ
=
0.02 A
0.5 A
Efficie
ency (%)
60
50
40
30
20
48
50
1.5 A
52
54
56
58
a035002 gr 6
60
Output Power (dBm)
Broadband Circuit Impedance
Frequency
MHz
390
405
420
435
450
R
1.28
1.35
1.43
1.54
1.67
Z Source
W
jX
–0.12
0.18
0.48
0.76
1.04
R
Z Load
W
jX
–2.22
–1.91
–1.62
–1.35
–1.11
1.80
1.86
1.92
1.98
2.02
Data Sheet
4 of 8
Rev. 05, 2013-07-10
PTVA035002EV
Reference Circuit, 390 – 450 MHz
TMM10, .050 (63)
R803
S3
R802
C803
C102
TMM10, .050 (63)
C105
R801
R807 R806
C802
V
DD
C205
V
DD
C801
R804
S1
S1
R107
3
+
S2
R805
C108
R101
R102
R104
R106
R105
R103
R109
R110
R112
R114
R113
R111
C103
S2
C206
C107
C208
C207
C204
PTVA035002EV
1
2
RF_IN
C201
C104
RF_OUT
4
5
C202
C203
C210 C212
C109
6
V
DD
R108
S1
C209
C211
C106
C101
PTVA035002_IN_03
PTVA035002_OUT_03
p t v a 0 3 5 0 0 2 e v _ C D _ 0 7 - 0 8 - 2 0 1 3
Reference circuit assembly diagram (not to scale)*
Find Gerber files for this test fixture on the Infineon Web site at
www.infineon.com/rfpower
Data Sheet
5 of 8
Rev. 05, 2013-07-10
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