......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DS20067K-page 2
1998-2012 Microchip Technology Inc.
93AA46/56/66
TABLE 1-1:
DC AND AC ELECTRICAL CHARACTERISTICS
Commercial (C): T
A
= 0°C to +70°C
Industrial (I):
T
A
= -40°C to +85°C
Symbol
V
IH
1
V
IH
2
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Operating current
V
IL
1
V
IL
2
V
OL
1
V
OL
2
V
OH
1
V
OH
2
I
LI
I
LO
C
IN
, C
OUT
I
CC
write
I
CC
read
Min
2.0
0.7 V
CC
-0.3
-0.3
—
—
2.4
V
CC
-0.2
-10
-10
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
70
Standby current
I
CCS
2
Clock frequency
Clock high time
Clock low time
Chip select setup time
Chip select hold time
Chip select low time
Data input setup time
Data input hold time
Data output delay time
Data output disable time
Status valid time
Program cycle time
V
CC
= +1.8V to +5.5V
Parameter
High-level input voltage
Max
V
CC
+1
V
CC
+1
0.8
0.2 V
CC
0.4
0.2
—
—
10
10
7
3
1
500
100
30
Units
V
V
V
V
V
V
V
V
A
A
pF
mA
mA
A
A
A
A
A
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
Conditions
V
CC
2.7V
V
CC
< 2.7V
V
CC
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA; V
CC
= 4.5V
I
OL
= 100A; V
CC
= 1.8V
I
OH
= -400
A;
V
CC
= 4.5V
I
OH
= -100
A;
V
CC
= 1.8V
V
IN
= 0.1V to V
CC
V
OUT
= 0.1V to V
CC
V
IN
/V
OUT
= 0V
(Note 1 & 2)
T
A
= +25°C, F
CLK
= 1 MHz
F
CLK
= 2 MHz; V
CC
=5.5V
(Note 2)
F
CLK
= 2 MHz; V
CC
= 5.5V
F
CLK
= 1 MHz; V
CC
= 3.0V
F
CLK
= 1 MHz; V
CC
= 1.8V
CLK = CS = 0V; V
CC
= 5.5V
CLK = CS = 0V; V
CC
= 3.0V
CLK = CS = 0V; V
CC
= 1.8V
ORG, DI = V
SS
or V
CC
V
CC
4.5V
V
CC
< 4.5V
F
CLK
T
CKH
T
CKL
T
CSS
T
CSH
T
CSL
T
DIS
T
DIH
T
PD
T
CZ
T
SV
T
WC
T
EC
T
WL
4
8
16
2
1
250
250
50
0
250
100
100
400
100
500
10
15
30
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
CL = 100 pF
CL = 100 pF
(Note 2)
CL = 100 pF
Erase/Write mode
ERAL mode (Vcc = 5V
10%)
WRAL mode (Vcc = 5V
10%)
25°C, Vcc = 5.0V, Block mode
(Note 3)
ns
ns
ns
ms
ms
ms
Endurance
Note 1:
2:
3:
—
1M
—
1M
—
This parameter is tested at T
A
= 25C and F
CLK
= 1 MHz.
This parameter is periodically sampled and not 100% tested.
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site.
1998-2012 Microchip Technology Inc.
DS20067K-page 3
93AA46/56/66
TABLE 1-2:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93AA46: ORG = 1 (X 16 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
A5 A4 A3 A2 A1 A0
1 1 X X X X
A5 A4 A3 A2 A1 A0
1 0 X X X X
A5 A4 A3 A2 A1 A0
0 1 X X X X
0 0 X X X X
Data In
—
—
—
—
D15 - D0
D15 - D0
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
25
9
9
9
25
25
9
TABLE 1-3:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93AA46: ORG = 0 (X 8 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X
A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X
A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X
0 0 X X X X X
Data In
—
—
—
—
D7 - D0
D7 - D0
—
Data Out
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
18
10
10
10
18
18
10
TABLE 1-4:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93AA56: ORG = 1 (X 16 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
X A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X
X A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X
X A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X
0 0 X X X X X X
Data In
—
—
—
—
D15 - D0
D15 - D0
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
27
11
11
11
27
27
11
TABLE 1-5:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93AA56: ORG = 0 (X 8 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
X A7 A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X X
X A7 A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X X
X A7 A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X X
0 0 X X X X X X X
Data In
—
—
—
—
D7 - D0
D7 - D0
—
Data Out
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
20
12
12
12
20
20
12
DS20067K-page 4
1998-2012 Microchip Technology Inc.
93AA46/56/66
TABLE 1-6:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93AA66: ORG = 1 (X 16 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
A7 A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X
A7 A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X
A7 A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X
0 0 X X X X X X
Data In
—
—
—
—
D15 - D0
D15 - D0
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
27
11
11
11
27
27
11
TABLE 1-7:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93AA66: ORG = 0 (X 8 ORGANIZATION)
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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