FeaTures
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LTC5599
30MHz to 1300MHz
Low Power
Direct Quadrature Modulator
DescripTion
The
LTC
®
5599
is a direct conversion I/Q modulator de-
signed for low power wireless applications that enable
direct modulation of differential baseband I and Q signals
on an RF carrier. Single side-band modulation or side-band
suppressed upconversion can be achieved by applying
90° phase-shifted signals to the I and Q inputs. The I/Q
baseband input ports can be either AC or DC coupled to a
source with a common mode voltage level of about 1.4V.
The SPI interface controls the supply current, modulator
gain, and allows optimization of the LO carrier feedthrough
and side-band suppression, with sine wave or square
wave LO drive. A fixed LC network on the LO and RF ports
covers a continuous 90MHz to 1300MHz operation. An
on-chip thermometer can be activated to compensate for
gain-temperature variations. More accurate temperature
measurements can be made using an on-chip diode. In
addition, a continuous analog gain control (V
CTRL
) pin
can be used for fast power control.
L,
LT, LTC, LTM, Linear Technology, and the Linear logo are registered trademarks and
QuikEval is a trademark of Linear Technology Corporation. All other trademarks are the property
of their respective owners.
n
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Frequency Range: 30MHz to 1300MHz
Low Power: 2.7V to 3.6V Supply; 28mA
Low LO Carrier Leakage: –51.5dBm at 500MHz
Side-Band Suppression: –52.6dBc at 500MHz
Output IP3: 20.8dBm at 500MHz
Low RF Output Noise Floor: –156dBm/Hz at 6MHz
Offset, P
RF
= 3dBm
Sine Wave or Square Wave LO Drive
SPI Control:
Adjustable Gain: –19dB to 0dB in 1dB Steps
Effecting Supply Current from 8mA to 35mA
I/Q Offset Adjust: –65dBm LO Carrier Leakage
I/Q Gain/Phase Adjust: –60dBc Side-Band Suppressed
24-Lead QFN 4mm × 4mm Package
applicaTions
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Wireless Microphones
Battery Powered Radios
Ad-Hoc Wireless Infrastructure Networks
“White-Space” Transmitters
Software Defined Radios (SDR)
Military Radios
Typical applicaTion
90MHz to 1300MHz Direct Conversion Transmitter Application
V
CTRL
1nF + 4.7µF
V
CC
SPI
LTC5599
3.3V
EVM and Noise Floor vs RF Output
Power and Digital Gain Setting
with 1Ms/s 16-QAM Signal
10
9
8
7
6
5
4
3
2
1
0
DG = –19
DG = –16
DG = –12
DG = –8
DG = –4
DG = 0
–105
–115
–125
–135
–145
–155
I-DAC
V
I
I-CHANNEL
10nF
PA
0°
EN
90°
Q-DAC
BASEBAND
GENERATOR
VCO/SYNTHESIZER
V
I
Q-CHANNEL
RMS EVM (%)
RF = 90MHz
to 1300MHz
THERMOMETER
TTCK
–15
–10
–5
0
RF OUTPUT POWER (dBm)
5
5599 TA01b
–165
39nH
15pF
5599 TA01a
5599f
For more information
www.linear.com/LTC5599
1
LTC5599
absoluTe MaxiMuM raTings
(Note 1)
pin conFiguraTion
TOP VIEW
SCLK
SDO
CSB
18 GNDRF
17 GNDRF
GND
25
16 RF
15 GNDRF
14 GNDRF
13 GNDRF
7
TEMP
8
BBPI
9 10 11 12
BBMI
BBPQ
BBMQ
GND
V
CC
SDI
EN
Supply Voltage .........................................................3.8V
Common Mode Level of BBPI, BBMI,
and BBPQ, BBMQ........................................................2V
LOL, LOC DC Voltage ............................................. ±0.1V
LOL, LOC Input Power (Note 15) ..........................20dBm
Current Sink of TEMP, SDO ....................................10mA
Voltage on Any Pin (Note 16) ...........–0.3V to V
CC
+ 0.3V
T
JMAX
.................................................................... 150°C
Case Operating Temperature Range........–40°C to 105°C
Storage Temperature Range .................. –65°C to 150°C
24 23 22 21 20 19
V
CTRL
1
GND 2
LOL 3
LOC 4
GND 5
TTCK 6
UF PACKAGE
24-LEAD (4mm
×
4mm) PLASTIC QFN
T
JMAX
= 150°C,
θ
JA
= 43°C/W,
θ
JC
= 4.5°C/W (AT EXPOSED PAD)
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
orDer inForMaTion
LEAD FREE FINISH
LTC5599IUF#PBF
TAPE AND REEL
LTC5599IUF#TRPBF
PART MARKING
5599
PACKAGE DESCRIPTION
24-Lead (4mm
×
4mm) Plastic QFN
CASE TEMPERATURE RANGE
–40°C to 105°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/
Please refer to:
http://www.linear.com/designtools/packaging/
for the most recent package drawings.
elecTrical characTerisTics
SYMBOL
S
22(ON)
f
LO(MATCH)
Gain
P
OUT
OP1dB
OIP2
OIP3
NFloor
SB
LOFT
2LOFT
PARAMETER
RF Port Return Loss
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
Output 1dB Compression
Output 2nd Order Intercept
Output 3rd Order Intercept
RF Output Noise Floor
Side-Band Suppression
Carrier Leakage (LO Feedthrough)
LO Feedthrough at 2xLO
(Note 5)
(Note 6)
S11 < –10dB
CONDITIONS
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
C
= 25°C. V
CC
= 3.3V, EN = 3.3V, V
CTRL
= 3.3V, P
LO
= 0dBm, BBPI, BBMI, BBPQ,
BBMQ common mode DC voltage V
CMBB
= 1.4V
DC
, I and Q baseband input signal = 2MHz, 2.1MHz, 1V
P-P(DIFF, I or Q)
, I and Q 90°
shifted, lower sideband selection, all registers set to default values, unless otherwise noted. Test circuit is shown in Figure 13.
MIN
TYP
–26
116 to 272
–7.5
–3.5
5
70.5
21.7
–155.3
–61.4
–52.8
–84.8
–59
20 •
Log (V
RF(OUT)(50Ω)
/V
IN(DIFF)(I or Q)
)
1V
P-P(DIFF)
CW Signal, I and Q
MAX
UNITS
dB
MHz
dB
dBm
dBm
dBm
dBm
dBm/Hz
dBc
dBm
dBm
dBm
5599f
f
LO
= 150MHz, f
RF1
= 147.9MHz, f
RF2
= 148MHz, Register 0x00 = 0x62
No Baseband AC Input Signal (Note 3)
(Note 7)
(Note 7)
EN = Low (Note 7)
2
For more information
www.linear.com/LTC5599
LTC5599
elecTrical characTerisTics
SYMBOL
2LO
3LOFT
3LO
BW1dB
BB
BW3dB
BB
S
22(ON)
f
LO(MATCH)
Gain
P
OUT
OP1dB
OIP2
OIP3
NFloor
SB
LOFT
2LOFT
2LO
3LOFT
3LO
BW1dB
BB
BW3dB
BB
S
22(ON)
f
LO(MATCH)
Gain
P
OUT
OP1dB
OIP2
OIP3
NFloor
SB
LOFT
2LOFT
2LO
PARAMETER
Signal Powers at 2xLO
LO Feedthrough at 3xLO
Signal Powers at 3xLO
–1dB Baseband Bandwidth
–3dB Baseband Bandwidth
RF Port Return Loss
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
Output 1dB Compression
Output 2nd Order Intercept
Output 3rd Order Intercept
RF Output Noise Floor
Side-Band Suppression
Carrier Leakage (LO Feedthrough)
LO Feedthrough at 2xLO
Signal Powers at 2xLO
LO Feedthrough at 3xLO
Signal Powers at 3xLO
–1dB Baseband Bandwidth
–3dB Baseband Bandwidth
RF Port Return Loss
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
Output 1dB Compression
Output 2nd Order Intercept
Output 3rd Order Intercept
RF Output Noise Floor
Side-Band Suppression
Carrier Leakage (LO Feedthrough)
LO Feedthrough at 2xLO
Signal Powers at 2xLO
Maximum of 2f
LO
– 2f
BB
; 2f
LO
– f
BB
; 2f
LO
+ f
BB
,
2f
LO
+ 2f
BB
(Note 5)
(Note 6)
No Baseband AC Input Signal (Note 3)
(Note 7)
(Note 7)
EN = Low (Note 7)
S11 < –10dB
20 •
Log (V
RF(OUT)(50Ω)
/V
IN(DIFF)(I or Q)
)
1V
P-P(DIFF)
CW Signal, I and Q
Maximum of 3f
LO
– f
BB
; 3f
LO
+ f
BB
R
SOURCE
= 50Ω, Differential
R
SOURCE
= 50Ω, Differential
Maximum of 2f
LO
– 2f
BB
; 2f
LO
– f
BB
; 2f
LO
+ f
BB
,
2f
LO
+ 2f
BB
(Note 5)
(Note 6)
No Baseband AC Input Signal (Note 3)
P
OUT
= 3dBm (Note 3)
(Note 7)
(Note 7)
EN = Low (Note 7)
S11 < –10dB
20 •
Log (V
RF(OUT)(50Ω)
/V
IN(DIFF)(I or Q)
)
1V
P-P(DIFF)
CW Signal, I and Q
Maximum of 3f
LO
– f
BB
; 3f
LO
+ f
BB
R
SOURCE
= 50Ω, Differential
R
SOURCE
= 50Ω, Differential
CONDITIONS
Maximum of 2f
LO
– 2f
BB
; 2f
LO
– f
BB
; 2f
LO
+ f
BB
,
2f
LO
+ 2f
BB
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
C
= 25°C. V
CC
= 3.3V, EN = 3.3V, V
CTRL
= 3.3V, P
LO
= 0dBm, BBPI, BBMI, BBPQ,
BBMQ common mode DC voltage V
CMBB
= 1.4V
DC
, I and Q baseband input signal = 2MHz, 2.1MHz, 1V
P-P(DIFF, I or Q)
, I and Q 90°
shifted, lower sideband selection, all registers set to default values, unless otherwise noted. Test circuit is shown in Figure 13.
MIN
TYP
–51
–57
–10.7
15
28
–26
180 to 1900
–7.7
–3.7
5.0
63.6
20.8
–156.7
–156.0
–52.6
–51.5
–67.5
–61
–51
–62
–11.8
29
57
–28
223 to 1902
–8.9
–4.9
4.1
63.5
18.4
–155.6
–61.3
–58.6
–62.3
–59
–51
MAX
UNITS
dBc
dBm
dBc
MHz
MHz
dB
MHz
dB
dBm
dBm
dBm
dBm
dBm/Hz
dBm/Hz
dBc
dBm
dBm
dBm
dBc
dBm
dBc
MHz
MHz
dB
MHz
dB
dBm
dBm
dBm
dBm
dBm/Hz
dBc
dBm
dBm
dBm
dBc
f
LO
= 500MHz, f
RF1
= 497.9MHz, f
RF2
= 498MHz, Register 0x00 = 0x2D
f
LO
= 900MHz, f
RF1
= 897.9MHz, f
RF2
= 898MHz, Register 0x00 = 0x12
5599f
For more information
www.linear.com/LTC5599
3
LTC5599
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
C
= 25°C. V
CC
= 3.3V, EN = 3.3V, V
CTRL
= 3.3V, P
LO
= 0dBm, BBPI, BBMI, BBPQ,
BBMQ common mode DC voltage V
CMBB
= 1.4V
DC
, I and Q baseband input signal = 2MHz, 2.1MHz, 1V
P-P(DIFF, I or Q)
, I and Q 90°
shifted, lower sideband selection, all registers set to default values, unless otherwise noted. Test circuit is shown in Figure 13.
SYMBOL
3LOFT
3LO
BW1dB
BB
BW3dB
BB
V
CTRL
R
t
CTRL
Z
CTRL
I
CTRL
PARAMETER
LO Feedthrough at 3xLO
Signal Powers at 3xLO
–1dB Baseband Bandwidth
–3dB Baseband Bandwidth
Gain Control Voltage Range
Gain Control Response Time
Gain Control Input Impedance
DC Input Current
Maximum of 3f
LO
– f
BB
; 3f
LO
+ f
BB
R
SOURCE
= 50Ω, Differential
R
SOURCE
= 50Ω, Differential
Set Bit 6 in Register 0x01
Set Bit 6 in Register 0x01 (Note 8)
Set Bit 6 in Register 0x01
Set Bit 6 in Register 0x01
Clear Bit 6 in Register 0x01
Internally Generated
Differential
Four Baseband Pins Shorted
Four Baseband Pins Shorted, EN = Low
No Hard Clipping, Single-Ended, Digital Gain
(DG) = –10
2.7
1.6
20
CONDITIONS
MIN
TYP
–60
–19.2
37
69
0.9 to 3.3
20
10
2.58
0
1.42
1.8
350
1.3
1.2
MAX
UNITS
dBm
dBc
MHz
MHz
V
ns
pF
mA
mA
V
kΩ
Ω
nA
V
P-P
elecTrical characTerisTics
Variable Gain Control (V
CTRL
)
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
V
CMBB
R
IN(DIFF)
R
IN(CM)
I
BB(OFF)
V
SWING
DC Common Mode Voltage
Input Resistance
Common Mode Input Resistance
Baseband Leakage Current
Amplitude Swing
Power Supply (V
CC
)
V
CC
V
RET(MIN)
I
CC(ON)
I
CC(RANGE)
I
CC(OFF)
t
ON
t
OFF
t
SB
t
LO
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
I
OH
V
HYS
t
CKH
Supply Voltage
Minimum Data Retention Voltage
Supply Current
Supply Current Range
Supply Current, Sleep Mode
Turn-On Time
Turn-Off Time
Side-Band Suppression Settling
LO Suppression Settling
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Output High Voltage
Output Low Voltage
SDO Leakage Current
Input Trip Point Hysteresis
SCLK High Time
l
(Note 14)
EN = High
EN = High, Register 0x01 from 0x00 to 0x13
EN = 0V
EN = Low to High (Notes 8, 12)
EN = High to Low (Notes 9, 12)
Register 0x00 Change, <–50dBc (Note 12)
Register 0x02 Change, <–60dBm (Note 12)
l
l
3.3
1.3
28
8 to 36
0.7
167
53
500
90
3.6
37
9
V
V
mA
mA
µA
ns
ns
ns
ns
V
Serial Port (CSB, SCLK, SDI, SDO), Enable (EN) and TTCK, SCLK = 20MHz
1.1
0.2
0.02
–0.4
(Note 13)
I
SINK
= 8mA (Note 10)
for SDO = High
22.5
l
l
V
nA
nA
V
V
CC_L
– 0.2
0.7
0.5
110
25
V
nA
mV
ns
5599f
4
For more information
www.linear.com/LTC5599
LTC5599
elecTrical characTerisTics
SYMBOL
t
CSS
t
CSH
t
CS
t
CH
t
DO
t
C%
f
CLK
V
TEMP
PARAMETER
CSB Setup Time
CSB High Time
SDI to SCLK Setup Time
SDI to SCLK Hold Time
SCLK to SDO Time
SCLK Duty Cycle
Maximum SCLK Frequency
Temperature Diode Voltage
Temperature Slope
I
TEMP
= 100µA
I
TEMP
= 100µA
CONDITIONS
l
l
l
l
l
l
l
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
C
= 25°C. V
CC
= 3.3V, EN = 3.3V, V
CTRL
= 3.3V, P
LO
= 0dBm, BBPI, BBMI, BBPQ,
BBMQ common mode DC voltage V
CMBB
= 1.4V
DC
, I and Q baseband input signal = 2MHz, 2.1MHz, 1V
P-P(DIFF, I or Q)
, I and Q 90°
shifted, lower sideband selection, all registers set to default values, unless otherwise noted. Test circuit is shown in Figure 13.
MIN
20
30
20
10
45
45
20
763
1.6
50
55
TYP
MAX
UNITS
ns
ns
ns
ns
ns
%
MHz
mV
mV/°C
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
The LTC5599 is guaranteed functional over the operating case
temperature range from –40°C to 105°C.
Note 3:
At 6MHz offset from the LO signal frequency. 100nF between BBPI
and BBMI, 100nF between BBPQ and BBMQ.
Note 4:
The Default Register Settings are listed in Table 1.
Note 5:
IM2 is measured at f
LO
– 4.1MHz.
Note 6:
IM3 is measured at f
LO
– 2.2MHz and f
LO
– 1.9MHz. OIP3 = lowest
of
(1.5 •
P{f
LO
– 2.1MHz}
– 0.5 •
P{f
LO
– 2.2MHz}) and
(1.5 •
P{f
LO
– 2MHz}
– 0.5 •
P{f
LO
– 1.9MHz}).
Note 7:
Without side-band or LO feedthrough nulling (unadjusted).
Note 8:
RF power is within 10% of final value.
Note 9:
RF power is at least 30dB down from its ON state.
Note 10:
V
OL
voltage scales linear with current sink. For example for
R
PULL-UP
= 1kΩ, V
CC_L
= 3.3V the SDO sink current is about (3.3 – 0.2)
/1kΩ = 3.1mA. Max V
OL
=
0.7 • 3.1/8 = 0.271V,
with R
PULL-UP
the SDO
pull-up resistor and V
CC_L
the digital supply voltage to which R
PULL-UP
is
connected to.
Note 11:
I and Q baseband Input signal = 2MHz CW, 0.8V
P-P, DIFF
each,
I and Q 0° shifted.
Note 12:
f
LO
= 500MHz, P
LO
= 0dBm, C4 = 1.5nF
Note 13:
Maximum V
OH
is derated for capacitive load using the following
formula: V
CC_L
•
exp
(–0.5 •
T
CLK
/(R
PULL-UP
•
C
LOAD
), with T
CLK
the
time of one SCLK cycle, R
PULL-UP
the SDO pull-up resistor, V
CC_L
the
digital supply voltage to which R
PULL-UP
is connected to, and C
LOAD
the
capacitive load at the SDO pin. For example for T
CLK
= 100ns (10MHz
SCLK), R
PULL-UP
= 1kΩ, C
LOAD
= 10pF and V
CC_L
= 3.3V the derating is 3.3
•
exp(–5) = 22.2mV, thus maximum V
OH
= 3.3V – 0.1 – 0.0222 = 3.177V.
Note 14:
Minimum V
CC
in order to retain register data content.
Note 15:
Guaranteed by design and characterization. This parameter is not
tested.
Note 16:
RF pin guaranteed by design while using a 10nF coupling
capacitor. The RF pin is not tested.
5599f
For more information
www.linear.com/LTC5599
5
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