电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SIT1602BI-81-28E-48.000000X

产品描述-40 TO 85C, 7050, 20PPM, 2.8V, 4
产品类别无源元件   
文件大小975KB,共17页
制造商SiTime
标准
下载文档 全文预览

SIT1602BI-81-28E-48.000000X概述

-40 TO 85C, 7050, 20PPM, 2.8V, 4

文档预览

下载PDF文档
SiT1602B
Low Power, Standard Frequency Oscillator
Features
Applications
52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to
SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
52 standard frequencies between
MHz
3.57 MHz and 77.76 MHz
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
45
90%
Frequency Stability
F_stab
Frequency Stability and Aging
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
+25
ppm
supply voltage and load.
+50
ppm
Operating Temperature Range
+70
°C
Extended Commercial
+85
°C
Industrial
Supply Voltage and Current Consumption
1.8
1.98
V
Contact
SiTime
for 1.5V support
2.5
2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
3.63
V
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
4.0
mA
Vdd = 1.8 V. OE = GND, Output in high-Z state
2.6
4.3
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
A
1.4
2.5
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
A
0.6
1.3
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
A
LVCMOS Output Characteristics
1
1.3
55
2
2.5
2
%
ns
ns
ns
Vdd
All Vdds. See Duty Cycle definition in
Figure 3
and
Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
Idd
OE Disable Current
Standby Current
I_OD
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output High Voltage
VOH
Output Low Voltage
VOL
10%
Vdd
Rev 1.04
January 30, 2018
www.sitime.com
非对称双核MCU基础知识及核间通信
本文从对比两颗分立MCU与单芯片双核MCU开始(以LPC4350为例),展开介绍了非对称双核MCU的基础知识与重要特点。接下来,重点介绍了核间通信的概念与几种实现方式,尤其是基于消息池的控制/状 ......
火辣西米秀 微控制器 MCU
电源芯片选择DC/DC还是LDO?
这个取决于你的应用场合。比如用在升压场合,当然只能用DC/DC,因为LDO是压降型,不能升压。另外看下各自的主要特点: DC/DC:效率高,噪声大; LDO:噪声低,静态电流小; 所以如果是用在 ......
fish001 模拟与混合信号
公交车IC卡电路图,原程序(其实就这么简单)
采用PHILIPS公司的mifare卡作为IC卡,设计以射频为中心,以单片机为控制中心的公交车收费系统,制作的IC卡可以实现制卡、售卡自动收费的功能。...
程序天使 单片机
几个重要的RedHat Linux内核文件介绍
在网络中,不少服务器采用的是Linux系统。为了进一步提高服务器的性能,可能需要根据特定的硬件及需求重新编译Linux内核。编译Linux内核,需要根据规定的步骤进行,编译内核过程中涉及到几个重 ......
1234 Linux开发
关于ST M4芯片,大家有啥最新消息没有?
对于ST M4的芯片,大家有啥最新消息没有? 目前可以申请样片了么?开发板可以购买了么?:) ...
john_wang stm32/stm8
ezusb到cyusb的移植
我的问题是从ezusb到cyusb的移植: 以前ezusb的接口函数,比如:IOCTL_EZUSB_VENDOR_OR_CLASS_REQUEST, 现在换到cysub都是 IOCTL_ADAPT_XXXXXXXX, 请问大家有没有一个对照表。比如以前的ez ......
ojo 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1263  2373  1295  669  90  6  9  36  50  47 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved