Doc No.
TT4-EA-13837
Revision.
3
Product Standards
MOS FET
FL5252050R
FL5252050R
Silicon P-channel MOSFET(FET)
Silicon epitaxial planar type(SBD)
2.9
Unit : mm
For switching
For DC-DC Converter
Features
Low drain-source ON resistance : RDS (on) typ. = 100 m ( VGS = -4.0 V )
Low drive voltage : 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol :
Y0
5
0.3
4
0.13
1
2
3
1.5
2.8
1.1
(0.95)(0.95)
1.9
Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
1. Gate
2 Source
3 Anode
4. Cathode
5 Drain
Absolute Maximum Ratings Ta = 25C
Symbol
項目
Drain to Source Voltage
Gate to Source Voltage
FET Drain current
Drain Current (Pulsed)
Channel temperature
Reverse voltage
SBD Forward current (Average)
Junction temperature
Total power dissipation *1
Overall
Operating ambient temperature
Storage temperature
Note:
Rating
-20
10
-2.1
-8
125
20
700
125
600
-40 to + 85
-55 to +125
Unit
V
V
A
A
C
V
mA
C
mW
C
C
VDS
VGS
ID
IDp
Tch
VR
IF(AV)
Tj
PD
Topr
Tstg
Panasonic
JEITA
Code
Mini5-G3-B
SC-74A
MO-178
Internal Connection
(D)
5
FET
SBD
(K)
4
*1 Measuring on ceramic substrate at 40 mm × 38 mm × 0.1 mm
PD absolute maximum rating without a heat shink: 300 mW
1
(G)
2
(S)
3
(A)
Pin Name
1. Gate
2. Source
3. Anode
4. Cathode
5. Drain
Page 1 of 6
Established : 2011-06-17
Revised
: 2013-10-28
Doc No.
TT4-EA-13837
Revision.
3
Product Standards
MOS FET
FL5252050R
Electrical Characteristics Ta = 25C
3C
FET (P-ch.)
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-State Resistance
Forward transfer admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on time
*1
Turn-off time
Note：
*1
Conditions
Min
-20
Typ Max
Unit
V
μA
μA
V
m
S
pF
pF
pF
ns
ns
ID = -1 mA, VGS = 0
VDS = -20 V, VGS = 0
VGS =
8
V, VDS = 0
ID = -1.0 mA, VDS = -10 V
RDS(on)1
ID = -1.0 A, VGS = -4.0 V
RDS(on)2
ID = -0.5 A, VGS = -2.5 V
|Yfs|
ID = -1.0 A, VDS = -10 V
Ciss
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
Crss
VDD = -10 V, VGS = 0 to -4 V
ton
ID = -1.0 A
VDD = -10 V, VGS = -4 to 0 V
toff
ID = -1.0 A
VDSS
IDSS
IGSS
Vth
-1.0
10
-0.4 -0.85 -1.3
100 130
130 200
3.0
400
40
35
35
100
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Turn-on, Turn-off measurement circuit
SBD
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Symbol
VF
IR
Ct
trr
Conditions
IF = 700 mA
VR = 20 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 10 mA
Min
Typ Max
0.45
200
12
4.3
Unit
V
μA
pF
ns
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes.
Page 2 of 6
Established : 2011-06-17
Revised
: 2013-10-28
Doc No.
TT4-EA-13837
Revision.
3
Product Standards
MOS FET
FL5252050R
*1
Turn-on, Turn-off
measurement circuit
VDD = -10 V
ID = -1 A
RL = 10 Ω
0V
-4 V
50 Ω
Page 3 of 6
Established : 2011-06-17
Revised
: 2013-10-28
Doc No.
TT4-EA-13837
Revision.
3
Product Standards
MOS FET
FL5252050R
Technical Data ( reference )
ID - VDS
-2
- 4.0 V
Drain current ID (A)
-1.5
- 2.5 V
- 2.0 V
VGS = - 1.5 V
-1
-0.08
-0.06
Ta = 85
℃
-0.04
25
℃
-0.02
- 40
℃
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-source voltage VDS (V)
-0.6
0
0
-0.25
-0.5
-0.75
-1
-1.25
-1.5
Gate-source voltage VGS (V)
-0.1
ID - VGS
Drain current ID (A)
-0.5
- 1.0 V
VDS - VGS
-1
1000
Drain-source On-state Resistance
RDS (on) (m)
RDS(on) - ID
Drain-source Voltage VDS (V)
-0.8
- 0.6 mA
-0.6
-0.4
-0.2
0
0
-1
-2
-3
-4
-5
- 1.0 mA
ID = - 2.0 mA
- 2.5 V
100
VGS = - 4.0 V
10
-0.01
-0.1
-1
-10
Gate-source Voltage VGS (V)
Drain Current ID (A)
Capacitance - VDS
1000
Capacitance C (pF)
Ciss
100
Coss
Crss
10
-0.1
-1
-10
-100
Drain-source Voltage VDS (V)
Page 4 of 6
Established : 2011-06-17
Revised
: 2013-10-28
Doc No.
TT4-EA-13837
Revision.
3
Product Standards
MOS FET
FL5252050R
Technical Data ( reference )
Vth - Ta
-1
Gate-source Threshold Voltage
Vth (V)
Drain-source On-resistance
RDS(on) (mΩ)
RDS(on) - Ta
150
125
100
75
50
25
0
-50
0
50
Temperature (℃)
-4.0 V
VGS = -2.5 V
-0.75
-0.5
-0.25
0
-50
0
50
Temperature (℃)
100
150
100
150
PD - Ta
1
Total Power Dissipation PD (W)
Measuring on ceramic substrate at
40 mm
38 mm
0.1 mm.
0.5
Non-heat shink
0
0
50
100
150
Temperature Ta (℃)
Rth - tsw
1000
Thermal Resistance Rth (C/W)
-100
Safe Operating Area
IDp= - 8.0 A
Drain Current ID (A)
100
-10
-1
-0.1
-0.01
1 ms
10 ms
100 ms
1s
DC
10
1
Operation in this area
is limited by RDS(on)
Ta = 25
C,
Glass epoxy board (25.4
25.4
t0.8 mm)
coated with copper foil,
which has more than 300 mm
2
.
0.1
0.01
0.1
1
10
100
1000
-0.001
-0.01
Pulse Width tsw (s)
-0.1
-1
-10
Drain-source Voltage VDS (V)
-100
Page 5 of 6
Established : 2011-06-17
Revised
: 2013-10-28
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