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RN1105MFV,L3F

产品描述TRANS PREBIAS NPN 0.15W VESM
产品类别半导体    分立半导体   
文件大小1MB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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RN1105MFV,L3F概述

TRANS PREBIAS NPN 0.15W VESM

RN1105MFV,L3F规格参数

参数名称属性值
晶体管类型NPN - 预偏压
电流 - 集电极(Ic)(最大值)100mA
电压 - 集射极击穿(最大值)50V
电阻器 - 基底(R1)2.2 kOhms
电阻器 - 发射极基底(R2)47 kOhms
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)80 @ 10mA,5V
不同 Ib,Ic 时的 Vce 饱和值(最大值)300mV @ 500µA,5mA
电流 - 集电极截止(最大值)500nA
功率 - 最大值150mW
安装类型表面贴装
封装/外壳SOT-723
供应商器件封装VESM

文档预览

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RN1101MFV∼RN1106MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV, RN1102MFV, RN1103MFV
RN1104MFV, RN1105MFV, RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
0.22 ± 0.05
Unit: mm
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
1.2 ± 0.05
0.4
Complementary to the RN2101MFV to RN2106MFV
0.4
A wide range of resistor values is available for use in various circuits.
0.8 ± 0.05
1
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
0.5 ± 0.05
Type No.
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1. BASE
VESM
JEDEC
JEITA
TOSHIBA
2. EMITTER
3. COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101MFV to 1106MFV
RN1101MFV to 1106MFV
RN1101MFV to 1104MFV
RN1105MFV, 1106MFV
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
5
100
150
150
−55
to 150
Weight: 1.5 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Pad Dimension(Reference)
1.15
0.5
Unit: mm
0.45
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2014-03-01

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