VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 40 A, 70 A, 85 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Stud cathode and stud anode versions
• Types up to 100 V
RRM
DO-5 (DO-203AB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit Configuration
40 A, 70 A, 85 A
DO-5 (DO-203AB)
Single
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
I
2
t
V
RRM
t
rr
T
J
Range
Range
TEST CONDITIONS
T
C
maximum
50 Hz
60 Hz
50 Hz
60 Hz
40HFL
40
85
400
420
800
730
11 300
100 to 1000
See Recovery
Characteristics table
-40 to +125
70HFL
70
85
700
730
2450
2240
34 650
100 to 1000
See Recovery
Characteristics table
-40 to +125
85HFL
85
85
1100
1151
6050
5523
85 560
100 to 1000
See Recovery
Characteristics table
-40 to +125
UNITS
A
°C
A
A
2
s
I
2
s
V
ns
°C
Revision: 11-Jan-18
Document Number: 93150
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
(1)
V
RRM
, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
T
J
= - 40 °C TO 125 °C
V
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
V
RSM
, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
T
J
= 25 °C TO 125 °C
V
150
300
500
700
900
1100
150
300
500
700
900
1100
150
300
500
700
900
1100
0.1
20
0.1
15
0.1
10
I
FM
, MAXIMUM PEAK REVERSE
CURRENT AT RATED V
RRM
mA
T
J
= 25 °C
T
J
= 125 °C
Vishay Semiconductors
VS-40HFL10S02, VS-40HFL10S05
VS-40HFL20S02, VS-40HFL20S05
VS-40HFL40S02, VS-40HFL40S05
VS-40HFL60S02, VS-40HFL60S05
VS-40HFL80S05
VS-40HFL100S05
VS-70HFL10S02, VS-70HFL10S05
VS-70HFL20S02, VS-70HFL20S05
VS-70HFL40S02, VS-70HFL40S05
VS-70HFL60S02, VS-70HFL60S05
VS-70HFL80S05
VS-70HFL100S05
VS-85HFL10S02, VS-85HFL10S05
VS-85HFL20S02, VS-85HFL20S05
VS-85HFL40S02, VS-85HFL40S05
VS-85HFL60S02, VS-85HFL60S05
VS-85HFL80S05
VS-85HFL100S05
Note
(1)
Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
SYMBOL
I
F(AV)
I
F(RMS)
I
FRM
Sinusoidal half wave, 30° conduction
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
t = 8.3 ms
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
(1)
TEST CONDITIONS
180° conduction, half sine wave
40HFL
40
63
220
400
420
475
500
800
730
1130
1030
11 300
1.081
6.33
1.95
70HFL
70
75
110
380
700
730
830
870
2450
2240
3460
3160
34 650
1.085
3.40
1.85
85HFL
85
134
470
1100
1151
1308
1369
6050
5523
8556
7810
85 560
1.128
2.11
1.75
UNITS
A
°C
A
A
Sinusoidal half wave, 100
% V
RRM
reapplied,
initial T
J
= T
J
maximum
Sinusoidal half wave,
no voltage reapplied,
initial T
J
= T
J
maximum
100 % V
RRM
reapplied,
initial T
J
= T
J
maximum
No voltage reapplied,
initial T
J
= T
J
maximum
A
A
2
s
I
2
t
V
F(TO)
r
F
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= 125 °C
T
J
= 25 °C, I
FM
=
x I
F(AV)
A
2
s
V
m
V
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
Note
(1)
I
2
t for time t = I
2
t
x
t
x
x
Revision: 11-Jan-18
Document Number: 93150
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
40HFL...
S02
70
200
160
240
S05
180
500
750
1300
70HFL...
S02
60
200
90
240
S05
150
500
500
1300
85HFL...
S02
50
200
70
240
S05
120
ns
500
340
nC
1300
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25 °C, I
F
= 1 A to V
R
= 30 V,
dI
F
/dt = 100 A/μs
T
J
= 25 °C, - dI
F
/dt = 25 A/μs,
I
FM
=
x rated I
F(AV)
T
J
= 25 °C, I
F
= 1 A to V
R
= 30 V,
dI
F
/dt = 100 A/μs
T
J
= 25 °C, - dI
F
/dt = 25 A/μs,
I
FM
=
x rated I
F(AV)
UNITS
Typical reverse recovery time
t
rr
Typical reverse recovered charge
Q
rr
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowable mounting torque
(+ 0 %, - 10 %)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth,
flat and greased
Not lubricated thread, tighting on nut
(1)
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
(2)
Approximate weight
Case style
Notes
(1)
Recommended for pass-through holes
(2)
Recommended for holed threaded heatsinks
JEDEC
®
(2)
TEST CONDITIONS
40HFL
70HFL
-40 to 125
-40 to 150
85HFL
UNITS
°C
0.60
0.36
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
25
0.88
0.30
K/W
N·m
(lbf · in)
DO-5 (DO-203AB)
I
F
dI
F
I
FM
t
t
rr
t
V
R
I
RRM (REC)
Q
rr
dt
I
RRM (REC)
I
F
, I
FM
- Peak forward current prior to commulation
-dI
F
/dt - Rate of fail forward current
I
RRM
(REC) - Peak reverse recovery current
t
rr
- Reverse recovery time
Q
rr
- Reverse recovered charge
Fig. 1 - Reverse Recovery Time Test Waveform
Revision: 11-Jan-18
Document Number: 93150
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
T
J
= 125 °C
1.0
1.5
Maximum Average Forward Power Loss (W)
70
40HFL...
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
10
20
Ø
Conduction Angle
Ø = 180 °
120 °
90 °
60 °
30 °
RMS limit
-
Δ
R
0.
7
-
Δ
R
0.
5
R
th
S
A
-
Δ
R
=
3
0.
-
Δ
R
2.0
-
Δ
R
R
-
Δ
W
K/
3-
Δ
R
4-
Δ
R
5 -
Δ
R
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series
Maximum Average Forward Power Loss (W)
100
90
80
70
60
50
40
30
20
Ø
40HFL...
T
J
= 25 °C
0.5
0.7 -
Δ
R
-
Δ
R
1.0
-
Δ
R
1.5
-
Δ
R
2.0-
Δ
R
3 -
Δ
R
4 -
Δ
R
Ø = DC
180°
120°
60°
RMS limit
R
th
S
A
=
0.3
-
Δ
R
K/
W
10
0
0
10
20
30
40
Conduction Angle
50
60
70
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series
Maximum Average Forward Power Loss (W)
120
70HFL...
100
80
60
40
20
Ø = 180°
120°
T
J
= 125 °C
90°
60°
30°
0.5
-
Δ
R
0.7
1.0
R
-
Δ
R
-
Δ
R
th
S
A
=
0.
3
-
Δ
R
RMS limit
1.5
-
Δ
R
2.0 -
Δ
R
3 -
Δ
R
Ø
K/
W
4 -
Δ
R
Conduction Angle
0
0
10
20
30
40
50
60
70
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series
Revision: 11-Jan-18
Document Number: 93150
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
30
70HFL... T
J
= 150 °C
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
RMS limit
Ø = 180°
120°
60°
30°
R
th
S
A
=2
DC
Δ
R
6-
Δ
5 -
Δ
R
R
8-
Δ
R
10 -
Δ
R
15-
Δ
R
Ø
4-
3-
.0
1.
0
Δ
R
-
Δ
R
-
-
Δ
Δ
R
R
W
0.
5
K/
20 -
Δ
R
Conduction Angle
no heatsink
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 70HFL Series
Maximum Average Forward Power Loss (W)
25
85HFL... T
J
= 150 °C
20
Ø = 180°
120°
60°
30°
RMS limit
10
5
-
-
Δ
Δ
R
=3
R
.0
-
Δ
4-
R
Δ
R
5-
K/
Δ
R
W
6-
Δ
R
8-
Δ
R
10 -
Δ
R
R
th
S
2.
A
0
1.
1.
0
R
-
Δ
15
15 -
Δ
R
5
Ø
20 -
Δ
R
Conduction Angle
0
0
2
4
6
8
10
12
14
16
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 85HFL Series
Maximum Average Forward Power Loss (W)
35
30
25
20
15
10
5
0
0
5
10
15
20
25
10
20
30
40
50
60
70
80
90 100
85HFL...
T
J
= 150 °C
Ø = 180°
120°
60°
30°
RMS limit
DC
Ø
0.
1.
1.
5
0
-
Δ
-
Δ
-
Δ
5-
Δ
A
=
R
R
R
R
3.0
-
Δ
RK
4-
/W
Δ
R
5-
Δ
R
6-
Δ
R
8-
Δ
R
R
th
S
2.0
10 -
Δ
R
15 -
Δ
R
Conduction Angle
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 85HFL Series
Revision: 11-Jan-18
Document Number: 93150
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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