DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D183
BYX120G
High-voltage soft-recovery
controlled avalanche rectifier
Product specification
Supersedes data of May 1996
1996 Sep 26
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability.
APPLICATIONS
•
Car ignition systems
•
Automotive applications with
extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
BYX120G
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
handbook, halfpage
k
a
MSB026
The cathode is marked by an orange band on the body.
Fig.1 Simplified outline (SOD88A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
RWM
I
F(AV)
I
FRM
I
FSM
P
RSM
T
stg
T
j
PARAMETER
repetitive peak reverse voltage
crest working reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward current
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
continuous
maximum 30 mins
t = 10 ms half sinewave; T
j
= T
j max
prior to surge; V
R
= V
RWMmax
t = 10
µs;
triangular pulse;
T
j
= T
j max
prior to surge
CONDITIONS
MIN.
−
−
−
−
−
−
−65
−65
−65
TYP.
3
3
100
5
15
3
+200
+180
+200
MAX.
kV
kV
mA
A
A
kW
°C
°C
°C
1996 Sep 26
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
reverse current
I
R
= 0.1 mA
V
R
= V
RWMmax
; T
j
= 180
°C
CONDITIONS
I
F
= 250 mA
MIN.
−
3.5
−
TYP.
−
−
−
BYX120G
MAX.
5
−
75
V
UNIT
kV
µA
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
T
amb
= T
leads
VALUE
55
UNIT
K/W
1996 Sep 26
3
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
PACKAGE OUTLINE
handbook, full pagewidth
3.8
max
30.5 min
Dimensions in mm.
The marking band indicates the cathode.
BYX120G
0.81
max
8 max
30.5 min
MSA215 - 3
Fig.2 SOD88A.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Sep 26
4
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