电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TZM5226C-GS08

产品描述DIODE ZENER 3.3V 500MW SOD80
产品类别分立半导体    二极管   
文件大小91KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

TZM5226C-GS08概述

DIODE ZENER 3.3V 500MW SOD80

TZM5226C-GS08规格参数

参数名称属性值
厂商名称Vishay(威世)
零件包装代码DO-213AA
包装说明O-LELF-R2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度175 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压3.3 V
表面贴装YES
技术ZENER
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
最大电压容差2%
工作测试电流20 mA

文档预览

下载PDF文档
TZM5221 to TZM5267
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Very high stability
• Electrical data identical with the devices
1N5221B to 1N5267B
• Low reverse current level
• Standard Zener voltage tolerance ± 5 % with a
“B” suffix in the ordering code (e.g.: TZM5221B),
suffix “C” is ± 2 % tolerance
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
UNIT
V
mA
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Circuit configuration
VALUE
2.4 to 75
1.7 to 20
Thermal equilibrium
Single
ORDERING INFORMATION
DEVICE NAME
TZM5221B to TZM5267B
TZM5221C to TZM5267C
TZM5221B to TZM5267B
TZM5221C to TZM5267C
ORDERING CODE
TZM5221B to TZM5267B-series-GS18
10 000 (8 mm tape on 13" reel)
TZM5221C to TZM5267C-series-GS18
TZM5221B to TZM5267B-series-GS08
2500 (8 mm tape on 7" reel)
TZM5221C to TZM5267C-series-GS08
12 500/box
10 000/box
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
MiniMELF SOD-80
WEIGHT
31 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
On PC board 50 mm x 50 mm x 1.6 mm
TEST CONDITION
R
thJA
= < 300 K/W
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
500
175
-65 to +175
1.1
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.9, 20-Feb-18
Document Number: 85609
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1090  133  1906  2264  74  22  3  39  46  2 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved